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5.2 Benchmarks

For checking the accuracy and stability of the resist development simulation, benchmark examples as proposed in [24] have been simulated. For these examples the local development rate $r$ of the cells is given as mathematical expression of their position $r=F(x,y,z)$. The expressions are subdivided into several equations which describe the impact of different components of the electro-magnetic field. The final rate is given by the superposition of the interfering contributions.


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W. Pyka: Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing