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- abbreviations
- Definition of Terms and
- accelerating the simulator
- 4.2.4 Accelerating the Simulator
- access time
- Read/Write Errors and Access
- applications of single-electronics
- 5 Applications
- approximate of the matrix exponential operator
- 3.3.1 Krylov Subspace Approximate
- Arnoldi algorithm
- H Arnoldi Algorithm
- asymmetry in tunnel junctions
- 2.7 The Double Tunnel
- background charge
- 2.7 The Double Tunnel
| 2.7 The Double Tunnel
| 2.8 Single Electron Transistor
| 2.8 Single Electron Transistor
| 5.2.3 Random Background Charge
- independence
- 5.2.10 Multi Island Memory
- independent memory
- 5.2.9 Qo Independent Memory
- barrier
- 2.4.2 Tunnel Rate
- bibliography
- Bibliography
- birth-death process
- 3.2 Tunneling: a Stochastic
- bit error
- Bit Errors
- Bloch oscillations
- 1 Introduction: What is
- Boltzmann approximation
- B Fermi Energy Dependence
- branch
- 3.1.1 Notation
- capacitance
- calculation
- A Capacitance Calculations
- effective
- 3.1.5 Method of Critical
- of arbitrary arrangement of spheres
- A.4 Capacitance of an
- of sphere
- A.1 Self Capacitance of
- of sphere with dielectric shell
- A.2 Self Capacitance of
- of spheres in a line
- A.4 Capacitance of an
- of two spheres
- A.3 Capacitance of Two
- stray
- 2.6 Influence of the
| 2.7 The Double Tunnel
- capacitance matrix
- 2.1.1 Electron Electron Interaction
| 3.1.2 Electrostatic Energy
- elements of
- 2.1.1 Electron Electron Interaction
- inverse of
- 2.1.1 Electron Electron Interaction
- carrier concentration
- Material Properties
| 2.1.1 Electron Electron Interaction
- characteristic energies
- 2.1 Characteristic Energies
- charge
- background
- 2.7 The Double Tunnel
| 2.7 The Double Tunnel
| 2.8 Single Electron Transistor
| 2.8 Single Electron Transistor
| 5.2.3 Random Background Charge
- polarization
- 2.2 Work Done by
| 2.7 The Double Tunnel
- relaxation
- 2.2 Work Done by
- charge, electric
- 1 Introduction: What is
- charge-node
- 3.1.1 Notation
- circuit editor
- 4.2.1 Graphical User Interface
- circuit, single-electron
- 3.1.1 Notation
- circuits
- manufacturability
- 5.2.5 Manufacturability
- co-tunneling
- 2.9 Co Tunneling
| 5.2.2 Error Rate/Probability
- elastic
- 2.9 Co Tunneling
- inelastic
- 2.9 Co Tunneling
| 2.9 Co Tunneling
- second order at zero temperature
- F Second Order Co
- code structure of SIMON
- 4.2 Code structure
- combination of Monte Carlo method with direct calculation
- 3.6 Combination of Monte
- comparison between master equation and Monte Carlo method
- 3.5 Comparison between Master
- complexity of memories
- 5.2.11 Discussion of Simulation
- conduction band edge
- 2.4.2 Tunnel Rate
- conservation of particles
- E Fermi's Golden Rule
- Cooper pair
- 1 Introduction: What is
- Coulomb blockade
- 1 Introduction: What is
| 2.5 Minimum Tunnel Resistance
| 2.7 The Double Tunnel
- Coulomb energy
- 5.2.1 Operation Temperature
- Coulomb gap
- 2.7 The Double Tunnel
- Coulomb oscillations
- 1 Introduction: What is
| 2.8 Single Electron Transistor
| 5.2.1 Operation Temperature
- critical charge
- 3.1.5 Method of Critical
- critical voltage, method of
- 3.1.5 Method of Critical
- current oscillations
- 2.6 Influence of the
- current source
- Current Sources
- curriculum vitae
- Curriculum Vitae
- decay process
- 5.2.2 Error Rate/Probability
- degeneracy carrier concentration
- Material Properties
- density of states
- 2.4.2 Tunnel Rate
| 2.9 Co Tunneling
- discussion of simulation results
- 5.2.11 Discussion of Simulation
- divergence of tunnel rate
- 2.9 Co Tunneling
- double tunnel junction
- 2.7 The Double Tunnel
- IV-characteristic
- 2.7 The Double Tunnel
- free energy of
- 2.7 The Double Tunnel
- dripping tap
- 1 Introduction: What is
- duration to next tunnel event
- 4.2.2 Flow Chart
- dynamic memory
- 5.2.7 Multi Tunnel Junction
- effective capacitance
- 3.1.5 Method of Critical
- effective mass
- Material Properties
| 2.1.2 Quantum Confinement Energies
- elastic co-tunneling
- 2.9 Co Tunneling
- electric charge
- 1 Introduction: What is
- electromagnetic environment
- influence of
- 2.6 Influence of the
- electron box
- 1 Introduction: What is
- electron cloud
- 1 Introduction: What is
- electron-electron interaction
- 2.1.1 Electron Electron Interaction
- electrostatic charging energy
- 2.1.1 Electron Electron Interaction
- electrostatic energy
- 3.1.2 Electrostatic Energy
- of double tunnel junction
- 2.7 The Double Tunnel
- energy
- 2.1 Characteristic Energies
- electrostatic
- 2.1.1 Electron Electron Interaction
| 3.1.2 Electrostatic Energy
- Fermi
- 2.1.1 Electron Electron Interaction
- free
- 3.1.4 Free Energy
- Helmholtz's free
- 2.3 Helmholtz's Free Energy
- level
- 2.4.2 Tunnel Rate
- levels
- 2.1.2 Quantum Confinement Energies
- quantum confinement
- 2.1.2 Quantum Confinement Energies
- spectrum
- 2.4 Tunneling
- energy gap
- Material Properties
- error
- bit
- Bit Errors
- read/write
- Read/Write Errors and Access
- error probability
- 5.2.2 Error Rate/Probability
- error rate
- 5.2.1 Operation Temperature
| 5.2.2 Error Rate/Probability
- event tree
- 3.6 Combination of Monte
- exponential of a matrix
- 3.3.1 Krylov Subspace Approximate
- fabrication techniques
- 5.1 Fabrication Techniques
- Fermi energy
- Material Properties
| 2.1.1 Electron Electron Interaction
- change in
- 2.1.1 Electron Electron Interaction
- dependence on free charge carrier concentration
- B Fermi Energy Dependence
- Fermi function
- 2.4.2 Tunnel Rate
- integration of
- D Integration of Fermi
- Fermi's golden rule
- 2.4.2 Tunnel Rate
| 2.9 Co Tunneling
| E Fermi's Golden Rule
- Fermi-Dirac distribution
- 2.4.2 Tunnel Rate
- finite lifetime
- 2.9 Co Tunneling
- finite potential well
- C.2 The Finite Potential
- flip-flop
- 5.2.6 Single Electron Flip
- floating-node
- 3.1.1 Notation
- flow chart
- 4.2.2 Flow Chart
- free energy
- 2.3 Helmholtz's Free Energy
| 3.1.4 Free Energy
- change in
- 2.4.2 Tunnel Rate
- of arbitrary circuit
- 3.1 Free Energy of
- of double tunnel junction
- 2.7 The Double Tunnel
- single-electron transistor
- 2.8 Single Electron Transistor
- frequency of Coulomb oscillations
- 1 Introduction: What is
- frequent state space
- 3.6 Combination of Monte
- global rule
- 2.6 Influence of the
- gold clusters
- 5.1.5 Gold Clusters
- golden rule
- 2.4.2 Tunnel Rate
| 2.9 Co Tunneling
| E Fermi's Golden Rule
- graphical circuit editor
- 4.2.1 Graphical User Interface
- graphical user interface
- 4.2 Code structure
- Helmholtz's free energy
- 2.3 Helmholtz's Free Energy
- high impedance environment
- 2.6 Influence of the
- image charge method
- A.3 Capacitance of Two
- implementation issues
- 4 Implementation Issues
- impurity
- 2.7 The Double Tunnel
- independence tobackground charge
- 5.2.10 Multi Island Memory
- inelastic co-tunneling
- 2.9 Co Tunneling
| 2.9 Co Tunneling
- infinite potential well
- 2.1.2 Quantum Confinement Energies
| C.1 The Infinite Potential
- influence of electromagnetic environment
- 2.6 Influence of the
- instable regions of operation
- 3.1.5 Method of Critical
- integration of Fermi functions
- D Integration of Fermi
- intermediate virtual state
- 2.9 Co Tunneling
- intrinsic carrier concentration
- Material Properties
- inversive congruential method
- 4.2.3 Random Number Generator
- IV-characteristic
- of double tunnel junction
- 2.7 The Double Tunnel
- of tunnel junction
- 2.4.2 Tunnel Rate
- Jordan canonical form
- 3.3.1 Krylov Subspace Approximate
- Krylov subspace approximate
- 3.3.1 Krylov Subspace Approximate
- lattice constant
- Material Properties
- lattice structure
- 4.2.3 Random Number Generator
- linear congruential method
- 4.2.3 Random Number Generator
- shuffled
- 4.2.3 Random Number Generator
- local rule
- 2.6 Influence of the
- low impedance environment
- 2.6 Influence of the
- macro-node
- 3.1.1 Notation
- macroscopic quantum tunneling of charge
- 2.9 Co Tunneling
- manufacturability of single-electron circuits
- 5.2.5 Manufacturability
- many body problem
- 3.2 Tunneling: a Stochastic
- Markov process
- 3.2 Tunneling: a Stochastic
- master equation
- 3.2 Tunneling: a Stochastic
- comparison with Monte Carlo method
- 3.5 Comparison between Master
- simulation method
- 3.3 Master Equation Method
- material properties, table of
- Material Properties
- matrix
- exponential
- 3.3.1 Krylov Subspace Approximate
- memory
- Q0-independent
- 5.2.9 Qo Independent Memory
- background charge independent
- 5.2.9 Qo Independent Memory
- complexity
- 5.2.11 Discussion of Simulation
- dynamic
- 5.2.7 Multi Tunnel Junction
- multi-island
- 5.2.10 Multi Island Memory
- multi-tunnel-junction
- 5.2.7 Multi Tunnel Junction
- ring
- 5.2.8 Ring Memory
- static
- 5.2.6 Single Electron Flip
- metal
- 2.1.1 Electron Electron Interaction
- metal tunnel junction
- D Integration of Fermi
- method of critical voltage
- 3.1.5 Method of Critical
- minimum tunnel resistance
- 2.5 Minimum Tunnel Resistance
- Monte Carlo
- simulation method
- 3.4 Monte Carlo Method
- combination with direct calculation
- 3.6 Combination of Monte
- comparison with master equation method
- 3.5 Comparison between Master
- Monte Carlo method
- resolution limit
- Step Size
- multi-island memory
- 5.2.10 Multi Island Memory
- multi-tunnel-junction memory
- 5.2.7 Multi Tunnel Junction
- node
- 3.1.1 Notation
- charge-
- 3.1.1 Notation
- floating-
- 3.1.1 Notation
- macro-
- 3.1.1 Notation
- potential-
- 3.1.1 Notation
- nonlinear congruential method
- 4.2.3 Random Number Generator
- notation
- 3.1.1 Notation
- occupation probability
- 2.4.2 Tunnel Rate
- occupation probability of state
- 3.2 Tunneling: a Stochastic
- opaqueness
- 2.4.1 Transmission Probability
- open system
- 2.2 Work Done by
- operation temperature
- 5.2.1 Operation Temperature
- orthodox theory
- 2.4 Tunneling
| 2.4.2 Tunnel Rate
- orthonormal basis in Krylov subspace
- 3.3.1 Krylov Subspace Approximate
- outlook
- 6 Outlook
- Padé approximation
- 3.3 Master Equation Method
| G Rational Padé Approximations
- particle
- 1 Introduction: What is
- planar quantum dots
- 5.1.3 Planar Quantum Dots
- point process
- 3.2 Tunneling: a Stochastic
- Poisson distribution
- 3.2 Tunneling: a Stochastic
- Poisson process
- 3.2 Tunneling: a Stochastic
- polarization charge
- 2.2 Work Done by
| 2.7 The Double Tunnel
- poly-silicon structures
- 5.1.4 Poly Silicon Structures
- potential barrier
- 2.4.2 Tunnel Rate
- rectangular
- C.3 The Rectangular Potential
- potential well
- finite
- C.2 The Finite Potential
- infinite
- 2.1.2 Quantum Confinement Energies
| C.1 The Infinite Potential
- potential-node
- 3.1.1 Notation
- power consumption
- 5.2.4 Power Consumption
- pseudo random numbers
- 4.2.3 Random Number Generator
| 4.2.3 Random Number Generator
- Q0-independent memory
- 5.2.9 Qo Independent Memory
- quantum confinement energy
- 2.1.2 Quantum Confinement Energies
- quantum dot
- C.1 The Infinite Potential
- quantum fluctuations
- 1 Introduction: What is
- random background charge
- 5.2.3 Random Background Charge
- random number generator
- 4.2.3 Random Number Generator
- inversive congruential method
- 4.2.3 Random Number Generator
- linear congruential
- 4.2.3 Random Number Generator
- nonlinear congruential method
- 4.2.3 Random Number Generator
- shift-register method
- 4.2.3 Random Number Generator
- shuffled linear congruential method
- 4.2.3 Random Number Generator
- step size
- Step Size
- rare state space
- 3.6 Combination of Monte
- read error
- Read/Write Errors and Access
- rectangular potential barrier
- C.3 The Rectangular Potential
- relative permittivity
- Material Properties
- resolution limit of Monte Carlo method
- Step Size
- ring memory
- 5.2.8 Ring Memory
- Schrödinger equation
- C Solutions to Schrödinger's
- self-capacitance
- 2.1.1 Electron Electron Interaction
- semiconductor
- 2.1.1 Electron Electron Interaction
- shadow mask evaporation
- 5.1.1 Shadow Mask Evaporation
- shift-register method
- 4.2.3 Random Number Generator
- short circuit
- 3.1.2 Electrostatic Energy
- shuffled linear congruential method
- 4.2.3 Random Number Generator
- SIMON
- 4 Implementation Issues
- acceleration
- 4.2.4 Accelerating the Simulator
- block diagram
- 4.2 Code structure
- flow chart
- 4.2.2 Flow Chart
- screen shot
- 4.2.1 Graphical User Interface
| 4.2.1 Graphical User Interface
- simulation of single-electron devices
- 3 Simulation of Single
- single electronics
- 1 Introduction: What is
- single-electron memories
- 5.2 Single Electron Memories
- single-electron transistor
- 2.8 Single Electron Transistor
- single-electronics
- applications of
- 5 Applications
- space correlated tunneling
- 2.8 Single Electron Transistor
- space-correlated tunneling
- 2.7 The Double Tunnel
- stable regions of operation
- 3.1.5 Method of Critical
- staircase characteristic
- 2.7 The Double Tunnel
- state transition diagram
- 3.2 Tunneling: a Stochastic
- static memory
- 5.2.6 Single Electron Flip
- step edge cut-off fabrication method
- 5.1.2 Step Edge Cut
- step size
- Step Size
- stray capacitance
- 2.7 The Double Tunnel
- strength parameter
- 2.4.1 Transmission Probability
- summary of the equations describing single-electron tunnel devices
- 4.1 Summary of the
- superconductors
- 1 Introduction: What is
- symbols, list of
- List of Symbols
- terms, definition of
- Definition of Terms and
- Thévenin equivalent circuit
- 3.1.5 Method of Critical
- theory of single electron tunneling
- 2 Theory of Single
- thermal energy
- 1 Introduction: What is
- thermal fluctuations
- 1 Introduction: What is
- total capacitance
- 2.1.1 Electron Electron Interaction
- transient simulation
- 4.2.2 Flow Chart
- transistor, singel-electron
- 2.8 Single Electron Transistor
- transmission probability
- 2.4.1 Transmission Probability
- transmission rate
- E Fermi's Golden Rule
- tunnel
- resistance
- 2.4.2 Tunnel Rate
- time
- 2.4 Tunneling
- tunnel junction
- 1 Introduction: What is
- IV-characteristic
- 2.4.2 Tunnel Rate
- current biased
- 1 Introduction: What is
- double
- 2.7 The Double Tunnel
- metal
- 2.4.2 Tunnel Rate
| D Integration of Fermi
- tunnel rate
- E Fermi's Golden Rule
- Nth-order co-
- 2.9 Co Tunneling
- divergence of
- 2.9 Co Tunneling
- second order co-
- 2.9 Co Tunneling
- tunnel resistance
- 1 Introduction: What is
- condition for
- 2.5 Minimum Tunnel Resistance
- minimum
- 2.5 Minimum Tunnel Resistance
- tunneling
- 2.4 Tunneling
- a stochastic process
- 3.2 Tunneling: a Stochastic
- macroscopic
- 2.9 Co Tunneling
- space correlated
- 2.8 Single Electron Transistor
- space-correlated
- 2.7 The Double Tunnel
- theory of single electron
- 2 Theory of Single
- uniformly distributed PRN
- 4.2.3 Random Number Generator
- user interface
- 4.2 Code structure
- voltage-controlled voltage source
- Voltage-Controlled Voltage Sources
- work done by voltage source
- 3.1.3 Work of Voltage
- work done by voltage sources
- 2.2 Work Done by
- work function
- Material Properties
- write error
- Read/Write Errors and Access
Christoph Wasshuber