The dielectric constant of the three materials GaN, InN, and AlN is discussed in Section 3.2, Section 3.3, and Section 3.4, respectively. Here, the range of the reported values is shown in Table 4.2. The values used for the static permittivity for GaN, AlN, and InN are 8.9, 8.5, and 15.3, respectively.
The permittivity of a ternary semiconductor alloy ABC depending on the material composition is interpolated by a quadratic function of the permittivities of the basic materials and [286]:
(4.64) |