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Dissertation T. Windbacher
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List of Tables
4.1
Comparison between the effective masses for the lowest ground subband obtained with fullband calculations [
3
], calculations from [
4
], and the two-band
k
.
p
model. Excellent agreement with the fullband calculations is achieved.
5.1
Parameters for the site-binding model commonly used for sensing
(
analog to the definition of
).
5.2.
Sensitivity of ISFET devices for different gate dielectrics.
6.1.
Parameters for the chosen phosphate buffer saline (PBS)[
5
].
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Dissertation T. Windbacher
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List of Figures
T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors