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2.3 Ferroelectric Gate Stacks

Ferroelectric materials are vital for a huge field of applications. In form of thin-films, ferroelectrics, or in a more general sense polar materials, have been exploited in RF devices, non-volatile memories, various sensors and actuators, and for tunable microwave devices[97]. The development of ferroelectric films dates back to the late $ 1960$s and early $ 1970$s triggered by progress in integrated silicon devices and thin film processing techniques raising interest in ferroelectric thin films for non-volatile memories[98,99,100].



Subsections
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Next: 2.3.1 Ferroelectric Materials Up: 2. Gate Stack Overview Previous: 2.2.2 Local Strain

T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors