A.10 Setup for the Extended Mixed-Mode AC Simulation

The example shows the Circuit section for the simulation of a heterojunction bipolar transistor:

Circuit
{
  Vbe : ~Devices.V { P = "Vbe"; M = "gnd"; V0 = ~B; acV0   = 1.0 V; 
                                                    acPort =     1; }
  Vce : ~Devices.V { P = "Vce"; M = "gnd"; V0 = ~C; acV0   = 0.0 V; 
                                                    acPort =     2; }
  HBT : ~MyDevices.HBT { Base      = "Vbe";
                         Emitter   = "gnd";
                         Collector = "Vce"; }
}

The active device is the heterojunction bipolar transistor. Its setup is found in the MyDevices.HBT section not shown here. The three terminals are connected with the Vbe, ground, and Vce node of the circuit, respectively.

Two voltage sources are defined between Vbe and ground as well as between Vce and ground. While the steady-state voltages refer to global input-deck variables B and C, respectively, the small-signal voltages of $1.0\,$V and $0.0\,$V are directly set. According to the acPort configuration, both voltage sources are part of the admittance matrix calculation feature with the base voltage in the first and collector voltage in the second row.