Activities
Erasmus Langer
Siegfried Selberherr
Preface
Elaf Al-Ani
Surface Construction and Modification
Tesfaye Ayalew
Numerical Simulation of Wide Bandgap Semiconductor Devices
Hajdin Ceric
Development of an Interconnect Reliability Tool
Martin Della Mea
Micro-Electromechanical Systems
Siddhartha Dhar
Modeling and Simulation of Strained Si CMOS Transistors
Robert Entner
Three-Dimensional Device Simulation Including Quantum Correction Models
Andreas Gehring
Modeling of Leakage, Wearout, and Breakdown of Gate Dielectrics
Klaus-Tibor Grasser
Macroscopic Transport Models Sub-100 nm Semiconductor Devices
René Heinzl
Three-Dimensional Analytical Simulation of Ion Implantation
Clemens Heitzinger
Three-Dimensional Topography Simulation on the Feature Scale
Christian Hollauer
Three-Dimensional Simulation of Thermal Oxidation of Silicon
Stefan Holzer
Optimization and Inverse Modeling in TCAD Applications
Andreas Hössinger
Full Three-Dimensional Process Simulation
Gerhard Karlowatz
Full-Band Monte Carlo Device Simulation
Robert Kosik
The Numerics of Higher Order Moment Methods for Device Simulation
Hans Kosina
Modeling of Strain Effects and Quantum Devices
Alexandre Nentchev
Three-Dimensional Interconnect Simulation
Vassil Palankovski
Analysis and Simulation of Heterostructure Devices
Mahdi Pourfath
Three-Dimensional Simulation of Carbon Nanotube Transistors
Philipp Schwaha
Higher Order Moment Transport Models with Quantum Corrections
Alireza Sheikoleslami
A General Three-Dimensional Topography Simulator for Deposition and Etching Processes
Viktor Sverdlov
The Wigner Monte Carlo Method for Semiconductor Device Simulation
Stephan Enzo Ungersböck
Self-Consistent Simulation of Universal Mobility in Strained Si MOSFETs
Stephan Wagner
Simulation of Advanced RF Devices
Wilfried Wessner
Three-Dimensional Mesh Adaption
Robert Wittmann
Monte Carlo Simulation of Ion Implantation in Relaxed SiGe
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