a |
radius of sphere [m]; multiplier of congruential
random number generator |
A |
complex amplitude |
bx |
orthonormal vector in a Krylov subspace |
B |
complex amplitude |
Bm |
orthonormal basis in m-dimensional Krylov subspace |
c |
offset of a linear congruential random number generator |
c(t) |
complex time dependent scattering amplitude |
C |
capacitance [F] |
C |
capacitance matrix |
Cx |
sub-matrices of the capacitance matrix |
Cij |
capacitance between conductor i and j [F] |
|
sum of capacitances [F] |
|
effective capacitance of a Thévenin equivalent circuit |
d |
diameter or width [m] |
Dpq(X) |
denominator polynomial for Padé approximation of
degree p+q |
|
delta-function |
|
Kronecker-delta; is 1 for m=n otherwise 0. |
|
difference between two values (
) |
e |
elementary charge
As;
charge of one electron (-e) |
e1 |
unit vector |
E |
energy [J] or [eV] |
E |
error matrix |
Ec |
conduction band edge [eV] |
EC |
Coulomb energy [eV] |
EF |
Fermi energy [eV] |
EF,i |
Fermi energy of intrinsic semiconductor [eV] |
Ef |
energy of a final state (for instance after tunneling) [eV] |
Ei |
energy of an initial state (for instance before tunneling) [eV] |
|
total energy stored in a system [eV] |
|
dielectric permittivity
|
|
dielectric permittivity of vacuum
As/Vm |
|
relative dielectric permittivity [1] |
f |
frequency [1/s] |
f() |
Fermi function |
F |
Helmholtz's free energy [eV] |
|
tunnel rate [1/s] |
|
xth-order co-tunneling rate [1/s] |
|
tunnel rate from state j to state i [1/s] |
|
tunnel rate from state
S' to state
S [1/s] |
h |
Planck constant
Js |
|
Js |
H |
Hamilton operator |
Hm |
upper Hessenberg matrix |
I |
electric current [A] |
I |
unit matrix |
Jx |
tunnel junction x |
Ji |
Jordan block |
k |
wave number [1/m] |
kB |
Boltzmann constant
J/K |
Km |
m-dimensional Krylov subspace |
|
Fermi wavelength [m] |
|
matrix eigenvalue |
m |
module of a linear congruential random number generator |
me |
electron mass
kg |
me* |
effective electron mass [kg] |
n |
electron concentration; charge carrier concentration
[
] |
|
net carrier concentration
[
] |
N |
number of electrons; number of nodes |
|
time averaged number of electrons |
Nc |
number of charge-nodes |
Nf |
number of floating-nodes |
Nfm |
number of nodes in a macro-node |
Nm |
number of macro-nodes |
Np |
number of potential-nodes |
Npq(X) |
numerator polynomial for Padé approximation of
degree p+q |
|
eigenvalues [1/s] |
|
difference of two eigenvalues
[1/s] |
|
electron hole excitation energy |
p |
hole concentration [
] |
Pi(t) |
probability of state i |
|
Laplace transform of Pi(t) |
|
error probability |
p |
state probability vector |
p(S,t) |
probability density function in state space |
|
electrostatic potential [V] |
|
potential vector for potential-nodes and floating-nodes |
|
potential vector for charge-nodes |
|
potential of a potential-node or floating-node from which
an electron tunnels |
|
potential of a potential-node or floating-node to which an
electron tunnels |
|
wave function |
|
complex conjugate wave function |
|
orthonormal eigenfunctions |
q |
charge [As] |
|
sum of charges [As] |
|
charge of macro-node |
q |
charge vector |
qp,f |
charge vector for potential-nodes and floating-nodes |
qc |
charge vector for charge-nodes |
|
critical charge for the Coulomb blockade [As] |
Q0 |
background charge |
r |
magnitude of space vector [m]; random number |
r |
space vector |
rn |
on the interval [0,1] uniformly distributed random number |
|
integer random number |
RQ |
quantum resistance
|
RT |
tunnel resistance [
] |
Rpq(X) |
rational Padé approximation of order p+q |
|
spectral radius |
t |
time [s] |
T |
absolute temperature [K] |
|T|2 |
tunnel transmission probability [1] |
|
duration to the next tunnel event [s] |
|
average duration to the next tunnel event [s] |
|
angle [rad] |
V |
voltage [V] |
Vb |
bias voltage [V] |
|
input voltage [V] |
|
output voltage [V] |
|
threshold voltage [V] |
|
critical voltage for the Coulomb blockade [V] |
V(x) |
one-dimensional potential function |
W |
work done by voltage sources [J] |
x |
x-coordinate [m] |