From the numerical point of view, the simulation of semiconductor devices at 77 K should not be different from the 300 K case, if critical quantities are properly scaled. Slight differences should come from the physical models used for the characteristic parameters. Except for high gate voltages, plots showing the potential, electron concentration, electric field, and electron mobility have a similar shape as their counterpart at 300 K. Having this in mind, only figures with evident differences are presented.
Figure 4.87 and Figure 4.88 show the potential inside
the channel at 110 m from the source and at 1 nm from the silicon
oxide-silicon interface at 77 K for a gate voltage of 1 V and of 5 V,
respectively, and different magnetic fields. Although the cuts are made
close to the drains, Figure 4.88 is different from its 300 K
counterpart, where the potential is stronger influenced by the gate than
by the drains.
Figure 4.89 and Figure 4.90 show the electron concentration
inside the channel at 110 m from the source and at 1 nm from the silicon
oxide-silicon interface at 77 K for a gate voltage of 1 V and of 5 V,
respectively, and different magnetic fields. Except for
the case of a gate voltage of 1 V, the electron concentration behaves differently
as compared to the 300 K case (see Figures 4.52 and 4.57).
This behavior can be attributed to the cryogenic operation of silicon devices.
In this case the charge ionization, the process which electrically turns on the
charges for electric conduction, is dominated by the electric field, because
the carriers (in this case, electrons) obtain energy from both the lateral and
the transversal electric field. The extreme points in the electron concentration
in Figure 4.90 are the result of the influence of the lateral electric field.
Figure 4.91 and Figure 4.92 show the electric field inside
the channel at 110 m from the source and at 1 nm from the silicon
oxide-silicon interface at 77 K for a gate voltage of 1 V and of 5 V,
respectively, and different magnetic fields. Except for the case of a gate
voltage of 1 V, the electric field behaves differently from the 300 K case.
Rodrigo Torres 2003-03-26