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The intensity of defect generation is controlled by the extent of how hot the carriers are. The measure of this may be the local value of the electric field, the carrier dynamic temperature, the extension of high-energy tails of the DF, etc. In the developed approach this carrier transport module provides the information regarding the carrier energy distribution function and is used for the simulation of the device characteristics. This information can only be obtained by a proper treatment of carrier transport, which is the essential sub-task of the HCD model. The carrier transport treatment is to be performed for transistors of different topologies covering the range from ultra-scaled short-channel devices to high-voltage transistors. In this Chapter the existing schemes for determining the distribution of hot carriers in semiconductor devices are described.
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