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List of Abbreviations and Acronyms


AC ... Alternating Current
API ... Application Programming Interface
ASCII ... American Standard Code for Information Interchange
BCA ... Binary Collision Approximation
CM ... Center of Mass
CMOS ... Complementary MOS
CMP ... Chemical Mechanical Polishing
CPU ... Central Processing Unit
CVD ... Chemical Vapor Deposition
DC ... Direct Current
DFT ... Density Functional Theory
DIBL ... Drain-Induced Barrier Lowering
EOT ... Equivalent Oxide Thickness
FCC ... Face-Centered Cubic
Ge-on-Si ... Germanium on Silicon
GIDL ... Gate-Induced Drain Leakage
HCI ... Hot Carrier Injection
IBM ... International Business Machines Inc.
IC ... Integrated Circuit
IRW ... Integrated Reliability Workshop
IT ... Information Technology
ITRS ... International Technology Roadmap for Semiconductors
LAT ... Large Angle Tilt
LDD ... Lightly Doped Drain
MOS ... Metal Oxide Semiconductor
MOSFET ... MOS Field-Effect Transistor
MPI ... Message Passing Interface
n-MOS ... n-Channel MOS Transistor
NAND ... Not AND
NBT ... Negative Bias Temperature
NBTI ... Negative Bias Temperature Instability
NIR ... Near Infrared



OpenMP ... Open Multi Processing
PC ... Personal Computer
p-MOS ... p-Channel MOS Transistor
PhD ... Doctor of Philosophy
PVD ... Physical vapor deposition
R-D ... Reaction-Diffusion
RTA ... Rapid Thermal Annealing
SiGe ... Silicon-Germanium
SoC ... System on a Chip
SILC ... Stress-Induced Leakage Current
SIMS ... Secondary Ion Mass Spectrometry
SIMOX ... Separation by Implantation of Oxygen
SNM ... Static Noise Margin
SOI ... Silicon on Insulator
SRAM ... Static Random-Access Memory
STI ... Shallow Trench Isolation
TCAD ... Technology Computer-Aided Design
ULSI ... Ultra Large Scale Integration
WSS ... Wafer State Server
ZBL ... Ziegler Biersack Littmark


next up previous contents
Next: 1. Introduction Up: Dissertation Robert Wittmann Previous: Contents

R. Wittmann: Miniaturization Problems in CMOS Technology: Investigation of Doping Profiles and Reliability