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3.1.4 Chemical Mechanical Planarization
Before stripping the first material, this is the right time for a short
intermission in order to present an idealized CMP model. It works in a
simplified way that any material above a specified vertical level will be
removed, regardless of applied force, pressure redistribution, chemical surface
interactions, dissolution velocities, pressure enhanced dissolution, mechanical
properties and thickness of the pad, pattern densities, and variations in
pattern heights. Just look at the marvelous result in Fig. 3.5.
Figure 3.5:
Emulation of chemical mechanical planarization.
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W. Pyka: Feature Scale Modeling for Etching and
Deposition Processes in Semiconductor Manufacturing