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2.3 Ferroelectric Gate Stacks
Ferroelectric materials are vital for a huge field of applications. In form of thin-films, ferroelectrics, or in a more general sense polar materials, have been exploited in RF devices, non-volatile memories, various sensors and actuators, and for tunable microwave devices[97].
The development of ferroelectric films dates back to the late s and early s triggered by progress in integrated silicon devices and thin film processing techniques raising interest in ferroelectric thin films for non-volatile memories[98,99,100].
Subsections
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T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors