List of Publications

[1] A. P. Singulani, H. Ceric, and S. Selberherr, “Stress evolution in the metal layers of TSVs with Bosch scallops,” Microelectronics Reliability , vol. 53, no. 9, pp. 1602–1605, 2013.

[2] H. Ceric, A. P. Singulani, R. Orio, and S. Selberherr, “Impact of intermetallic compound on solder bump electromigration reliability,” in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2013, pp. 73–76.

[3] A. P. Singulani, H. Ceric, and E. Langer, “Stress reduction induced by Bosch scallops on an open TSV technology,” in International Interconnect Technology Conference (IITC). IEEE, 2013, pp. 1–2.

[4] A. P. Singulani, H. Ceric, L. Filipovic, and E. Langer, “Impact of Bosch scallops dimensions on stress of an open through silicon via technology,” in International Conference onThermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2013, pp. 1–6.

[5] A. P. Singulani, H. Ceric, and E. Langer, “Stress evolution on tungsten thin-film of an open through silicon via technology,” in International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). IEEE, 2013, pp. 212–216.

[6] A. P. Singulani, H. Ceric, and S. Selberherr, “Stress estimation in open tungsten TSV,” in International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2013, pp. 65–68.

[7] A. P. Singulani, H. Ceric, E. Langer, and S. Carniello, “Effects of Bosch scallops on metal layer stress of an open through silicon via technology,” in International Reliability Physics Symposium (IRPS) . IEEE , 2013, pp. CP–2.

[8] C. Cassidy, J. Kraft, S. Carniello, F. Roger, H. Ceric, A. P. Singulani, E. Langer, and F. Schrank, “Through silicon via reliability,” IEEE Transactions on Device and Materials Reliability, vol. 12, no. 2, pp. 285–295, 2012.

[9] A. P. Singulani, H. Ceric, and S. Selberherr, “Thermo-mechanical simulations of an open tungsten TSV,” in Electronics Packaging Technology Conference (EPTC). IEEE, 2012, pp. 107–111.