4.2.1 Electrical Characteristics

Figure 4.2 shows the electrical characteristics of the two-drain MAGFET. Simulation results are compared with experimental data at room temperature. The bias are zero volts at source and substrate, and the drains are set to $1.0$ V. A very good agreement between experimental and simulated data is obtained. The simulation grid used for this and the following results is shown in Figure 4.3. A cut is made at 90 $\mu$m from the source side along the width of the device. The current density is equally shared by both drains as it can be seen in Figure 4.4, where the $x$ axis goes from the silicon oxide-silicon interface towards the substrate and the $y$ axis is the width of the two-drain MAGFET.

Figure 4.2: Drain currents as a function of
the gate voltage at 300 K.

Figure 4.3: Three-dimensional view of the simulation grid.

Figure 4.4: Current density at 300 K and
zero magnetic field.