5. Modeling of Strained $\textrm {Si}_{1-x}\textrm {Ge}_{x}$ on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ Substrates

In this chapter the results of Monte Carlo simulations of electron transport in strained SiGe layers are presented. First the low field electron mobility is investigated as a function of the Ge composition both in the active layer and the substrate for the undoped case. Then strained doped layers are studied. Additionally the influence of the substrate orientation is demonstrated. Finally, a small signal analysis is performed for both non-degenerate and degenerate strained layers. The zero field and small signal Monte Carlo methods developed in the previous chapter are employed to calculate the low field mobility tensor and the small signal response functions at high electric fields, respectively. All results are presented for room temperature.
Subsections

5.1 Low Field Electron Mobility in Undoped Layers
- 5.1.1 Si layers on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ substrates
  - 5.1.1.1 Ge Composition Dependence of Perpendicular and In-plane Components
  - 5.1.1.2 Substrate Orientation Dependence
- 5.1.2 $\textrm {Si}_{1-x}\textrm {Ge}_{x}$ layers on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ substrates
5.2 Low Field Electron Mobility in Doped Layers
5.3 Small Signal Response

S. Smirnov:


Previous: 4.4.3 Monte Carlo Algorithm for the Impulse Response Up: Dissertation Sergey Smirnov Next: 5.1 Low Field Electron Mobility in Undoped Layers

5. Modeling of Strained on Substrates

5. Modeling of Strained $\textrm {Si}_{1-x}\textrm {Ge}_{x}$ on $\textrm {Si}_{1-y}\textrm {Ge}_{y}$ Substrates