Own Publications

1

M. Bina, K. Rupp, S. Tyaginov, O. Triebl, and T. Grasser, ``Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation,'' in Technical Digest International Electron Devices Meeting (IEDM), 2012.
(in print).

2

M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, and T. Grasser, ``Simulation of reliability on nanoscale devices,'' in Proceedings Simulation of Semiconductor Processes and Devices (SISPAD), pp. 109-112, 2012.

3

S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J.-M. Park, and C. Jungemann, ``Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET,'' in Proceedings Simulation of Semiconductor Processes and Devices (SISPAD), pp. 123-126, 2011.

4

O. Triebl and T. Grasser, ``Numerical Power/HV device modeling,'' in Power/HVMOS Devices Compact Modeling (W. Grabinski and T. Gneiting, eds.), ch. 1, pp. 1-32, Springer, 2010.
ISBN: 978-90-481-3045-0.

5

S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.-M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, and T. Grasser, ``Interface traps density-of-states as a vital component for hot-carrier degradation modeling,'' Microelectronics Reliability, vol. 50, no. 9-11, pp. 1267-1272, 2010.

6

S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.-M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, and T. Grasser, ``Interface traps density-of-states as a vital component for hot-carrier degradation modeling,'' in Proceedings European Symposium on Reliability Electron Devices, Failure Physics and Analysis (ESREF), 2010.

7

I. Starkov, S. Tyaginov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.-M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, and T. Grasser, ``Analysis of worst-case hot-carrier conditions for high voltage transistors based on full-band Monte-Carlo simulations,'' in Proceedings IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-6, 2010.

8

S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.-M. Park, H. Enichlmair, M. Karner, C. Kernstock, E. Seebacher, R. Minixhofer, H. Ceric, and T. Grasser, ``Hot-carrier degradation modeling using full-band Monte-Carlo simulations,'' in Proceedings IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 1-5, 2010.

9

I. Starkov, S. Tyaginov, H. Enichlmair, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J.-M. Park, H. Ceric, and T. Grasser, ``HC degradation model: interface state profile - simulations vs. experiment,'' in Book of Abstracts Workshop on Dielectrics in Microelectronics (WODIM), p. 128, 2010.

10

P. Hehenberger, T. Aichinger, T. Grasser, W. Gös, O. Triebl, B. Kaczer, and M. Nelhiebel, ``Do NBTI-induced interface states show fast recovery? A study using a corrected on-the-fly charge-pumping measurement technique,'' in Proceedings IEEE International Reliability Physics Symposium (IRPS), pp. 1033-1038, 2009.

11

H. Kosina, O. Triebl, and T. Grasser, ``Box method for the convection-diffusion equation based on exponential shape functions,'' in Proceedings Simulation of Semiconductor Processes and Devices (SISPAD), vol. 12, pp. 317-320, 2007.

12

O. Triebl and T. Grasser, ``Vector discretization schemes in technology CAD environments,'' Romanian Journal of Information Science and Technology, vol. 10, no. 2, pp. 167-176, 2007.

13

O. Triebl and T. Grasser, ``Investigation of vector discretization schemes for box volume methods,'' in Proceedings NSTI-Nanotech, vol. 3, pp. 61-64, 2007.

14

R. Entner, T. Grasser, O. Triebl, H. Enichlmair, and R. Minixhofer, ``Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures,'' Microelectronics Reliability, vol. 47, no. 4-5, pp. 697-699, 2007.

15

O. Triebl and T. Grasser, ``Vector discretization schemes based on unstructured neighborhood information,'' in Proceedings International Semiconductor Conference (CAS), vol. 2, pp. 337-340, 2006.

16

T. Grasser, R. Entner, O. Triebl, H. Enichlmair, and R. Minixhofer, ``TCAD modeling of negative bias temperature instability,'' in Proceedings Simulation of Semiconductor Processes and Devices (SISPAD), pp. 330-333, 2006.

17

M. Wagner, G. Span, S. Holzer, V. Palankovski, O. Triebl, and T. Grasser, ``Power output improvement of silicon-germanium thermoelectric generators,'' in SiGe and Ge: Materials, Processing, and Devices, vol. 3, pp. 1151-1162, ECS Transactions, 2006.

18

M. Wagner, G. Span, S. Holzer, O. Triebl, and T. Grasser, ``Power output improvement of SiGe thermoelectric generators,'' in Abstracts Joint International Meeting of the Electrochemical Society (ECS), p. 1516, 2006.

19

O. Triebl, ``Verfolgen von teilweise verdeckten Kanten mit Hilfe von Suchlinien,'' Master's thesis, Technische Universität Wien, 2005.