3.7.1 Effective Electron Mass in Unstrained Si
The conduction band minima of Si lie on the
axes at
points
distant
from the
symmetry points. From the knowledge of the eigenenergies
and
the wavefunctions
at the conduction band minima
, the
eigenvalues
at neighboring points
can be expanded to
second order in in terms of the unperturbed wavefunctions and eigenenergies
using nondegenerate perturbation theory
|
(3.62) |
Here, we used the index notation
for
and Dirac's notation for the matrix elements
|
(3.63) |
Linear terms in vanish because
has been assumed
to be a minimum. The dispersion relation (3.62) can be
rewritten in terms of the effective mass tensor
of band
|
(3.64) |
In crystals with diamond structure, the effective mass tensor for the lowest
conduction band is diagonal and can be characterized by two masses.
For the [001] valley one obtains in the principal coordinate system
where denotes the band index of the lowest conduction
band. Thus, the energy dispersion (3.62) can be written in
the form of (3.28).
The derived equations show that because of the
coupling between electronic states in different bands via the
term, an electron in a solid has a mass different from that
of a free electron. The coupling terms depend on two factors
- The separation in energy between two bands and determines the
relative importance of the contribution of band to the effective mass of band
. The bigger the energetic gap between two bands the smaller is the effect
on the effective mass.
- The matrix element theorem [Tinkham64] can be used to find all bands
that have nonzero matrix elements
by applying group theoretical considerations to
determine all possible symmetries
can have.
Using the empirical pseudopotential method for band structure calculations (see Section 3.8) it is
possible to numerically evaluate the matrix elements and hence to obtain the
effective masses from (3.64).
E. Ungersboeck: Advanced Modelling Aspects of Modern Strained CMOS Technology