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The fabrication process can roughly be classified into two major groups of
processes: (1) structural processing (etching, deposition, mask
development), where the characteristics of the applied semiconductor
materials are changed, and (2) thermal processing and doping
(annealing, implantation), where the impurity profiles are manipulated.
There are some processes which cannot be clearly classified, for example
molecular beam epitaxy, which is used as deposition method to fabricate thin
layers. By adding impurity particles to the beam doping of the layers can be
achieved. Also the oxidation process effects the doping and the structure of
the device. The following section gives a brief outlook on the
state-of-the-art simulation methods used for the most critical process steps
in a more or less hierarchical order.
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