Symbol | Unit | Description | ||
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eV | Electron affinity of a CNT | ||
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eV | Work function of a CNT | ||
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eV | Work function of the metal | ||
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eV | Energy barrier height for electrons | ||
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eV | Energy barrier height for holes | ||
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V | Electrostatic potential | ||
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eV | Phonon energy | ||
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eV![]() |
Electron-optical-phonon coupling coefficient | ||
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eV![]() |
Electron-acoustic-phonon coupling coefficient | ||
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eV | Energy | ||
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eV | FERMI energy | ||
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eV | Conduction band edge energy | ||
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eV | Valence band edge energy | ||
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eV | Band gap energy | ||
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eV | Intrinsic energy | ||
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m![]() ![]() |
Density of states | ||
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A | Current | ||
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m![]() |
Wave number | ||
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m![]() |
Wave number vector | ||
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AsV![]() ![]() |
Dielectric permittivity | ||
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m | Gate-source spacer length | ||
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m | Drain-source space length | ||
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kg | Mass | ||
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eV/Å | Reduced matrix elements of electron-optical-phonon interaction | ||
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eV | Reduced matrix elements of electron-acoustic-phonon interaction | ||
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1 | Bose-EINSTEIN distribution function | ||
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1 | FERMI-DIRAC distribution function | ||
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m![]() |
Electron concentration | ||
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m![]() |
Hole concentration | ||
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m![]() |
Concentration of donors | ||
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m![]() |
Concentration of acceptors | ||
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m | Space vector | ||
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m![]() |
Carrier concentration | ||
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s | Time | ||
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K | Temperature | ||
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eV | Potential energy | ||
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V | Gate-source voltage | ||
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V | Drain-source voltage |
M. Pourfath: Numerical Study of Quantum Transport in Carbon Nanotube-Based Transistors