Full three-dimensional simulations of a three-drain MAGFET taking into account a magnetic field have been carried out. By using the default values of the various physical models, the relative sensitivity has been simulated at various bias conditions and geometric conditions. The differential current at the lateral drains of the three-drain MAGFET shows that the three-drain MAGFET would have a better performance at room temperature than the two-drain MAGFET. However, the performance of the three-drain MAGFET at liquid Nitrogen temperature is not as highly improved as in the two-drain MAGFET analysis.
A plausible explanation of this behavior can be given in terms of drain current magnitudes. Because the central drain current is higher than the lateral currents, at low temperature operation such currents also increase in magnitude. Although the differential current increases too, the central drain currents rises so rapidly that the relative sensitivity decreases. From the simulations results given in the previous section, the sharing of the total drain current by the drains shows a complex interaction with the magnetic field. Experimental data would be helpful to better determine and analyze this interaction.
Rodrigo Torres 2003-03-26