Prev: Acknowledgment

Contents

• Abstract
• Kurzfassung
• Acknowledgment
• Contents
• List of Figures
• List of Tables
• List of Symbols
• List of Abbreviations
• 1. Introduction
  • 1.1 Process Technology
  • 1.2 Technology Computer-Aided Design
  • 1.3 Topography Simulation
    • 1.3.1 Motivation
    • 1.3.2 Equipment Simulation
  • 1.4 Outline of the Thesis
• 2. The Cellular Approach
  • 2.1 Existing Topography Simulators
  • 2.2 The Structuring Element Algorithm
  • 2.3 Optimizations for the Cellular Approach
    • 2.3.1 Spherical Segment Elements
    • 2.3.2 Line Elements
    • 2.3.3 Benchmark Example and Run Time Considerations
• 3. Solid Modeling and Basic Topography Models
  • 3.1 Solid Modeling
    • 3.1.1 Defining a Simulation Domain
    • 3.1.2 Masks
    • 3.1.3 Filling
    • 3.1.4 Chemical Mechanical Planarization
    • 3.1.5 Stripping
    • 3.1.6 Oxidation
  • 3.2 Basic Etching and Deposition Processes
    • 3.2.1 Isotropic Etching and Deposition
    • 3.2.2 Anisotropic Etching and Deposition
    • 3.2.3 Unidirectional Etching and Deposition
• 4. Inclusion of Layout and Lithography Simulation
  • 4.1 Usage of Layout Data
    • 4.1.1 Examples
      • 4.1.1.1 DRAM Cell
      • 4.1.1.2 Two Metal Layer Interconnect Structure
  • 4.2 Inclusion of Lithography Simulation
    • 4.2.1 Interconnect Example
• 5. Resist Development
  • 5.1 Modeling of Resist Development
  • 5.2 Benchmarks
    • 5.2.1 Multiple Gaussian Peaks
    • 5.2.2 Reflective Notching
    • 5.2.3 Phase Shifted Outriggers
  • 5.3 Coupling with Lithography
    • 5.3.1 Lithography Modeling
    • 5.3.2 Contact Hole Printing
• 6. Low-Pressure Etching and Deposition Processes
  • 6.1 Modeling of Low-Pressure Processes
    • 6.1.1 Transport Kinetics
    • 6.1.2 Distribution Functions
    • 6.1.3 Reactor Geometry and Positioning of the Structures
      • 6.1.3.1 Adaption of Analytical Distribution Functions
      • 6.1.3.2 Inclusion of Monte Carlo Simulations
    • 6.1.4 Rate Calculation
    • 6.1.5 Surface Propagation
  • 6.2 Low-Pressure Processes
    • 6.2.1 Reactive Ion Etching
    • 6.2.2 Plasma Deposition
    • 6.2.3 Sputter Deposition
  • 6.3 Performance
• 7. High-Pressure Chemical Vapor Deposition
  • 7.1 Simulation Model
    • 7.1.1 Surface Extraction
    • 7.1.2 Meshing
    • 7.1.3 Diffusion and Reaction Model
    • 7.1.4 Surface Propagation
    • 7.1.5 Time-Step Control
    • 7.1.6 Process Control
  • 7.2 HPCVD of Tungsten
  • 7.3 Application Examples
    • 7.3.1 Plug-Fill Process
    • 7.3.2 L-Shaped Trench
  • 7.4 Reactor/Feature Scale Integration
• 8. Conclusion and Outlook
• Bibliography
• List of Publications
• Curriculum Vitae

Prev: Acknowledgment