7.3 Technology B: Pseudomorphic HEMT on GaAs in Ka-Band and Q-Band

For high-power amplifiers in the Ka-band (26.5-40 GHz) and Q-band (33-50 GHz) the AlGaAs/ InGaAs/GaAs HEMT is the most promising device with respect to high gain and output power. A careful optimization process is necessary with respect to both, gain and power requirements considering statistical process variations. Fig 7.20 shows the simulated and measured output characteristics of a ${\it l}_{\mathrm{g}}$= 210 nm pseudomorphic HEMT.

Figure 7.20: Output characteristics of pseudomorphic power HEMT.