Papers in Conference Proceedings Papers in Journals and Books Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V48] M. Karner, A. Gehring, S. Holzer, H. Kosina: "On the Efficient Calculation of Quasi-Bound States for the Simulation of Direct Tunneling"; Presentation: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-06-2005 - 06-10-2005; in: "5th International Conference on Large-Scale Scientific Computations", (2005), 33 - 34. [V47] H. Kosina, V. Sverdlov, Ch. Ringhofer, M. Nedjalkov, S. Selberherr: "Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator"; Presentation: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-06-2005 - 06-10-2005; in: "5th International Conference on Large-Scale Scientific Computations", (2005), 36 - 37. [V46] M. Nedjalkov, T.V. Gurov, H. Kosina, D. Vasileska, V. Palankovski: "Femtosecond Evolution of Spatially Inhomogeneous Carrier Excitations: Part I: Kinetic Approach"; Presentation: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-06-2005 - 06-10-2005; in: "5th International Conference on Large-Scale Scientific Computations", (2005), 46. [V45] M. Pourfath, J.M. Park, H. Kosina, S. Selberherr: "Fast Convergent Schrödinger-Poisson Solver for the Static and Dynamic Analysis of Carbon Nanotube Field Effect Transistors"; Presentation: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol; 06-06-2005 - 06-10-2005; in: "5th International Conference on Large-Scale Scientific Computations", (2005), 50 - 51. [V44] S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "A Physically-Based Electron Mobility Model for Strained Si Devices"; Presentation: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 13 - 16. [V43] R. Entner, A. Gehring, H. Kosina, T. Grasser, S. Selberherr: "Impact of Multi-Trap Assisted Tunneling on Gate Leakage of CMOS Memory Devices"; Presentation: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 45 - 48. [V42] S. Holzer, Ch. Hollauer, H. Ceric, S. Wagner, R. Entner, E. Langer, T. Grasser, S. Selberherr: "Three-Dimensional Transient Electro-Thermal Interconnect Simulation for Stress and Electromigration Analysis"; Poster: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 620 - 623. [V41] C. Jungemann, T. Grasser, B. Neinhüs, B. Meinerzhagen: "Failure of Macroscopic Transport Models in Nanoscale Devices near Equilibrium"; Presentation: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 25 - 28. [V40] M. Pourfath, A. Gehring, B.-H. Cheong, J.M. Park, H. Kosina, S. Selberherr: "Vertically Grown Coaxial Double Gate Carbon Nanotube Field Effect Transistors for Tera Level Integration"; Presentation: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN: 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 128 - 131. [V39] R. Wittmann, H. Puchner, L. Hinh, H. Ceric, A. Gehring, S. Selberherr: "Simulation of Dynamic NBTI Degradation for a 90 nm CMOS Technology"; Presentation: The Nanotechnology Conference and Trade Show, Anaheim; 05-08-2005 - 05-12-2005; in: "NSTI Nanotech Technical Proceedings", Vol. 3 (CDROM ISBN 0-9767985-4-9) (2005), ISBN: 0-9767985-2-2; 29 - 32. [V38] M. Pourfath, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "High Performance Carbon Nanotube Field Effect Transistor with the Potential for Tera Level Integration"; Presentation: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 04-07-2005 - 04-08-2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon Proceedings of the Conference", (2005), ISBN: 8890084707; 95 - 98. [V37] A. Sheikholeslami, E. Al-Ani, R. Heinzl, C. Heitzinger, F. Parhami, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr: "Level Set Method Based General Topography Simulator and its Application in Interconnect Processes"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), Bologna; 04-07-2005 - 04-08-2005; in: "ULIS 2005 6th International Conference on Ultimate Integration of Silicon", (2005), ISBN: 8890084707; 139 - 142. [V36] A. Gehring, V. Sverdlov, H. Kosina, S. Selberherr: "Quantum Transport in Ultra-Scaled Double-gate MOSFETs: A Wigner Function-based Monte Carlo Approach"; Presentation: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Granada; 01-19-2005 - 01-21-2005; in: "EUROSOI 2005 First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits", (2005), 71 - 72. [V35] H. Kosina, S. Selberherr: "Device Simulation Demands of Upcoming Microelectronic Devices"; Presentation: Advanced Workshop on Frontiers in Electronics (WOFE), Aruba (invited); 12-17-2004 - 12-22-2004; in: "Extended Abstracts of WOFE 2004", (2004), 6. [V34] V. Palankovski, S. Dhar, H. Kosina, S. Selberherr: "Improved Carrier Transport in Strained Si/Ge Devices"; Presentation: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 12-15-2004 - 12-18-2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages. [V33] S. Wagner, T. Grasser, S. Selberherr: "Physical Modeling of Semiconductor Devices for Microwave Applications"; Presentation: Asia Pacific Microwave Conference (APMC), New Delhi (invited); 12-15-2004 - 12-18-2004; in: "Asia Pacific Microwave Conference 2004. Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages. [V32] W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "Meshing Aspects on Three-Dimensional Fin-Fet Device Simulations"; Presentation: Asia Pacific Microwave Conference (APMC), New Delhi; 12-15-2004 - 12-18-2004; in: "Asia Pacific Microwave Conference 2004, Abstracts and Proceedings (CDROM)", (2004), ISBN: 81-7764-722-9; 4 pages. [V31] S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Modeling of Electron Mobility in Strained Si Devices"; Presentation: Semiconductor Advances for Future Electronics (SAFE), Veldhoven; 11-25-2004 - 11-26-2004; in: "Proceedings of SAFE 2004", Technology Foundation, Utrecht, (2004), ISBN: 90-73461-43-X; 4 pages. [V30] A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Presentation: International Caracas Conference on Devices, Circuits and Systems (ICCDCS), Punta Cana (invited); 11-03-2004 - 11-05-2004; in: "Proceedings of the ICCDCS 2004", (2004), ISBN: 0-7803-8777-5; 1 - 8. [V29] A. Gehring, H. Kosina: "Wigner-Function Based Simulation of Classic and Ballistic Transport in Scaled DG-MOSFETs Using the Monte Carlo Method"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette; 10-24-2004 - 10-27-2004; in: "International Workshop on Computational Electronics Abstracts", (2004), 227 - 228. [V28] A. Gehring, S. Selberherr: "Evolution of Current Transport Models for Engineering Applications"; Presentation: International Workshop on Computational Electronics (IWCE), West Lafayette; 10-24-2004 - 10-27-2004; in: "International Workshop on Computational Electronics Abstracts", (2004), 20 - 21. [V27] T. Grasser, R. Kosik, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Devices"; Presentation: International Workshop on Computational Electronics (IWCE), West Lafayette; 10-24-2004 - 10-27-2004; in: "International Workshop on Computational Electronics Abstracts", (2004), 36 - 37. [V26] C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "Efficient Simulation of the Full Coulomb Interaction in Three Dimensions"; Presentation: International Workshop on Computational Electronics (IWCE), West Lafayette; 10-24-2004 - 10-27-2004; in: "International Workshop on Computational Electronics Abstracts", (2004), 24 - 25. [V25] M. Pourfath, E. Ungersböck, A. Gehring, W. Park, B.-H. Cheong, H. Kosina, S. Selberherr: "Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors"; Poster: International Workshop on Computational Electronics (IWCE), West Lafayette; 10-24-2004 - 10-27-2004; in: "International Workshop on Computational Electronics Abstracts", (2004), 237 - 238. [V24] A. Gehring, S. Selberherr: "Gate Leakage Models for Device Simulation"; Presentation: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing (invited); 10-18-2004 - 10-21-2004; in: "7th International Conference on Solid-State and Integrated Circuits Technology Proceedings", R. Huang, M. Yu, J. Liou, T. Hiramoto, C. Claeys (ed.); IEEE Press, Volume II (2004), ISBN: 0-7803-8511-X; 971 - 976. [V23] C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "Accurate Three-Dimensional Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions"; Presentation: Meeting of the Electrochemical Society (ECS), Honolulu; 10-03-2004 - 10-08-2004; in: "Proc. 206th Meeting of the Electrochemical Society", (2004). [V22] R. Wittmann, A. Hössinger, S. Selberherr: "Calibration for the Monte Carlo Simulation of Ion Implantation in Relaxed SiGe"; Presentation: Meeting of the Electrochemical Society (ECS), Honolulu; 10-03-2004 - 10-08-2004; in: "SiGe: Materials, Processing, and Devices Proceedings of the First International Symposium", (2004), ISBN: 1-56677-420-9; 181 - 192. [V21] M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Improving the Ambipolar Behavior of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Presentation: European Solid-State Device Research Conference (ESSDERC), Leuven; 09-21-2004 - 09-23-2004; in: "Proceeding of the 34th European Solid-State Device Research Conference", Institute of Electrical and Electronics Engineers, (2004), ISBN: 0780384784; 429 - 432. [V20] C. Heitzinger, Ch. Ringhofer, S. Ahmed, D. Vasileska: "On the Efficient Simulation of Electron-Electron Interactions in Nanoscale MOSFETs"; Poster: Trends in Nanotechnology Conference (TNT), Segovia; 09-13-2004 - 09-17-2004; in: "Proceedings Trends in Nanotechnology 2004", (2004). [V19] M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, W. Park, H. Kosina, S. Selberherr: "Optimization of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Presentation: Nano and Giga Challenges in Microelectronics (NGCM), Krakau; 09-13-2004 - 09-17-2004; in: "Nano and Giga Challenges in Microelectronics Book of Abstracts", (2004), 201. [V18] T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Ionization Level of Impurities in α-SiC Devices"; Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 295 - 298. [V17] H. Ceric, R. Sabelka, S. Holzer, W. Wessner, S. Wagner, T. Grasser, S. Selberherr: "The Evolution of the Resistance and Current Density During Electromigration"; Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 331 - 334. [V16] A. Gehring, S. Selberherr: "On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 25 - 28. [V15] T. Grasser, C. Jungemann, H. Kosina, B. Meinerzhagen, S. Selberherr: "Advanced Transport Models for Sub-Micrometer Devices"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München (invited); 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 1 - 8. [V14] T. Grasser, H. Kosina, S. Selberherr: "On the Validity of the Relaxation Time Approximation for Macroscopic Transport Models"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 109 - 112. [V13] A. Hössinger, R. Minixhofer, S. Selberherr: "Full Three-Dimensional Analysis of a Non-Volatile Memory Cell"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 129 - 132. [V12] H. Kosina: "Advanced Transport Models for Nanodevices"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München (invited); 09-02-2004 - 09-04-2004; in: "From Sub-μm-CMOS to Nanotechnology SISPAD 2004 Companion Workshop", (2004), 35. [V11] M. Pourfath, E. Ungersböck, A. Gehring, B.-H. Cheong, H. Kosina, S. Selberherr: "Three-Dimensional Analysis of Schottky Barrier Carbon Nanotube Field Effect Transistors"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 149 - 152. [V10] S. Wagner, T. Grasser, S. Selberherr: "Performance Evaluation of Linear Solvers Employed for Semiconductor Device Simulation"; Poster: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 351 - 354. [V9] W. Wessner, Ch. Hollauer, A. Hössinger, S. Selberherr: "Anisotropic Laplace Refinement for Three-Dimensional Oxidation Simulation"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 165 - 168. [V8] R. Wittmann, A. Hössinger, S. Selberherr: "Monte Carlo Simulation of Ion Implantation in Silicon-Germanium Alloys"; Presentation: International Conference on the Simulation of Semiconductor Processes and Devices (SISPAD), München; 09-02-2004 - 09-04-2004; in: "Simulation of Semiconductor Processes and Devices 2004", Springer, (2004), ISBN: 3211224688; 169 - 172. [V7] T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Accurate Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 08-31-2004 - 09-04-2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 92 - 93. [V6] T. Ayalew, S. Kim, T. Grasser, S. Selberherr: "SiC Power Rectifier With Improved Switching Performance "Numerical Analysis of Merged PiN Schottky Diode""; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 08-31-2004 - 09-04-2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 476 - 477. [V5] T. Ayalew, S. Wagner, T. Grasser, S. Selberherr: "Numerical Simulation of Microwave MESFETs in 4H-SiC Fabricated Using Epitaxial Layers on Semi-Insulating Substrates"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 08-31-2004 - 09-04-2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 76 - 77. [V4] S.-C. Kim, W. Bahng, N.-K. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Poster: European Conference on Silicon Carbide and Related Materials (ECSCRM), Bologna; 08-31-2004 - 09-04-2004; in: "5th European Conference on Silicon Carbide and Related Materials Book of Abstracts", (2004), 492 - 493. [V3] S. Wagner, T. Grasser, C. Fischer, S. Selberherr: "Concepts and Implementation of an Advanced Equation Assembly Module"; Presentation: World Multiconference on Systemics, Cybernetics and Informatics (SCI), Orlando; 07-18-2004 - 07-21-2004; in: "The 8th World Multi-Conference on Systemics, Cybernetics and Informatics", (2004), ISBN: 980-6560-13-2; 150 - 155. [V2] A. Gehring, S. Selberherr: "Modeling of Wearout, Leakage, and Breakdown of Gate Dielectrics"; Presentation: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Hsinchu; 07-05-2004 - 07-08-2004; in: "11th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2004), ISBN: 0-7803-8454-7; 61 - 64. [V1] S. Wagner, T. Grasser, S. Selberherr: "Benchmarking Linear Solvers with Semiconductor Simulation Examples"; Presentation: International Conference on Scientific and Engineering Computation (ICSEC), Singapore; 06-30-2004 - 07-02-2004; in: "Proc. Intl. Conf. on Scientific & Engineering Computation (ICSEC)", (2004). Papers in Journals and Books [P10] T. Grasser: "Closure relations for macroscopic transport models in semiconductor device simulation"; in: "Recent Research Developments in Applied Physics Vol. 7 - 2004 Part II", issued by: S.G. Pandalai; Transworld Research Network, 2004, 81-7895-156-8, 423 - 446. [P9] R. Sabelka, C. Harlander, S. Selberherr: "Interconnects and Propagation of High Frequency Signals"; in: "Predictive Simulation of Semiconductor Processing", J. Dabrowski, E. Weber (ed.); Springer, 2004, ISBN: 3-540-20481-4, 357 - 385. [P8] T. Ayalew, T. Grasser, H. Kosina, S. Selberherr: "Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC Devices"; Materials Science Forum, 483-485 (2005), 845 - 848. [P7] T. Ayalew, S.-C. Kim, T. Grasser, S. Selberherr: "Numerical Analysis of SiC Merged PiN Schottky Diodes"; Materials Science Forum, 483-485 (2005), 949 - 952. [P6] S. Dhar, H. Kosina, V. Palankovski, E. Ungersböck, S. Selberherr: "Electron Mobility Model for Strained-Si Devices"; IEEE Transactions on Electron Devices, 52 (2005), 4; 527 - 533. [P5] A. Gehring, S. Selberherr: "Gate Current Modeling for MOSFETs"; Journal of Computational and Theoretical Nanoscience, 2 (2005), 1; 26 - 44. [P4] T. Grasser: "Non-Parabolic Macroscopic Transport Models for Semiconductor Device Simulation"; Physica A, 349 (2005), 221 - 258. [P3] S.-C. Kim, W. Bahng, N.-K. Kim, E.-D. Kim, T. Ayalew, T. Grasser, S. Selberherr: "Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabrication"; Materials Science Forum, 483-485 (2005), 793 - 796. [P2] M. Pourfath, A. Gehring, E. Ungersböck, H. Kosina, S. Selberherr, B.-H. Cheong, W. Park: "Separated carrier injection control in carbon nanotube field-effect transistors"; Journal of Applied Physics, 97 (2005), 10; 1061031 - 1061033. [P1] T. Ayalew, A. Gehring, T. Grasser, S. Selberherr: "Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge Termination"; Microelectronics Reliability, 44 (2004), 9-11; 1473 - 1478. Doctoral Theses [T5] S. Wagner: "Small-Signal Device and Circuit Simulation"; Reviewer: T. Grasser, E. Bertagnolli; Institut für Mikroelektronik, 2005. [T4] H. Ceric: "Numerical Techniques in Interconnect and Process Simulations"; Reviewer: S. Selberherr, H. Haas; Institut für Mikroelektronik, 2005. [T3] J. Cervenka: "Three-Dimensional Mesh Generation for Device and Process Simulation"; Reviewer: T. Grasser, H. Haas; Institut für Mikroelektronik, 2004. [T2] R. Kosik: "Numerical Challenges on the Road to NanoTCAD"; Reviewer: T. Grasser, C. Schmeiser; Institut für Mikroelektronik, 2004. [T1] J. M. Park: "Novel Power Devices for Smart Power Applications"; Reviewer: S. Selberherr, E. Bertagnolli; Institut für Mikroelektronik, 2004. Master's Theses [D2] M. Karner: "Multi-Dimensional Simulation of Closed Quantum Systems"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004. [D1] M. Spevak: "Simulation of Rotationally Symmetric Semiconductor Devices"; Supervisor: T. Grasser, A. Gehring; Institut für Mikroelektronik, 2004. Bachelor's Theses [B8] M. Brandl: "Gravitation von Massenpunkten in der Ebene"; Institut für Mikroelektronik, 2005. [B7] B. Brauner: "Elektromigration"; Institut für Mikroelektronik, 2005. [B6] D. Dzombic: "Berechnung der effektiven Massen von Silizium in allgemeinen Kristallebenen"; Institut für Mikroelektronik, 2005. [B5] L. Pilat: "Numerische Simulation nichtlinearer Diffusion"; Institut für Mikroelektronik, 2005. [B4] E. Hinterberger: "Numerische Lösung parabolischer Differentialgleichungen"; Institut für Mikroelektronik, 2005. [B3] G. Hauer: "Vergleich von numerischen Iterationsverfahren zur Nullstellenbestimmung"; Institut für Mikroelektronik, 2005. [B2] T. Hartmann: "Das Faktorisierungsproblem und das Quadratische Sieb"; Institut für Mikroelektronik, 2005. [B1] Ch. Schwarz: "Multidimensionale Interpolation von tabellierten Datensätzen"; Institut für Mikroelektronik, 2004.
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