Papers in Conference Proceedings |
[V48] S. Wagner, T. Grasser, S. Selberherr:
"Mixed-Mode Device and Circuit Simulation";
Presentation: Internationale Photonics Conference, Szczecin, Poland (invited); 06-24-2004 - 06-26-2004; in: "Proceedings of the 11th International Conference Mixed Design of Integrated Circuits and Systems MIXDES", (2004), 83-919289-7-7; 36 - 41.
[V47] V.
Palankovski, S. Selberherr:
"Analysis
of High Speed Heterostructure Devices";
Presentation: International Conference
on Microelectronics (MIEL), Nis (invited);
05-16-2004
- 05-19-2004; in: "Proc. 24th International
Conference on Microelectronics Vol 1",
(2004), 0-7803-8166-1; 115 - 122.
[V46] A.
Sheikholeslami, C. Heitzinger, T. Grasser,
S. Selberherr:
"Three-Dimensional
Topography Simulation for Deposition and
Etching Processes Using a Level Set Method";
Presentation: International Conference
on Microelectronics (MIEL), Nis; 05-16-2004
- 05-19-2004; in: "Proc. 24th International
Conference on Microelectronics Vol 1",
(2004), 0-7803-8166-1; 241 - 244.
[V45] R.
Entner, A. Gehring, T. Grasser, S. Selberherr:
"A
Comparison of Quantum Correction Models for
the Three-Dimensional Simulation of FinFET
Structures";
Poster: Intl. Spring Seminar on Electronics
Technology, Sofia; 05-13-2004 - 05-16-2004;
in: "Proc. IEEE Intl. Spring Seminar on
Electronics Technology", (2004),
0-7803-8422-9; 19 - 20.
[V44] R.
Kosik, T. Grasser, K. Dragosits:
"On
the Highest Order Moment Closure Problem";
Poster: Intl. Spring Seminar on Electronics
Technology, Sofia; 05-13-2004 - 05-16-2004;
in: "Proc. IEEE Intl. Spring Seminar on
Electronics Technology", (2004),
0-7803-8422-9; 20.
[V43] V.
Palankovski, S. Selberherr:
"Numerical
Simulation of Selected Semiconductor Devices";
Presentation: Intl. Spring Seminar on Electronics
Technology, Sofia; 05-13-2004 - 05-16-2004;
in: "Proc. IEEE Intl. Spring Seminar on
Electronics Technology", (2004),
0-7803-8422-9; 21.
[V42] A.
Sheikholeslami, C. Heitzinger, F. Badrieh,
H. Puchner, S. Selberherr:
"Three-Dimensional
Topography Simulation Based on a Level Set
Method";
Presentation: Intl. Spring Seminar on Electronics
Technology, Sofia; 05-13-2004 - 05-16-2004;
in: "Proc. IEEE Intl. Spring Seminar on
Electronics Technology", (2004),
0-7803-8422-9; 47.
[V41] S.
Holzer, A. Sheikholeslami, S. Wagner, C. Heitzinger,
T. Grasser, S. Selberherr:
"Optimization
and Inverse Modeling for TCAD Applications";
Presentation: SNDT 2004, Symposium on Nano
Device Technology 2004, Hsinchu, Taiwan;
05-12-2004 - 05-13-2004; in: "SNDT 2004,
Symposium on Nano Device Technology 2004",
(2004), 113 - 116.
[V40] H.
Kosina, V. Palankovski:
"Mobility
Enhancement in Strained CMOS Devices";
Presentation: SNDT 2004, Symposium on Nano
Device Technology 2004, Hsinchu, Taiwan
(invited); 05-12-2004 - 05-13-2004; in: "SNDT 2004,
Symposium on Nano Device Technology 2004",
(2004), 101 - 105.
[V39] E.
Ungersböck, M Pourfath, A. Gehring, H. Kosina,
B.-H. Cheong, S. Selberherr:
"Optimization
of Carbon Nanotube Field Effect Transistors";
Presentation: SNDT 2004, Symposium on Nano
Device Technology 2004, Hsinchu, Taiwan;
05-12-2004 - 05-13-2004; in: "SNDT 2004,
Symposium on Nano Device Technology 2004",
(2004), 117 - 120.
[V38] C.
Heitzinger, A. Sheikholeslami, J. Fugger,
O. Häberlen, M. Leicht, S. Selberherr:
"A Case Study in Predictive Three-Dimensional
Topography Simulation Based on a Level-Set
Algorithm";
Presentation: Meeting of the Electrochemical
Society, San Antonio, TX; 05-09-2004 -
05-13-2004; in: "Proc. 205th Meeting of the Electrochemical
Society (ECS)", (2004).
[V37] V.
Palankovski, S. Selberherr:
"Rigorous
Modeling of High-Speed Semiconductor Devices";
Presentation: Conf. on Electron Device and Sold-State Circuits, Hong Kong (invited);
12-16-2003 - 12-18-2003; in: "Proc. IEEE Conference on Electron Devices and
Solid-State Circuits EDSSC", (2003), 0-7803-7749-4; 127 - 132.
[V36] V.
Palankovski, S. Selberherr:
"Challenges
in Modeling of High-Speed Electron Devices";
Presentation: Intl. Workshop on the Physics
of Semiconductor Devices, Madras (invited);
12-16-2003 - 12-20-2003; in: "Proc. 12th
Intl. Workshop on Physics of Semiconductor
Devices", (2003), 81-7319-567-6;
45 - 50
[V35] E.
Ungersböck, A. Gehring, H. Kosina, S. Selberherr,
B.-H. Cheong, W. B. Choi:
"Analysis
of Carrier Transport in Carbon Nanotube FET
Devices";
Presentation: Intl. Workshop on the Physics
of Semiconductor Devices, Madras; 12-16-2003
- 12-20-2003; in: "Proc. Intl. Workhop
on Physics of Semiconductor Devices",
(2003), 81-7319-567-6; 1059 - 1061.
[V34] S.
Wagner, V. Palankovski, R. Quay, T. Grasser,
S. Selberherr:
"Numerical
Simulation of High-Speed High-Breakdown Indium
Phosphide HBTs ";
Presentation: Intl. Workshop on the Physics
of Semiconductor Devices, Madras; 12-16-2003
- 12-20-2003; in: "Proc. 12th Intl. Workshop
on The Physics of Semiconductor Devices",
(2003), 81-7319-567-6; 836 - 838.
[V33] T.
Grasser:
"Closure
Relations for Macroscopic Transport Models";
Presentation: Intl.Semiconductor Device
Research Symposium, Washington (invited);
12-10-2003
- 12-12-2003; in: "Proc. Intl. Semiconductor
Device Research Symp.", (2003),
0-7803-8139-4; 504 - 505.
[V32] V.
Palankovski, S. Wagner, S. Selberherr:
"Numerical
Analysis of Compound Semiconductor RF Devices";
Presentation: GaAs IC Symposium, San Diego
(invited); 11-09-2003 - 11-12-2003; in: "Proceedings
GaAs IC Symposium", (2003), 0-7803-7833-4;
107 - 110
[V31] S.
Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A
Generally Applicable Approach for Advanced
Equation Assembling";
Presentation: International Conference
on Software Engineering and Applications,
Marina
del Rey, CA; 11-03-2003 - 11-05-2003; in: "Proceedings
of the 7th IASTED International Conference
on Software Engineering and Applications
(SEA) ", (2003), 088-9863-94-6;
494 - 499.
[V30] S.
Wagner, T. Grasser, C. Fischer, S. Selberherr:
"Advanced
Equation Assembling Techniques for Numerical
Simulators";
Presentation: European Simulation and Modeling
Conference, Naples; 10-27-2003 - 10-29-2003;
in: "Proceedings of the 2003 European
Simulation and Modeling Conference",
(2003), 90-77381-04-X; 390 - 394.
[V29] S.
Wagner, T. Grasser, C. Fischer, S. Selberherr:
"A
Simulator Module for Advanced Equation Assembling";
Presentation: ESS Conf., Delft; 10-26-2003
- 10-29-2003; in: "Proceedings of the
15th European Simulation Symposium and Exhibition",
(2003), 3-936150-28-1; 55 - 64.
[V28] W.
Wessner, H. Ceric, C. Heitzinger, A. Hössinger,
S. Selberherr:
"Anisotropic
Mesh Adaption Governed by a Hessian Matrix
Metric";
Presentation: ESS Conf., Delft; 10-26-2003
- 10-29-2003; in: "Proceedings of the
15th European Simulation Symposium and Exhibition",
(2003), 3-936150-28-1; 41 - 46.
[V27] R.
Wittmann, A. Hössinger, S. Selberherr:
"Improvement
of the Statistical Accuracy for the Three-Dimensional
Monte Carlo Simulation of Ion Implantation";
Presentation: European Simulation Symposium,
Delft; 10-26-2003 - 10-29-2003; in: "Proc.
15th European Simulation Symposium",
(2003), 3-936150-28-1; 35 - 40.
[V26] F.
Jimenez-Molinos, A. Palma, A. Gehring, F. Gamiz,
H. Kosina, S. Selberherr:
"Static
and Transient Simulation of Inelastic Trap-Assisted
Tunneling";
Presentation: Workshop on Modeling and
Simulation of Electron Devices, Barcelona;
10-16-2003
- 10-17-2003; in: "Proc. MSED",
(2003), 84-688-1314-1; 65 - 68.
[V25] C.
Heitzinger, A. Sheikholeslami, F. Badrieh,
H. Puchner, S. Selberherr:
"Feature
Scale Simulation of Advanced Etching Processes";
Presentation: Meeting of the Electrochemical
Society, Orlando; 10-12-2003 - 10-16-2003;
in: "Proc. 204th Meeting of the Electrochemical
Society (ECS)", (2003), 1-56677-398-9;
1259.
[V24] J.
Cervenka, A. Hössinger, R. Minixhofer, T.
Grasser, S. Selberherr:
"Dreidimensionale
Modellierung Elektronischer Bauelemente";
Poster: ME 03 - Informationstagung Mikroelektronik,
Wien; 10-01-2003 - 10-02-2003; in: "Beiträge
der Informationstagung Mikroelektronik
2003",
(2003), 3-85133-030-7; 377 - 382.
[V23] A.
Sheikholeslami, C. Heitzinger, S. Selberherr,
F. Badrieh, H. Puchner:
"Capacitances
in the Backend of a 100nm CMOS Process and
their Predictive Simulation";
Poster: ME 03 - Informationstagung Mikroelektronik,
Wien; 10-01-2003 - 10-02-2003; in: "Beiträge
der Informationstagung Mikroelektronik
2003",
(2003), 3-85133-030-7; 481 - 486.
[V22] S.
Wagner, V. Palankovski, G. Röhrer, T. Grasser,
S. Selberherr:
"Numerische
Berechnung von Silizium-Germanium Heterostruktur-Bipolartransistoren";
Poster: ME 03 - Informationstagung Mikroelektronik,
Wien; 10-01-2003 - 10-02-2003; in: "Beiträge
der Informationstagung Mikroelektronik
2003",
(2003), 3-85133-030-7; 383 - 388.
[V21] W.
Wessner, A. Hössinger, S. Selberherr:
"Anisotropic
Mesh Refinement for Three-Dimensional Diffusion
Simulation";
Poster: ME 03 - Informationstagung Mikroelektronik,
Wien; 10-01-2003 - 10-02-2003; in: "Beiträge
der Informationstagung Mikroelektronik
2003",
(2003), 3-85133-030-7; 523 - 528.
[V20] S.
Holzer, R. Minixhofer, C. Heitzinger, J. Fellner,
T. Grasser, S. Selberherr:
"Extraction
of Material Parameters Based on Inverse Modeling
of Three-Dimensional Interconnect Structures";
Presentation: THERMINIC Workshop, Aix-en-Provence;
09-24-2003 - 09-26-2003; in: "Proceedings
9th THERMINIC Workshop", (2003),
2-848-130202; 263 - 268.
[V19] T.
Ayalew, J.M. Park, A. Gehring, T. Grasser,
S. Selberherr:
"Silicon
Carbide Accumulation-Mode Laterally Diffused
MOSFET";
Poster: ESSDERC, Estoril; 09-16-2003 -
09-18-2003; in: "Proceedings ESSDERC 2003",
(2003), 0-7803-7999-3; 581 - 584.
[V18] F.
Badrieh, H. Puchner, C. Heitzinger, A. Sheikholeslami,
S. Selberherr:
"From
Feature Scale Simulation to Backend Simulation
for a 100nm CMOS Process";
Poster: ESSDERC, Estoril; 09-16-2003 -
09-18-2003; in: "Proceedings ESSDERC 2003",
(2003), 0-7803-7999-3; 441 - 444.
[V17] A.
Gehring, S. Harasek, E. Bertagnolli, S. Selberherr:
"Evaluation
of ZrO2 Gate Dielectrics for Advanced CMOS
Devices";
Poster: ESSDERC, Estoril; 09-16-2003 -
09-18-2003; in: "Proceedings ESSDERC 2003",
(2003), 0-7803-7999-3; 473 - 476.
[V15] C.
Heitzinger, A. Sheikholeslami, J.M. Park, S.
Selberherr:
"A
Method for Generating Structurally Aligned
High Quality Grids and its Application to
the Simulation of a Trench Gate MOSFET";
Poster: ESSDERC, Estoril; 09-16-2003 -
09-18-2003; in: "Proceedings ESSDERC 2003",
(2003), 0-7803-7999-3; 457 - 460.
[V15] Ch.
Hollauer, H. Ceric, S. Selberherr:
"Simulation
of Thermal Oxidation: A Three-Dimensional
Finite Element Approach";
Presentation: ESSDERC, Estoril; 09-16-2003
- 09-18-2003; in: "Proceedings ESSDERC
2003", (2003), 0-7803-7999-3;
383 - 386.
[V14] R.
Minixhofer, S. Holzer, C. Heitzinger, J. Fellner,
T. Grasser, S. Selberherr:
"Optimization
of Electrothermal Material Parameters using
Inverse Modeling";
Presentation: ESSDERC, Estoril; 09-16-2003
- 09-18-2003; in: "Proceedings ESSDERC
2003", (2003), 0-7803-7999-3;
363 - 366.
[V13] E.
Ungersböck, A. Gehring, H. Kosina, S. Selberherr,
B.-H. Cheong, W. B. Choi:
"Simulation
of Carrier Transport in Carbon Nanotube Field
Effect Transistors";
Presentation: ESSDERC, Estoril; 09-16-2003
- 09-18-2003; in: "Proceedings ESSDERC
2003", (2003), 0-7803-7999-3;
411 - 414.
[V12] T.V.
Gurov, M. Nedjalkov, H. Kosina:
"Novel
Monte Carlo Algorithms for Ultrafast Transport
Phenomena in Semiconductors";
Presentation: Seminar on Monte Carlo Methods,
Berlin; 09-15-2003 - 09-19-2003; in: "Book
of Abstracts MCM-2003", (2003),
10.
[V11] H.
Kosina, M. Nedjalkov, S. Selberherr:
"Solution
of the Space-dependent Wigner Equation Using
a Particle Model ";
Presentation: Seminar on Monte Carlo Methods,
Berlin; 09-15-2003 - 09-19-2003; in: "Book
of Abstracts MCM-2003", (2003),
6.
[V10] M.
Nedjalkov, E. Atanassov, H. Kosina, S. Selberherr:
"Operator-Split
Method for Variance Reduction in Stochastic
Solutions of the Wigner Equation";
Presentation: Seminar on Monte Carlo Methods,
Berlin; 09-15-2003 - 09-19-2003; in: "Book
of Abstracts MCM-2003", (2003),
6
[V9] T.
Ayalew, J.M. Park, A. Gehring, T. Grasser,
S. Selberherr:
"Modeling
and Simulation of SiC MOSFETs";
Presentation: IASTED Intl. Conf. on Applied
Modelling and Simulation, Marbella; 09-03-2003
- 09-05-2003; in: "Proceedings IASTED",
(2003), 0-88986-384-9; 552 - 556.
[V8] K.
Dragosits, V. Palankovski, S. Selberherr:
"Mobility
Modeling in Presence of Quantum Effects";
Poster: SISPAD, Boston; 09-03-2003 - 09-05-2003;
in: "2003 Intl. Conf. on Simulation of
Semiconductor Processes and Devices",
(2003), 0-7803-7826-1; 271 - 274.
[V7] T.
Grasser, H. Kosina, S. Selberherr:
"Reformulation
of Macroscopic Transport Models Based on
the Moments of the Scattering Integral";
Presentation: SISPAD, Boston; 09-03-2003
- 09-05-2003; in: "2003 Intl. Conf. on
Simulation of Semiconductor Processes and
Devices", (2003), 0-7803-7826-1;
63 - 66.
[V6] A.
Hössinger, J. Cervenka, S. Selberherr:
"A
Multistage Smoothing Algorithm for Coupling
Cellular and Polygonal Datastructures";
Poster: SISPAD, Boston; 09-03-2003 - 09-05-2003;
in: "2003 Intl. Conf. on Simulation of
Semiconductor Processes and Devices",
(2003), 0-7803-7826-1; 259 - 262.
[V5] H.
Kosina, G. Klimeck, M. Nedjalkov, S. Selberherr:
"Comparison
of Numerical Quantum Device Models";
Presentation: SISPAD, Boston; 09-03-2003
- 09-05-2003; in: "2003 Intl. Conf. on
Simulation of Semiconductor Processes and
Devices", (2003), 0-7803-7826-1;
171 - 174.
[V4] S.
Smirnov, H. Kosina, S. Selberherr:
"Substrate
Orientation-Dependence of Electron Mobility
in Strained SiGe Layers";
Presentation: SISPAD, Boston; 09-03-2003
- 09-05-2003; in: "2003 Intl. Conf. on
Simulation of Semiconductor Processes and
Devices", (2003), 0-7803-7826-1;
55 - 58.
[V3] W.
Wessner, C. Heitzinger, A. Hössinger, S.
Selberherr:
"Error
Estimated Driven Anisotropic Mesh Refinement
for Three-Dimensional Diffusion Simulation";
Presentation: SISPAD, Boston; 09-03-2003
- 09-05-2003; in: "2003 Intl. Conf. on
Simulation of Semiconductor Processes and
Devices", (2003), 0-7803-7826-1;
109 - 112.
[V2] M.
Nedjalkov, H. Kosina, S. Selberherr:
"A
Quasi-Particle Model of the Electron - Wigner
Potential Interaction";
Poster: International Conference on Nonequilibrium
Carrier Dynamics in Semiconductors, Modena;
07-28-2003 - 08-01-2003; in: "Proceedings
HCIS-13", (2003), Th 5-1.
[V1] V.
Palankovski, S. Selberherr:
"Modeling
High Speed Semiconductor Devices of Modern
Communication Systems";
Presentation: World Multiconference on
Systemics, Cybernetics and Informatics,
Orlando; 07-27-2003
- 07-30-2003; in: "Proc. 7th World Multiconference
on Systemics, Cybernetics and Informatics",
(2003), 980-6560-01-9; 97 - 102.
|
Papers in Journals and Books |
[P28] T.
Grasser, H. Kosina, S. Selberherr:
"Hot Carrier Effects within Macroscopic Transport Models";
in: "Advanced Device Modeling and Simulation", World Scientific
Publishing Co., 2003, (invited), 9-812-38607-6, 173 - 201.
[P27] H.
Kosina, M. Nedjalkov:
"Particle Models for Device Simulation";
in: "Advanced Device Modeling and Simulation", T. Grasser (ed.);
World Scientific Publishing Co., Singapore, 2003, (invited), 9-812-38607-6,
27 - 69.
[P26] H.
Kosina, M. Nedjalkov, S. Selberherr:
"A Stable Backward Monte Carlo Method for the Solution of the Boltzmann Equation";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov,
J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3,
170 - 177.
[P25] M.
Nedjalkov, H. Kosina, S. Selberherr:
"A Weight Decomposition Approach to the Sign Problem in Wigner Transport
Simulations";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov,
J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3,
178 - 184.
[P24] S.
Smirnov, H. Kosina, M. Nedjalkov, S. Selberherr:
"A Zero Field Monte Carlo Algorithm Accounting for the Pauli Exclusion Principle";
in: "Large-Scale Scientific Computing", I. Lirkov, S. Margenov,
J. Wasniewski, P. Yalamov (ed.); Springer-Verlag, 2003, 3-540-21090-3,
185 - 193.
[P23] T.
Binder, C. Heitzinger, S. Selberherr:
"A
Study on Global and Local Optimization
Techniques for TCAD Analysis Tasks";
IEEE Trans. Computer-Aided Design
of Integrated Circuits and Systems, 23 (2004),
6; 814 - 822.
[P22] C.
Heitzinger, A. Hössinger, S. Selberherr:
"An
Algorithm for Smoothing Three-Dimensional
Monte Carlo Ion Implantation Simulation
Results";
Mathematics and Computers in Simulation, 66 (2004),
2-3; 219 - 230.
[P21] C.
Heitzinger, Ch. Ringhofer:
"A
Note on the Symplectic Integration
of the Nonlinear Schrödinger Equation";
J.Computational Electronics, 3 (2004),
1; 33 - 44.
[P20] C.
Heitzinger, S. Selberherr:
"On
the Simulation of the Formation and
Dissolution of Silicon Self-Interstitial
Clusters and the Corresponding Inverse
Modeling Problem";
Microelectronics Journal, 35 (2004), 2; 167 - 171.
[P19] J.M. Park, R. Klima, S. Selberherr:
"High-Voltage
Lateral Trench Gate SOI-LDMOSFETs";
Microelectronics Journal, 35 (2004), 3; 299 - 304.
[P18] M.
Nedjalkov, H. Kosina, E. Ungersböck,
S. Selberherr:
"A
Quasi-Particle Model of the Electron
Wigner Potential Interaction";
Semiconductor, Science and Technology, 19 (2004),
226 - 228.
[P17] V.
Palankovski, G. Röhrer, T. Grasser,
S. Smirnov, H. Kosina, S. Selberherr:
"Rigorous
Modeling Approach to Numerical Simulation
of SiGe HBTs";
Applied Surface Science, 224 (2004),
1-4; 361 - 364.
[P16] V.
Palankovski, S. Selberherr:
"The
State-of-the-Art in Simulation for Optimization of SiGe-HBTs";
Applied Surface Science, 224 (2004), 1-4; 312 - 319.
[15] S. Wagner, V. Palankovski, G. Röhrer, T. Grasser, S. Selberherr:
"Direct Extraction Feature for Scattering Parameters of SiGe-HBTs"";
Applied Surface Science, 224 (2004), 1-4; 365 - 369.
[P14] V.
Palankovski, S. Selberherr:
"Critical
Modeling Issues of SiGe Semiconductor
Devices";
Journal of Telecommunications and
Information Technology (invited), 1 (2004),
15 - 25.
[P13] V.
Palankovski, S. Selberherr:
"Rigorous Modeling of High-Speed
Semiconductor Devices";
Microelectronics Reliability (invited), 44 (2004),
6; 889 - 897.
[P12] J.M.
Park, S. Wagner, T. Grasser, S. Selberherr:
"New
SOI Lateral Power Devices with Trench
Oxide";
Solid-State Electronics, 48 (2004),
6; 1007 - 1015.
[P11] S.
Smirnov, H. Kosina:
"Monte
Carlo modeling of the electron mobility
in strained Si1-xGex layers
on arbitrarily oriented Si1-yGey substrates";
Solid-State Electronics (invited), 48 (2004),
1325 - 1335.
[P10] T.
Ayalew, A. Gehring, J.M. Park, T. Grasser,
S. Selberherr:
"Improving
SiC Lateral DMOSFET Reliability under
High Field Stress";
Microelectronics Reliability, 43 (2003),
9-11; 1889 - 1894.
[P9] A.
Gehring, F. Jimenez-Molinos, H. Kosina,
A. Palma, F. Gamiz, S. Selberherr:
" Modeling
of Retention Time Degradation Due to Inelastic Trap-Assisted Tunneling in EEPROM
Devices";
Microelectronics Reliability, 43 (2003), 9-11; 1495 - 1500.
[P8] V.
M. Borzdov, V. O. Galenchik, H. Kosina,
F. F. Komarov, O. G. Zhevnyak:
"Monte
Carlo Study of the Relative Frequency
of Scattering Processes in Si-Inversion
Layers";
Physics of Low-dimensional Structures, 5-6 (2003),
99 - 108.
[P7] A.
Gehring, H. Kosina, S. Selberherr:
"Analysis
of Gate Dielectric Stacks Using the
Transmitting Boundary Method";
J.Computational Electronics, 2 (2003),
2-4; 219 - 223.
[P6] H.
Kosina, M. Nedjalkov, S. Selberherr:
" A
Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations";
J.Computational Electronics, 2 (2003), 2-4; 147 - 151.
[P5]] C.
Heitzinger, A. Hössinger, S. Selberherr:
"On
Smoothing Three-Dimensional Monte
Carlo Ion Implantation Simulation
Results";
IEEE Trans. Computer-Aided Design, 22 (2003),
7; 879 - 883.
[P4] T.
Binder, A. Hössinger, S. Selberherr:
" Rigorous
Integration of Semiconductor Process and Device Simulators";
IEEE Trans. Computer-Aided Design, 22 (2003), 9; 1204 - 1214.
[P3] H.
Kosina, M. Nedjalkov:
"Particle
Models for Device Simulation";
International Journal of High Speed
Electronics and Systems (invited), 13 (2003),
13; 727 - 769.
[P2] T.
Grasser, H. Kosina, S. Selberherr:
" Hot
Carrier Effects within Macroscopic Transport Models";
International Journal of High Speed Electronics and Systems (invited), 13 (2003),
3; 873 - 901.
[P1] S.
Smirnov, H. Kosina, M. Nedjalkov, S.
Selberherr:
"Monte
Carlo Method for Modeling of Small
Signal Response Including the Pauli
Exclusion Principle";
Journal of Applied Physics, 94 (2003),
9; 5791 - 5799.
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[E4]
P. Pichler:
"Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon";
in: "Springer Series in Computational Microelectronics", S. Selberherr (ed.); Springer-Verlag, Wien - New York, 2004, 3-211-20687-6, 554 pages.
[E3] V. Palankovski,
R. Quay:
"Analysis and Simulation of Heterostructure Devices";
in: "Springer Series in Computational Microelectronics", S. Selberherr
(ed.); Springer-Verlag, Wien - New York, 2004, 3-211-40537-2, 300 pages.
[E2] T.
Grasser (ed.):
"Advanced Device Modeling and Simulation";
World Scientific Publishing Co., 2003, 9-812-38607-6; 210 pages.
[E1] R. Klima, S. Selberherr:
"Programmieren in C";
Springer-Verlag, Wien - New York, 2003, 3-211-40514-3; 354 pages.
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[T3] T.
Ayalew:
"SiC Semiconductor Devices Technology, Modeling, and Simulation";
Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik,
2004.
[T2] A. Gehring:
"Simulation of Tunneling in Semiconductor Devices";
Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik,
2003.
[T1] S.
Smirnov:
"Physical Modeling of Electron Transport in Strained Silicon and Silicon-Gemanium";
Reviewer: H. Kosina, K. Unterrainer; Institut für Mikroelektronik,
2003. |
[D4] M. Wagner:
"A Base Library for Full Band Monte Carlo Simulations";
Technische Universität Wien,
March 2004.
[D3]
A. Nentchev:
"Development of a Set-Up Software for the Global Trigger of the
CMS-Experiment at the LHC at CERN",
Technische Universität Wien,
February 2004.
[D2] R.
Entner:
"Three-Dimensional Device Simulation with MINIMOS-NT using the Wafer-State-Server";
Technische Universität Wien,
October 2003.
[D1] R.
Heinzl:
"A Three-Dimensional Analytical Ion Implantation tool using the Wafer-State-Server";
Technische Universität Wien,
October 2003.
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