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List of Figures
2.1.
Material representation and structuring element
2.2.
Structuring elements for different etching and deposition processes
2.3.
Reduction of spheres to spherical segments
2.4.
Redundant operations at curved surfaces
2.5.
Surface normal calculation
2.6.
Isotropic deposition of aluminium
3.1.
Definition of a simulation domain
3.2.
Circular pattern on the wafer
3.3.
Combined geometric primitives
3.4.
Filling operation
3.5.
Emulation of chemical mechanical planarization
3.6.
Stripping of material
3.7.
Bipolar transistor
3.8.
Structuring element for isotropic etching
3.9.
Structuring element for isotropic deposition
3.10.
Structuring element for anisotropic etching
3.11.
Structuring element for anisotropic deposition
3.12.
Structuring element for unidirectional etching
3.13.
Structuring element for unidirectional deposition
4.1.
Layout of a DRAM cell
4.2.
DRAM cell
4.3.
Layout of a two metal layer interconnect structure
4.4.
Two metal layer interconnect structure
4.5.
Two metal layer interconnect structure (continued)
4.6.
Three-dimensional model of an interconnect structure
4.7.
Isolated line of the interconnect structure from Fig.
4.6
5.1.
Model for resist development
5.2.
Multiple Gaussian peaks benchmark example
5.3.
Reflective notching benchmark example
5.4.
Phase shifted outriggers benchmark example
5.5.
Simulation flow of the exposure/bleaching module
5.6.
Exposure and development simulation
6.1.
Transport characteristics for low and high-pressure processes
6.2.
Relation between emission characteristics and incident particle distributions
6.3.
Angular particle distributions for 0.5, 1.5, and 4.5mTorr
6.4.
Reactor geometry and location of single devices
6.5.
Distribution functions for center and off-center positions
6.6.
Particle distributions resulting from Monte Carlo simulations
6.7.
Visibility limits for circular via and step
6.8.
Different types of reflection
6.9.
Sputter yield function
6.10.
Angular dependent surface interaction probabilities for Al atoms
6.11.
Rate vectors for sputter deposition
6.12.
Deposition of TiN
6.13.
Reactive ion etching of two trenches
6.14.
Plasma deposition over two metal lines
6.15.
Particle distribution functions for different sets of parameters
6.16.
Deposition of TiN into circular vias
6.17.
Positions of the two damascene structures
6.18.
Damascene structure with perpendicular and parallel particle incidence
7.1.
Flowchart for the CVD model
7.2.
Surface extraction from the cellular material representation
7.3.
Propagation of the advancing front
7.4.
Cross-section through a three-dimensional mesh
7.5.
Flow diagram of the single modules of the CVD model
7.6.
Tungsten deposition in a rectangular via
7.7.
Different process conditions for CVD of tungsten
7.8.
CVD reactor scale simulation
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W. Pyka: Feature Scale Modeling for Etching and Deposition Processes in Semiconductor Manufacturing
