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7.3 Application Examples

In this section results for the HPCVD of tungsten formed by the reduction of ${\rm WF\hspace*{-0.2ex}_6}$ with ${\rm H_2}$are shown. In Section 7.3.1 this process is applied as final step in a ${\rm Ti}$/${\rm TiN}$/${\rm W}$ via plug-fill process. In this case three-dimensional simulation is necessary for the investigation of the strongly asymmetric film profiles varying with the wafer position. Finally Section 7.3.2 demonstrates the transition from diffusion to reaction limited process conditions for an L-shaped trench. Due to the geometry of the trench this process also requires three-dimensional simulation.


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W. Pyka: Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing