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6.1.3.2 Inclusion of Monte Carlo Simulations

Beside analytical functions used for the approximation of particle distributions impinging on the wafer, it is also possible to include flux distributions resulting from three-dimensional Monte Carlo particle transport simulation as described in [69]. These simulations account for experimentally measured target erosion profiles and calculate particle collisions according the the prevailing process pressure and temperature.

Figure 6.6: Polar plot of particle distributions resulting from Monte Carlo particle transport simulation. The left hand side shows a distribution with an average incidence direction of $\vartheta_{\mathrm{src}}$ = $1.01^\circ$ for a center wafer position, for the off-center position on the right hand side $\vartheta_{\mathrm{src}}$ = $5.12^\circ$.
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...[width=0.49\textwidth]{eps-pvd/tin1_7,2.angmap_3d.eps}}
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Fig. 6.6 shows two polar plots of particle distributions resulting from fully three-dimensional Monte Carlo particle transport simulations. The left hand side depicts a distribution with an average incidence direction of $\vartheta_{\mathrm{src}}$ = 1.01$^\circ$ for a center wafer position, for the off-center position on the right hand side $\vartheta_{\mathrm{src}}$ = 5.12$^\circ$. This means that the average direction of the particles is slightly shifted from the vertical direction indicated in the plot by the sold line.

This concludes the considerations about the particle distributions. The next step towards the final profile evolution is the deduction of the local surface velocities from the particle distributions.

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W. Pyka: Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing