4.3 Application Example

The procedure described in the previous section yields the following values from the extraction program PARAS developed for HEMTs (Table 4.2):

Table 4.2: Intrinsic RF-simulation results supplied by PARAS for a pseudomorphic HEMT.

${\mit g}_{\mathrm{m}}$	${\it C}_{\mathrm{gs}}$	${\it C}_{\mathrm{gd}}$	${\it C}_{\mathrm{ds}}$	${\it g}_{\mathrm{ds}}$	${\it R}_{\mathrm{gs}}$	${\it R}_{\mathrm{gd}}$	$\tau$
[mS/mm]	[fF/mm]	[fF/mm]	[fF/mm]	[mS/mm]	[$\Omega$mm]	[$\Omega$mm]	[ps]
1000	1060	280	150	50	0.11	0.31	0.5

The resistive parasitics applied are extracted and read (Table 4.3):

Table 4.3: Applied resistive parasitic elements.

${\it R}_{\mathrm{S}}$	${\it R}_{\mathrm{G}}$	${\it R}_{\mathrm{D}}$	${\it R}_{\mathrm{SM}}$	${\it R}_{\mathrm{DM}}$
[$\Omega$mm]	[$\Omega$]	[$\Omega$mm]	[$\Omega$mm]	[$\Omega$mm]
0.3	1.9	0.35	0.1	0.1

The metal parts $RSM$ and ${\it R}_{\mathrm{DM}}$ describe the resistance of the metalization. For the technology the following inductive and capacitive parasitic elements are extracted for a ${\it W}_{\mathrm{g}}$= 2$\times$ 60 $\mu$m device (Table 4.4).

Table 4.4: Applied parasitic elements.

${\it L}_{\mathrm{S}}$	${\it L}_{\mathrm{G}}$	${\it L}_{\mathrm{D}}$	${\it C}_{\mathrm{pgs}}$	${\it C}_{\mathrm{pgd}}$	${\it C}_{\mathrm {OUT}}$	port extension
[pH]	[pH]	[pH]	[fF]	[fF]	[fF]	[ps]
0.5	22	23	9	3	4.5	1.45