To use a specific interface model at the interface of two semiconductor segments the appropriate value has to be assigned to the interfaceDD or interfaceHD keywords in the Electron or Hole subsection of the two segments within the Phys section of the input deck. The interface model is used only if the values of these keywords are the same for both segments. The "CQFL" model is the default model and is also used in case the specified values are not equal.
The following example shows how to specify the TFE model for electrons at the interface between the segments named Channel and UpperBarrier for drift-diffusion and hydrodynamic simulations. For the drift-diffusion interface model the effective tunnel length is modified from its default value to 5 nm.
Phys { ... +Channel { Electron { interfaceDD = "TFE"; interfaceHD = "TFE"; InterfaceDD { TFE { d = 5e-9 m; } } } } +UpperBarrier { Electron { interfaceDD = "TFE"; interfaceHD = "TFE"; InterfaceDD { TFE { d = 5e-9 m; } } } } ... }
In the following J denotes the current density, S the energy flux density, and E the difference of band edges. The carrier concentration is denoted by .
The following three carrier interface models are implemented in MINIMOS-NT:
J2 | = J1 | (A1) |
= . . exp - | (A2) | |
S2 | = S1 - . E . J2 | (A3) |
T2 | = T1 | (A4) |
J2 | = J1 | (A5) |
J2 | = q . v2 . - . v1 . . exp - | (A6) |
S2 | = S1 - . E . J2 | (A7) |
S2 | = - kB . T2 . v2 . - . kB . T1 . v1 . . exp - | (A8) |
with the thermionic emission velocity
J2 | = J1 | (A10) |
J2 | = q . v2 . - . v1 . . exp - | (A11) |
S2 | = S1 - . E - E . J2 | (A12) |
S2 | = - kB . T2 . v2 . - . kB . T1 . v1 . . exp - | (A13) |
with the thermionic emission velocity (A.9) and the barrier hight lowering
E = | (A14) |
For E = 0 the TFE model reduces to the TE model.