4.3 Analysis at 77 K

The carrier deflection inside the inversion layer can be defined as follows:

$$L \mu_n \vert\mathbf{B}\vert$$ (4.2)

where $L$ is the length of the device, $\mu_n$ is the electron mobility in the inversion layer, and $\vert\mathbf{B}\vert$ is the strength of the magnetic field. It is obvious that the larger the magnetic field, the larger the deflection of the current lines inside the channel. If a larger deflection is desirable at low magnetic field strengths, increasing the electron mobility of the inversion layer is one available solution. By cooling the two-drain MAGFET to 77 K (liquid Nitrogen temperature), the electron mobility increases. As a result, larger deflections are obtained with smaller magnetic field strengths [16] and the differential current will be higher.