To Pacharan.

• Abstract

• Kurzfassung

• Contents

• List of Figures

• List of Tables

• List of Abbreviations

• 1. Introduction
  • 1.1 Historical Background
  • 1.2 Main Physics-Based Concepts for HCD Modeling
  • 1.3 Characteristic Features of HCD
    • 1.3.1 Different Nature of HCD Mechanisms
    • 1.3.2 HCD in High-Voltage Devices
    • 1.3.3 HCD in Scaled Devices
    • 1.3.4 Strong Localization
    • 1.3.5 Interface, Border and Oxide Traps
    • 1.3.6 Temperature Behavior
  • 1.4 Analysis and Comparison of Existing Physics-Based HCD Models
    • 1.4.1 Hess Model
    • 1.4.2 Penzin Model
    • 1.4.3 Reaction-Diffusion Framework
    • 1.4.4 The Energy-Driven Paradigm of Rauch and LaRosa
    • 1.4.5 Bravaix Model
  • 1.5 HCD Model Based on the Carrier Distribution Function
  
  
• 2. Carrier Transport
  • 2.1 Boltzmann's Transport Equation
  • 2.2 Hydrodynamic Transport Model
  • 2.3 Drift-Diffusion Transport Model
  • 2.4 Monte Carlo Method
    • 2.4.1 Multiple Refresh
    • 2.4.2 Non-Self-Consistent Simulation
  • 2.5 The Spherical Harmonics Expansion
  • 2.6 Employed Simulation Tools
  
  
• 3. Defect Creation
  • 3.1 Microscopic Model for Interface State Creation
  • 3.2 Secondary Generated Carriers as a Crucial Component for Modeling of HCD
  • 3.3 Analysis of Worst-Case HCD Conditions in the Case of n- and p-channel MOSFETs
    • 3.3.1 WCC of Long-Channel Devices
    • 3.3.2 WCC of High-Voltage Devices
  • 3.4 Impact of the Carrier Distribution Function on HCD Modeling
    • 3.4.1 Comparison of Different Transport Module Realizations
    • 3.4.2 Analysis of WCC within Simplified Transport Schemes
  
  
• 4. The Charge-Pumping Technique
  • 4.1 Basic Principles of Charge Pumping Measurements
    • 4.1.1 Local Threshold and Flatband Voltages
    • 4.1.2 Effective Channel Length
  • 4.2 Interface State Density Profile of Unstressed Device
    • 4.2.1 Verification of the Interface State Density Distribution Uniformity
    • 4.2.2 Interface State Profile of an Unstressed Device
    • 4.2.3 Impact of Pre-stressed Interface State Density Profile on HCD Modeling
  • 4.3 Charge-Pumping Extraction Techniques for the Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs
    • 4.3.1 Local Oxide Capacitance
      • 4.3.1.1 Conformal-Mapping Method
      • 4.3.1.2 Estimation of Approach Importance Area
      • 4.3.1.3 Lee's Approach for Modeling of Local Oxide Capacitance
    • 4.3.2 Comparison of Interface State Profiles Extracted with Different Capacitance Approaches
    • 4.3.3 Extraction Techniques Description
      • 4.3.3.1 Chim's Approach
      • 4.3.3.2 Mahapatra's Approach
      • 4.3.3.3 Lee's Approach
      • 4.3.3.4 Li's Approach
      • 4.3.3.5 Extraction Methods Results Comparison
  • 4.4 Analysis of the Threshold Voltage Turn-Around Effect in n-MOSFETs Due to Hot-Carrier Stress
  • 4.5 HCD Caused Interface State Profile - Simulations vs. Experiment
  
  
• 5. Analytic Modeling Approach for HCD
  • 5.1 An Analytical Approach for Physical Modeling of HC Induced Degradation
  • 5.2 Impact of Gate Oxide Thickness Variations on HCD
  
  
• 6. Summary and Outlook

• Bibliography

• Own Publications

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