List of Publications

1

Rovitto, M., Papaleo, S., and Ceric, H. (2016). Diffuse Interface Model for Electromigration Void Evolution in Open Through Silicon Vias. IEEE Trans. Device Mater. Rel, submitted.

2

Papaleo, S., Filipovic, L., Zisser, W. H., Rovitto, M., Ceric, H., and Selberherr, S. (2016). Modeling Intrinsic Stress Build-Up During Tungsten Deposition in Open Through Silicon Vias. Thin Solid Films, submitted.

3

Rovitto, M. and Ceric, H. (2016). Electromigration Induced Voiding and Resistance Change in Three-Dimensional Copper Through Silicon Vias. In Proc. ECTC, 550-556.

4

Papaleo, S., Rovitto, M., and Ceric, H. (2016). Mechanical Effects of the Volmer-Weber Growth in the TSV Sidewall. In Proc. ECTC, 1617-1622.

5

Ceric, H., de Orio, R. L., and Rovitto, M. (2016). TCAD Approach for the Assessment of Interconnect Reliability. In Proc. IRSP, T21.

6

Ceric, H. and Rovitto, M. (2015). Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study. In Proc. SISPAD, 194-197.

7

Rovitto, M., Zisser, W. H., and Ceric, H. (2015). Analysis of Electromigration Void Nucleation Failure Time in Open Copper TSVs. In Proc. IPFA, 434-438.

8

Rovitto, M., Zisser, W. H., Ceric, H., and Grasser T. (2015). Electromigration Modelling of Void Nucleation in Open Cu-TSVs. In Proc. EuroSimE, 1-5.

9

Ceric, H., Zisser, W. H., Rovitto, M., and Selberherr, S. (2014). Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study. In Proc. SISPAD, 221-224.