2.3 Normally-Off HEMT
The properties of GaN and AlN and their heterostructures have
encouraged the research of AlGaN/GaN based transistors for various
applications in the last decade. Consequently, outstanding results
have been reported for the depletion mode (D-mode) high electron
mobility transistors. However, for several applications enhancement
mode (E-mode) devices are essential.
In analog electronics E-mode devices supersede the negative voltage
supply and also assure a safe state in case of power loss. In digital
electronics, they allow complementary FET-based logic
[39]. Normally-off operation is also a requirement for
automotive applications (e.g. hybrid vehicles) [33]. Despite
the interest in E-mode operation, the excellent results as in D-mode
devices remain to be demonstrated.
Subsections
S. Vitanov: Simulation of High Electron Mobility Transistors