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6.1.3 Reactor Geometry and Positioning of the Structures
For the latest technologies in 300mm wafer manufacturing the above mentioned
across-wafer non-uniformities in the overall film thickness and the variations
in the flux distributions become decisive for the yield and the compliance with
the device specifications. It is clear that feature scale topography simulation
has to include the geometric arrangement on reactor scale in order to be
predictive for the across-wafer uniformity.
In the following two ways for the inclusion of the reactor scale variations
into the feature scale profile evolution will be shown. The first one adapts
the analytical distribution functions according to the position on the wafer,
the second one incorporates the results of Monte Carlo simulations of particle
transport on reactor scale as discretized distribution functions.
Subsections
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W. Pyka: Feature Scale Modeling for Etching and
Deposition Processes in Semiconductor Manufacturing