previous up next contents
Prev: 6.1.2 Distribution Functions Up: 6.1 Modeling of Low-Pressure Next: 6.1.3.1 Adaption of Analytical


6.1.3 Reactor Geometry and Positioning of the Structures

For the latest technologies in 300mm wafer manufacturing the above mentioned across-wafer non-uniformities in the overall film thickness and the variations in the flux distributions become decisive for the yield and the compliance with the device specifications. It is clear that feature scale topography simulation has to include the geometric arrangement on reactor scale in order to be predictive for the across-wafer uniformity.

In the following two ways for the inclusion of the reactor scale variations into the feature scale profile evolution will be shown. The first one adapts the analytical distribution functions according to the position on the wafer, the second one incorporates the results of Monte Carlo simulations of particle transport on reactor scale as discretized distribution functions.



Subsections previous up next contents
Prev: 6.1.2 Distribution Functions Up: 6.1 Modeling of Low-Pressure Next: 6.1.3.1 Adaption of Analytical

W. Pyka: Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing