Activities Erasmus Langer Siegfried Selberherr Preface Bindu Balakrishna Compact Modeling of Negative Bias Temperature Instability Oskar Baumgartner Numerical Study of the Electron Subband Structure in Strained Silicon UTB Devices Hajdin Ceric Three Dimensional Simulation of Electromigration Induced Voids Johann Cervenka Three-Dimensional Device Simulation of a DotFET Otmar Ertl Development of a Level Set Framework for Topography Simulation Wolfgang Gös Impact of Quantum Effects on Charge Trapping in NBTI Klaus-Tibor Grasser A Two Stage Model for Bias Temperature Instability Philipp Hehenberger Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation René Heinzl An Algebraic Topology Library Hans Kosina Physical Modeling of Semiconductor Nanostructures Goran Milovanovic Quantum Cascade Lasers Neophytos Neophytou Modeling of Nanoscale Devices for Electronic and Thermoelectric Applications Roberto Orio The Effect of Microstructure on Electromigration Vassil Palankovski Analysis and Simulation of Advanced Heterostructure Devices Mahdi Pourfath Analysis and Simulation of Graphene Nanoribbon Devices Karl Rupp The Finite Element Method in Multiphysics Problems and Semiconductor Equations Franz Schanovsky Atomistic Defect-Modeling in Gate Oxides Philipp Schwaha Scattering Induced Wigner Corrections Ivan Starkov The Modeling of Hot Carrier Reliability Franz Stimpfl Parallel Multi-Segment Mesh Generation Viktor Sverdlov Electron Subband Structure and Transport Enhancement in Strained Silicon Films and Surface Layers Oliver Triebl Hot Carrier Reliability Issues in High-Voltage and Power Semiconductor Devices Stanislav Tyaginov Impact of the Surrounding Network on the Si-O Bond-Breakage Energetics Martin-Thomas Vasicek Advanced Macroscopic Transport Models Stanislav Vitanov Simulation of Novel Heterostructure Field-Effect Transistors Paul-Jürgen Wagner Negative Bias Temperature Stress and Flicker Noise Thomas Windbacher Biologically Sensitive Field-Effect Transistors
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