Contents

• List of Figures
• 1. Theory of Transport Modeling
  • 1.1 Basic Equations
    • 1.1.1 Derivation of Poisson's Equation
    • 1.1.2 Schrödinger-Poisson System
    • 1.1.3 Boltzmann's Transport Equation
  • 1.2 Band Structure
    • 1.2.1 Bulk
    • 1.2.2 Subbands
  • 1.3 Quantum Transport
    • 1.3.1 Non-Equilibrium Green's Function Method
    • 1.3.2 Wigner Monte Carlo
    • 1.3.3 Quantum Macroscopic Models
    • 1.3.4 Quantum Correction Models
  • 1.4 Semi-Classical Transport
    • 1.4.1 Method of Moments
    • 1.4.2 Modeling of the Scattering Operator
    • 1.4.3 Macroscopic Transport Models
    • 1.4.4 Monte Carlo Method
    • 1.4.5 Spherical Harmonics Expansion
  
  
• 2. The Three-Dimensional Electron Gas
  • 2.1 Table Based Macroscopic Transport Models
  • 2.2 Device Studies
    • 2.2.1 Long Channel Devices
    • 2.2.2 Short Channel Effects
    • 2.2.3 Application of Higher-Order Models on Deca-Nanometer Devices
  
  
• 3. Homogeneous Transport in Inversion Layers
  • 3.1 Subband Monte Carlo Model
  • 3.2 Surface Roughness Scattering
  • 3.3 Influence of Surface Roughness Scattering on Higher-Order Transport Parameters
  • 3.4 Comparison with Bulk Simulations
  
  
• 4. Subband Macroscopic Models
  • 4.1 The Model
  • 4.2 The Quantum Correction Model
  • 4.3 Comparison with Device-SMC
    • 4.3.1 Long Channel Device
    • 4.3.2 Short Channel Devices
  • 4.4 Influence of SRS on Device Simulations
  • 4.5 2D Subband Simulations versus 3D Bulk Simulations
  
  
• 5. Material Investigations
  • 5.1 Higher-Order Parameter Extraction
    • 5.1.1 Silicon-Germanium
    • 5.1.2 Gallium Arsenide
  
  
• 6. Summary and Conclusion
• Bibliography
• Own Publications