To solve partial differential equations numerically, they are usually
discretized. For that reason, the domain
where the equations are
posed has to be partitioned into a finite number of sub-domains
, which are usually obtained by a VORONOI
tessellation [238,239]. In order to obtain the solution
with a desired accuracy, the equation system is approximated in each of these
sub-domains by algebraic equations. The unknowns of this system are
approximations of the continuous solutions at the discrete grid points in the
domain [226]. Several approaches for the discretization of
the partial differential equations have been proposed. It has been found to be
advantageous to apply the finite boxes discretization scheme for semiconductor
device simulation [226]. This method considers the integral form
of the equation for each sub-domain, which is the so-called control volume
associated with the grid point
.
By applying the GAUSS integral theorem, the POISSON equation (4.1)
is integrated as
(4.3)
Finally, the discretized equation for point with neighbor points
can be written implicitly as
(4.4)
with is the distance between grid point
and
, as the interface area between the domains
and
, and as the volume of the domain
. For position-dependent
, one can use here some
average, e.g.
.
Equation (4.4) can be generally written as
(4.5)
where runs over all neighboring grid points in the same segment,
is the flux between points and , and is the
source term (see Fig. 4.2).
Grid points on the boundary
are defined as having
neighbor grid points in other segments. Thus, for boundary elements
(4.5) does not represent the complete control function ,
since all fluxes into the contact or the other segment are
missing. For that reason, the information for these boxes has to be completed
by taking the boundary conditions into account.