• [BK-2] M. Pourfath:
  "The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation";
  S. Selberherr (ed); Springer-Verlag, Wien - New York, (2014), ISBN: 978-3-7091-1800-9, 256 pages doi:10.1007/978-3-7091-1800-9.
  
  
• [BK-1] T. Grasser:
  "Bias Temperature Instability for Devices and Circuits";
  Springer Science+Business Media New York, (2013), ISBN: 978-1-4614-7908-6, 810 pages doi:10.1007/978-1-4614-7909-3.
  
  

• [PJ-41] S. Amoroso, L. Gerrer, M. Nedjalkov, R. Hussin, C. Alexander, A. Asenov:
  "Modelling Carriers Mobility in Nano-MOSFETs in the Presence of Discrete Trapped Charges: Accuracy and Issues";
  IEEE Transactions on Electron Devices, 61 (2014), 1292 - 1298 doi:10.1109/TED.2014.2312820.
  
  
• [PJ-40] N. Djavid, K. Khaliji, S. M. Tabatabaei, M. Pourfath:
  "A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene Nanoribbons";
  IEEE Transactions on Electron Devices, 61 (2014), 23 - 29 doi:10.1109/TED.2013.2290773.
  
  
• [PJ-39] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
  "Methods of Simulating Thin Film Deposition Using Spray Pyrolysis Techniques";
  Microelectronic Engineering, 117 (2014), 57 - 66 doi:10.1016/j.mee.2013.12.025.
  
  
• [PJ-38] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
  "Modeling the Growth of Tin Dioxide Using Spray Pyrolysis Deposition for Gas Sensor Applications";
  IEEE Transactions on Semiconductor Manufacturing, 27 (2014), 269 - 277 doi:10.1109/TSM.2014.2298883.
  
  
• [PJ-37] N. Ghobadi, M. Pourfath:
  "A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures";
  IEEE Transactions on Electron Devices, 61 (2014), 186 - 192 doi:10.1109/TED.2013.2291788.
  
  
• [PJ-36] J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
  Journal of Applied Physics, 115 (2014), 17C503-1 - 17C503-3 doi:10.1063/1.4856056.
  
  
• [PJ-35] Yu.Yu. Illarionov, M. Bina, S. E. Tyaginov, T. Grasser:
  "An Analytical Approach for the Determination of the Lateral Trap Position in Ultra-Scaled MOSFETs";
  Japanese Journal of Applied Physics, 53 (2014), 04EC22-1 - 04EC22-4 doi:10.7567/JJAP.53.04EC22.
  
  
• [PJ-34] Yu.Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
  "Electrical and Optical Characterization of Au/CaF2/p-Si(111) Tunnel-Injection Diodes";
  Journal of Applied Physics, 115 (2014), 223706-1 - 223706-5 doi:10.1063/1.4882375.
  
  
• [PJ-33] H. Karamitaheri, N. Neophytou, H. Kosina:
  "Anomalous Diameter Dependence of Thermal Transport in Ultra-Narrow Si Nanowires";
  Journal of Applied Physics, 115 (2014), 024302_1 - 024302_7 doi:10.1063/1.4858375.
  
  
• [PJ-32] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates";
  Advanced Materials Research - Print/CD, 854 (2014), 89 - 95 doi:10.4028/www.scientific.net/AMR.854.89.
  
  
• [PJ-31] A. Makarov, V. Sverdlov, S. Selberherr:
  "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
  Future Information Engineering, 1 (2014), 391 - 398 doi:10.2495/ICIE130451.
  
  
• [PJ-30] M. Molnar, D. Donoval, J. Kuzmik, J. Marek, A. Chvala, P. Pribytny, V. Mikolasek, K. Rendek, V. Palankovski:
  "Simulation Study of Interface Traps and Bulk Traps in n++GaN/InAlN/AlN/GaN High Electron Mobility Transistors";
  Applied Surface Science, 312 (2014), 157 - 161 doi:10.1016/j.apsusc.2014.04.078.
  
  
• [PJ-29] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Acoustic Phonon and Surface Roughness Spin Relaxation Mechanisms in Strained Ultra-Scaled Silicon Films";
  Advanced Materials Research - Print/CD, 854 (2014), 29 - 34 doi:10.4028/www.scientific.net/AMR.854.29.
  
  
• [PJ-28] G. Pobegen, T. Aichinger, A. Salinaro, T. Grasser:
  "Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs";
  Materials Science Forum, 778-780 (2014), 959 - 962 doi:10.4028/www.scientific.net/MSF.778-780.959.
  
  
• [PJ-27] F. Rudolf, J. Weinbub, K. Rupp, S. Selberherr:
  "The Meshing Framework ViennaMesh for Finite Element Applications";
  Journal of Computational and Applied Mathematics, 270 (2014), 166 - 177 doi:10.1016/j.cam.2014.02.005.
  
  
• [PJ-26] J. M. Sellier, S. Amoroso, M. Nedjalkov, S. Selberherr, A. Asenov, I. Dimov:
  "Electron Dynamics in Nanoscale Transistors by Means of Wigner and Boltzmann Approaches ";
  Physica A, 398 (2014), 194 - 198 doi:10.1016/j.physa.2013.12.045.
  
  
• [PJ-25] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "A Benchmark Study of the Wigner Monte Carlo Method";
  Monte Carlo Methods and Applications, 20 (2014), 43 - 51 doi:10.1515/mcma-2013-0018.
  
  
• [PJ-24] J. Weinbub, K. Rupp, S. Selberherr:
  "Highly Flexible and Reusable Finite Element Simulations with ViennaX";
  Journal of Computational and Applied Mathematics, 270 (2014), 484 - 495 doi:10.1016/j.cam.2013.12.013.
  
  
• [PJ-23] T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Novel Bias-Field-Free Spin Transfer Oscillator";
  Journal of Applied Physics, 115 (2014), 17C901-1 - 17C901-3 doi:10.1063/1.4862936.
  
  
• [PJ-22] S. Wolf, N. Neophytou, H. Kosina:
  "Thermal Conductivity of Silicon Nanomeshes: Effects of Porosity and Roughness";
  Journal of Applied Physics, 115 (2014), 204306 - 204313.
  
  
• [PJ-21] T. Aichinger, M. Nelhiebel, T. Grasser:
  "Refined NBTI Characterization of Arbitrarily Stressed PMOS Devices at Ultra-Low and Unique Temperatures";
  Microelectronics Reliability, 53 (2013), 937 - 946 doi:10.1016/j.microrel.2013.03.007.
  
  
• [PJ-20] O. Baumgartner, Z. Stanojevic, K. Schnass, M. Karner, H. Kosina:
  "VSP - A Quantum-Electronic Simulation Framework";
  Journal of Computational Electronics, 12 (2013), 701 - 721 doi:10.1007/s10825-013-0535-y.
  
  
• [PJ-19] V. V. A. Camargo, B. Kaczer, G. Wirth, T. Grasser, G. Groeseneken:
  "Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits";
  IEEE Transactions on Very Large Scale Integration (VLSI) Systems, PP (2013) doi:10.1109/TVLSI.2013.2240323.
  
  
• [PJ-18] D. Demidov, K. Ahnert, K. Rupp, P. Gottschling:
  "Programming CUDA and OpenCL: A Case Study Using Modern C++ Libraries";
  SIAM Journal on Scientific Computing, 35 (2013), 453 - 472 doi:10.1137/120903683.
  
  
• [PJ-17] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Seinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
  "A Method for Simulating Spray Pyrolysis Deposition in the Level Set Framework";
  Engineering Letters, 21 (invited), 224 - 240 doi:10.1016/j.mee.2013.02.083.
  
  
• [PJ-16] J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, Ph. J. Roussel, L. Witters, T. Grasser, G Groeseneken:
  "NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric Stack";
  IEEE Transactions on Device and Materials Reliability, 13 (invited), 497 - 506 doi:10.1109/TDMR.2013.2281731.
  
  
• [PJ-15] Yu.Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, N. S. Sokolov:
  "Light Emission from the Au/CaF2/p-Si(111) Capacitors: Evidence for an Elastic Electron Tunneling through a Thin (1-2 nm) Fluoride Layer";
  Thin Solid Films, 545 (2013), 580 - 583 doi:10.1016/j.tsf.2013.07.050.
  
  
• [PJ-14] H. Karamitaheri, N. Neophytou, H. Kosina:
  "Use of Atomistic Phonon Dispersion and Boltzmann Transport Formalism to Study the Thermal Conductivity of Narrow Si Nanowires";
  Journal of Electronic Materials, 1 (2013), 1 - 8 doi:10.1007/s11664-013-2884-5.
  
  
• [PJ-13] K. Khaliji, M. Noei, S. M. Tabatabaei, M. Pourfath, M. Fathipour, Y. Abdi:
  "Tunable Bandgap in Bilayer Armchair Graphene Nanoribbons: Concurrent Influence of Electric Field and Uniaxial Strain";
  IEEE Transactions on Electron Devices, 60 (2013), 2464 - 2470 doi:10.1109/TED.2013.2266300.
  
  
• [PJ-12] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits";
  IEEE Transactions on Magnetics, 49 (2013), 5620 - 5628 doi:10.1109/TMAG.2013.2278683.
  
  
• [PJ-11] N. Neophytou, H. Karamitaheri, H. Kosina:
  "Atomistic Calculations of the Electronic, Thermal, and Thermoelectric Properties of Ultra-Thin Si Layers";
  Journal of Computational Electronics, 12 (2013), 611 - 622 doi:10.1109/TED.2013.2262049.
  
  
• [PJ-10] N. Neophytou, H. Kosina:
  "Optimizing Thermoelectric Power Factor by Means of a Potential Barrier";
  Journal of Applied Physics, 114 (2013), 044315_1 - 044315-6 doi:10.1063/1.4816792.
  
  
• [PJ-9] N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci:
  "Power Factor Enhancement by Inhomogeneous Distribution of Dopants in Two-Phase Nanocrystalline Systems";
  Journal of Electronic Materials, 1 (2013), 1 - 9 doi:10.1007/s11664-013-2898-z.
  
  
• [PJ-8] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
  "Subband Spitting and Surface Roughness Induced Spin Relaxation in (001) Silicon SOI MOSFETs";
  Solid-State Electronics, 90 (2013), 34 - 38 doi:10.1016/j.sse.2013.02.055.
  
  
• [PJ-7] G. Pobegen, T. Grasser:
  "On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale";
  IEEE Transactions on Electron Devices, 60 (2013), 2148 - 2155 doi:10.1109/TED.2013.2264816.
  
  
• [PJ-6] G. Pobegen, M. Nelhiebel, S. de Filippis, T. Grasser:
  "Accurate High Temperature Measurements Using Local Polysilicon Heater Structures";
  IEEE Transactions on Device and Materials Reliability, 99 (2013), 1 - 8 doi:10.1109/TDMR.2013.2265015.
  
  
• [PJ-5] G. Pobegen, S. E. Tyaginov, M. Nelhiebel, T. Grasser:
  "Observation of Normally Distributed Energies for Interface Trap Recovery After Hot-Carrier Degradation";
  IEEE Electron Device Letters, 34 (2013), 939 - 941 doi:10.1109/LED.2013.2262521.
  
  
• [PJ-4] P. Schwaha, D. Querlioz, P. Dollfus, J. Saint-Martin, M. Nedjalkov, S. Selberherr:
  "Decoherence Effects in the Wigner Function Formalism";
  Journal of Computational Electronics, 12 (2013), 388 - 396 doi:10.1007/s10825-013-0480-9.
  
  
• [PJ-3] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "Decoherence and Time Reversibility: The Role of Randomness at Interfaces";
  Journal of Applied Physics, 114 (2013), 174902-1 - 174902-7 doi:10.1063/1.4828736.
  
  
• [PJ-2] A. P. Singulani, H. Ceric, S. Selberherr:
  "Stress Evolution in the Metal Layers of TSVs with Bosch Scallops";
  Microelectronics Reliability, 53 (2013), 1602 - 1605 doi:10.1016/j.microrel.2013.07.132.
  
  
• [PJ-1] S. Touski, M. Pourfath:
  "Substrate Surface Corrugation Effects on the Electronic Transport in Graphene Nanoribbons";
  Applied Physics Letters, 103 (2013), 1435061 - 1435063 doi:10.1063/1.4824362.
  
  

• [BC-6] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
  "Modeling and Analysis of Spray Pyrolysis Deposited SnO2 Films for Gas Sensors";
  Transactions on Engineering Technologies; G.-C. Yang, S.-L. Ao, L. Gelman (ed); Springer, 2014, ISBN: 978-94-017-8831-1, 295 - 310 doi:10.1007/978-94-017-8832-8.
  
  
• [BC-5] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
  Proceedings of the 21st International Conference "Mixed Design of Integrated Circuits and Systems; A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 58 - 61.
  
  
• [BC-4] A. Makarov, V. Sverdlov, S. Selberherr:
  "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
  Future Information Engineering; G. Lee (ed); WITPRESS, 2014, ISBN: 978-1-84564-855-8, 391 - 398.
  
  
• [BC-3] P. Schwaha, M. Nedjalkov, S. Selberherr, J. M. Sellier, I. Dimov, R. Georgieva:
  "Stochastic Alternative to Newton's Acceleration";
  Large-Scale Scientific Computing; I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 178 - 185 doi:10.1007/978-3-662-43880-0_19.
  
  
• [BC-2] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "The Role of Annihilation in a Wigner Monte Carlo Approach";
  Large-Scale Scientific Computing; I. Lirkov, S. Margenov, J. Wasniewski (ed); Springer, 2014, ISBN: 978-3-662-43879-4, 186 - 193 doi:10.1007/978-3-662-43880-0_20.
  
  
• [BC-1] V. Sverdlov, H. Mahmoudi, A. Makarov, S. Selberherr:
  "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
  Proceedings of the 21st International Conference "Mixed Design of Integrated Circuits and Systems; A. Napieralski (ed); Department of Microelectronics and Computer Science, Lodz University of Technology, Poland, 2014, ISBN: 978-83-63578-04-6, 30 - 33.
  
  

• [CP-118] E. Bury, R. Degraeve, M. Cho, B. Kaczer, W. Goes, T. Grasser, N. Horiguchi, G. Groeseneken:
  "Study of (Correlated) Trap Sites in SILC, BTI and RTN in SiON and HKMG Device";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), 1 - 4.
  
  
• [CP-117] H. Ceric, S. Selberherr:
  "Electromigration Reliability of Solder Bumps";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), 340 - 343.
  
  
• [CP-116] L. Filipovic, R. Orio, S. Selberherr:
  "Effects of Sidewall Scallops on the Performance and Reliability of Filled Copper and Open Tungsten TSVs";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), 325 - 330.
  
  
• [CP-115] T. Grasser, K. Rott, H. Reisinger, M. Waltl, W. Goes:
  "Evidence for Defect Pairs in SiON pMOSFETs";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), 1 - 4.
  
  
• [CP-114] W. H. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
  "Electromigration Reliability of Open TSV Structures";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore; 30.06.2014 - 04.07.2014; in "Proceedings of the 21st International Symposium on the Physical and Failure Analysis of Integrated Circuits", (2014), 321 - 324.
  
  
• [CP-113] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Compact Modeling of Memristive IMP Gates for Reliable Stateful Logic Design";
  Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 26.
  
  
• [CP-112] V. Sverdlov, H. Mahmoudi, A. Makarov, T. Windbacher, S. Selberherr:
  "Magnetic Tunnel Junctions for Future Memory and Logic-in-Memory Applications";
  Talk: International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES), Lublin, Poland; (invited) 19.06.2014 - 21.06.2014; in "Proceedings of the 21st International Conference on Mixed Design of Integrated Circuits and Systems", (2014), 17.
  
  
• [CP-111] F. Rudolf, Y. Wimmer, J. Weinbub, K. Rupp, S. Selberherr:
  "Mesh Generation Using Dynamic Sizing Functions";
  Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 191.
  
  
• [CP-110] K. Rupp, F. Rudolf, J. Weinbub, A. Jungel, T. Grasser:
  "Automatic Finite Volume Discretizations Through Symbolic Computations";
  Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing".
  
  
• [CP-109] J. Weinbub, K. Rupp, F. Rudolf:
  "A Flexible Material Database for Computational Science and Engineering";
  Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 15.06.2014 - 20.06.2014; in "Proc. 4th European Seminar on Computing", (2014), 226.
  
  
• [CP-108] I. Dimov, M. Nedjalkov, J. M. Sellier, S. Selberherr:
  "Neumann Series Analysis of the Wigner Equation Solution";
  Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 459.
  
  
• [CP-107] N. Neophytou, H. Karamitaheri, H. Kosina:
  "Full-Band Simulations of Thermoelectric Properties of Si Nanowires and Thin Layers";
  Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.
  
  
• [CP-106] Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
  "Advanced Numerical Methods for Semi-Classical Transport Simulation in Ultra-Narrow Channels";
  Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 1.
  
  
• [CP-105] V. Sverdlov, D. Osintsev, S. Selberherr:
  "Electron Momentum and Spin Relaxation in Silicon Films: A Rigorous k·p-Based Approach";
  Talk: European Conference on Mathematics for Industry (ECMI), Taormina, Italy; (invited) 09.06.2014 - 14.06.2014; in "Abstracts of The 18th European Conference on Mathematics for Industry", (2014), 454 - 456.
  
  
• [CP-104] Yu.Yu. Illarionov, A. Smith, S. Vaziri, M. Ostling, T. Mueller, M. Lemme, T. Grasser:
  "Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: A Reliability Challenge";
  Talk: Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA; 08.06.2014 - 09.06.2014; in "2014 IEEE Silicon Nanoelectronics Workshop", (2014), 29 - 30.
  
  
• [CP-103] L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
  "Band-to-Band Tunneling in 3D Devices";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 13 - 14 doi:10.1109/IWCE.2014.6865810.
  
  
• [CP-102] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Spin Injection in Silicon: The Role of Screening Effects";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 63 - 64 doi:10.1109/IWCE.2014.6865825.
  
  
• [CP-101] N. Neophytou, H. Kosina:
  "Thermoelectric Properties of Gated Si Nanowires";
  Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 197 - 198.
  
  
• [CP-100] D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
  "Valley Splitting and Spin Lifetime Enhancement in Ultra-Scaled MOSFETs";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 59 - 60 doi:10.1109/IWCE.2014.6865824.
  
  
• [CP-99] Z. Stanojevic, L. Filipovic, O. Baumgartner, H. Kosina:
  "Fast Methods for Full-Band Mobility Calculation";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 51 - 52 doi:10.1109/IWCE.2014.6865821.
  
  
• [CP-98] S. Touski, Z. Chaghazardi, M. Pourfath, M. Moradinasab, R. Faez, H. Kosina:
  "Spin Transport in Graphene Nanoribbons: The Role of Surface-Corrugation";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 1 - 2.
  
  
• [CP-97] T. Windbacher, D. Osintsev, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Frequency Dependence Study of a Bias Field-Free Nano-Scale Oscillator";
  Poster: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 193 - 194 doi:10.1109/IWCE.2014.6865862.
  
  
• [CP-96] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Efficient Calculation of the Two-Dimensional Wigner Potential";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 19 - 20 doi:10.1109/IWCE.2014.6865812.
  
  
• [CP-95] P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Implications of the Coherence Length on the Discrete Wigner Potential";
  Talk: International Workshop on Computational Electronics (IWCE), Paris, France; 03.06.2014 - 06.06.2014; in "17th International Workshop on Computational Electronics (IWCE 2014)", (2014), 155 - 156 doi:10.1109/IWCE.2014.6865852.
  
  
• [CP-94] M. Vexler, Yu.Yu. Illarionov, S. E. Tyaginov, N. S. Sokolov, V. V. Fedorov, T. Grasser:
  "Simulation of the Electrical Characteristics of the Devices with Thin Calcium Fluoride Films on Silicon-(111) Using MINIMOS-NT";
  Talk: DIELECTRICS-2014, St-Petersburg, Russia; 02.06.2014 - 06.06.2014; in "Materials of XIII International conference DIELECTRICS", (2014), 159 - 162.
  
  
• [CP-93] L. Filipovic, R. Orio, S. Selberherr, A. P. Singulani, F. Roger, R. Minixhofer:
  "Effects of Sidewall Scallops on Open Tungsten TSVs";
  Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), 3E.3.1 - 3E.3.6.
  
  
• [CP-92] T. Grasser, K. Rott, H. Reisinger, M. Waltl, J. Franco, B. Kaczer:
  "A Unified Perspective of RTN and BTI";
  Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), 4A.5.1 - 4A.5.7.
  
  
• [CP-91] Yu.Yu. Illarionov, M. Bina, S. E. Tyaginov, K. Rott, H. Reisinger, B. Kaczer, T. Grasser:
  "A Reliable Method for the Extraction of the Lateral Position of Defects in Ultra-Scaled MOSFETs";
  Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), XT13.1 - XT13.6.
  
  
• [CP-90] B. Kaczer, C. Chen, P. Weckx, Ph. J. Roussel, M. Toledano-Luque, M. Cho, J. Watt, K. Chanda, G. Groeseneken, T. Grasser:
  "Maximizing Reliable Performance of Advanced CMOS Circuits - A Case Study";
  Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), 2D.4.1 - 2D.4.6.
  
  
• [CP-89] S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, O. Triebl, B. Kaczer, T. Grasser:
  "Physical Modeling of Hot-Carrier Degradation for Short- and Long-Channel MOSFETs";
  Poster: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), XT16.1 - XT16.8.
  
  
• [CP-88] M. Waltl, W. Goes, K. Rott, H. Reisinger, T. Grasser:
  "A Single-Trap Study of PBTI in SiON nMOS Transistors: Similarities and Differences to the NBTI/pMOS Case";
  Talk: International Reliability Physics Symposium (IRPS), Waikoloa, Hawaii, USA; 01.06.2014 - 05.06.2014; in "Conference Proceedings of International Reliability Physics Symposium", (2014), XT18.1 - XT18.5.
  
  
• [CP-87] T. Grasser, G. Rzepa, M. Waltl, W. Goes, K. Rott, G. Rott, H. Reisinger, J. Franco, B. Kaczer:
  "Characterization and Modeling of Charge Trapping: From Single Defects to Devices";
  Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA; (invited) 28.05.2014 - 30.05.2014; in "Proceedings of IEEE International Conference on IC Design and Technology", (2014), 1 - 4.
  
  
• [CP-86] H. Ceric, S. Selberherr:
  "Electromigration Induced Failure of Solder Bumps and the Role of IMC";
  Poster: International Interconnect Technology Conference (IITC), San Jose, USA; 20.05.2014 - 23.05.2014; in "Proc. Intl. Interconnect Technology Conference (IITC)", (2014), 265 - 267 doi:10.1109/IITC.2014.6831891.
  
  
• [CP-85] V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
  "Modeling Spin-Based Electronic Devices";
  International Conference on Microelectronics (MIEL), Belgrade, Serbia; (invited) 12.05.2014 - 14.05.2014; in "Proceedings of the 29th International Conference on Microelectronics", (2014), 27 - 34 doi:10.1109/MIEL.2014.6842081.
  
  
• [CP-84] L. Filipovic, R. Orio, S. Selberherr:
  "Process and Reliability of SF6/O2 Plasma Etched Copper TSVs";
  Talk: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Ghent, Belgium; 07.04.2014 - 09.04.2014; in "Proceedings of the IEEE 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)", (2014).
  
  
• [CP-83] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "High Performance MRAM-Based Stateful Logic";
  Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 117 - 120 doi:10.1109/ULIS.2014.6813912.
  
  
• [CP-82] Z. Stanojevic, L. Filipovic, O. Baumgartner, M. Karner, C. Kernstock, H. Kosina:
  "Full-Band Transport in Ultra-Narrow p-Type Si Channels: Field, Orientation, Strain";
  Poster: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)" (2014).
  
  
• [CP-81] V. Sverdlov, J. Ghosh, H. Mahmoudi, A. Makarov, D. Osintsev, T. Windbacher, S. Selberherr:
  "Modeling of Spin-Based Silicon Technology";
  Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; (invited) 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 1 - 4 doi:10.1109/ULIS.2014.6813891.
  
  
• [CP-80] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Influence of Magnetization Variations in the Free Layer on a Non-Volatile Magnetic Flip Flop";
  Talk: International Conference on Ultimate Integration of Silicon (ULIS), Stockholm, Sweden; 07.04.2014 - 09.04.2014; in "Proc.Intl.Conf.on Ultimate Integration on Silicon (ULIS)", (2014), 9 - 12 doi:10.1109/ULIS.2014.6813893.
  
  
• [CP-79] A. Makarov, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Modeling Spin-Based Electronic Devices";
  Talk: Nano and Giga Challenges in Microelectronics (NGCM), Phoenix, USA; (invited) 10.03.2014 - 14.03.2014; in "Book of Abstracts".
  
  
• [CP-78] N. Neophytou, H. Kosina:
  "Thermoelectric Properties of Gated Silicon Nanowires";
  Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting)", (2014).
  
  
• [CP-77] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Mobility and Spin Lifetime Enhancement in Thin Silicon Films by Shear Strain";
  Talk: APS March Meeting, Denver, USA; 03.03.2014 - 07.03.2014; in "Bulletin of the American Physical Society (APS March Meeting), Bulletin of the American Physical Society (APS March Meeting)".
  
  
• [CP-76] E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R. Orio, S. Selberherr:
  "Coupled Simulation to Determine Across Wafer Variations for Electrical and Reliability Parameters of Through-Silicon VIAs";
  Talk: European Workshop on Materials for Advanced Metallization (MAM), Chemnitz, Germany; 02.03.2014 - 05.03.2014; in "Book of Abstracts", (2014).
  
  
• [CP-75] D. Osintsev, V. Sverdlov, N. Neophytou, S. Selberherr:
  "Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures";
  Poster: International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria; 23.02.2014 - 28.02.2014; in "Proceedings of International Winterschool on New Developments in Solid State Physics", (2014), 88 - 89.
  
  
• [CP-74] H. Ceric, R. Orio, A. P. Singulani, S. Selberherr:
  "3D Technology Interconnect Reliability TCAD";
  Talk: Pan Pacific Microelectronics Symposium, Big Island of Hawaii, USA; 11.02.2014 - 13.02.2014; in "Proceedings of the 2014 Pan Pacific Microelectronics Symposium", (2014), 1 - 8.
  
  
• [CP-73] L. Filipovic, R. Orio, S. Selberherr:
  "Process and Performance of Copper TSVs";
  Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.
  
  
• [CP-72] L. Filipovic, Z. Stanojevic, O. Baumgartner, H. Kosina:
  "3D Modeling of Direct Band-to-Band Tunneling in Nanowire TFETs";
  Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.
  
  
• [CP-71] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
  Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.
  
  
• [CP-70] Z. Stanojevic, O. Baumgartner, L. Filipovic, H. Kosina:
  "Comprehensive Low-Field Mobility Modeling in Nano-Scaled SOI Channels";
  Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014), 1 - 2.
  
  
• [CP-69] V. Sverdlov, D. Osintsev, S. Selberherr:
  "From Strained SOI MOSFET to Spin MOSFET with Strain: A Modeling Approach";
  Talk: Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits (EUROSOI), Tarragona, Spain; (invited) 27.01.2014 - 29.01.2014; in "Conference Proceedings of the Tenth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", (2014).
  
  
• [CP-68] A. Makarov, V. Sverdlov, S. Selberherr:
  "Fast Switching STT-MRAM Cells for Future Universal Memory";
  Talk: Advanced Workshop on Frontiers in Electronics (WOFE), San Juan, Puerto Rico; (invited) 17.12.2013 - 20.12.2013; in "Abstracts Advanced Workshop on Frontiers in Electronics (WOFE)", (2013).
  
  
• [CP-67] J. Ghosh, V. Sverdlov, S. Selberherr:
  "Influence of a Space Charge Region on Spin Transport in Semiconductor";
  Talk: International Semiconductor Device Research Symposium (ISDRS), Maryland, USA; 11.12.2013 - 13.12.2013; in "Abstracts International Semiconductor Device Research Symposium (ISDRS)", (2013), 27.
  
  
• [CP-66] J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, S. Sioncke, L. Witters, H. Mertens, T. Grasser, G. Groeseneken:
  "Understanding the Suppressed Charge Trapping in Relaxed- and Strained Ge/SiO2/HfO2 pMOSFETs and Implications for the Screening of Alternative High-Mobility Substrate/Dielectric CMOS Gate Stacks";
  Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the 2013 IEEE International Electron Devices Meeting", (2013), 397 - 400.
  
  
• [CP-65] T. Grasser, K. Rott, H. Reisinger, M. Waltl, P.-J. Wagner, F. Schanovsky, W. Goes, G. Pobegen, B. Kaczer:
  "Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI";
  Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the 2013 IEEE International Electron Devices Meeting", (2013), 409 - 412.
  
  
• [CP-64] Z. Stanojevic, M. Karner, H. Kosina:
  "Exploring the Design Space of Non-Planar Channels: Shape, Orientation, and Strain";
  Talk: International Electron Devices Meeting (IEDM), Washington, DC, USA; 09.12.2013 - 11.12.2013; in "Proceedings of the 2013 IEEE International Electron Devices Meeting (IEDM)", (2013), 332 - 335.
  
  
• [CP-63] A. Makarov, V. Sverdlov, S. Selberherr:
  "Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs with a Shared Free Layer: Micromagnetic Modeling";
  Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013).
  
  
• [CP-62] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Spin Lifetime Enhancement in Strained Thin Silicon Films";
  Poster: International Symposium on Advanced Nanostructures and Nano-Devices (ISANN), Kauai, Hawaii, USA; 08.12.2013 - 13.12.2013; in "Abstracts International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013)", (2013).
  
  
• [CP-61] D. Narducci, B. Lorenzi, R. Tonini, S. Frabboni, G. Gazzadi, G. Ottaviani, N. Neophytou, X. Zianni:
  "Paradoxical Enhancement of the Power Factor in Polycrystalline Silicon due to the Formation of Nanovoids";
  Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 1 - 4.
  
  
• [CP-60] S. Wolf, N. Neophytou, Z. Stanojevic:
  "Monte Carlo Simulations Of Thermal Conductivity Nanoporous Si Membranes";
  Talk: European Conference on Thermoelectrics (ECT), Noordwijk, The Netherlands; 18.11.2013 - 20.11.2013; in "Book of Abstracts", (2013), 1 - 4.
  
  
• [CP-59] T. Grasser, K. Rott, H. Reisinger, M. Waltl, F. Schanovsky, W. Goes, B. Kaczer:
  "Recent Advances in Understanding Oxide Traps in pMOS Transistors";
  Talk: International Workshop on Dielectric Thin Films For Future Electron Devices: Science and Technology, Tokyo, Japan; (invited) 07.11.2013 - 09.11.2013; in "Proceedings of 2013 IWDTF", (2013), 95 - 96.
  
  
• [CP-58] J. Ghosh, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Spin Injection and Diffusion in Silicon Based Devices from a Space Charge Layer";
  Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 713 - 714.
  
  
• [CP-57] T. Windbacher, A. Makarov, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Novel Bias-Field-Free Large Gain Spin-Transfer Oscillator";
  Talk: Annual Conference on Magnetism and Magnetic Materials, Denver, USA; 04.11.2013 - 08.11.2013; in "Abstract Book of 58th Annual Conference of Magnetism and Magnetic Materials (MMM)", (2013), 456 - 457.
  
  
• [CP-56] A. Makarov, V. Sverdlov, S. Selberherr:
  "Composite Magnetic Tunnel Junctions for Fast Memory Devices and Efficient Spin-Torque Nano-Oscillators";
  Talk: Intl.Conf.on Information Engineering (ICIE), Hong Kong; 01.11.2013 - 02.11.2013; in "Abstracts Intl.Conf.on Information Engineering (ICIE)", (2013), 7.
  
  
• [CP-55] W. Goes, M. Toledano-Luque, F. Schanovsky, M. Bina, O. Baumgartner, B. Kaczer, T. Grasser:
  "Multi-Phonon Processes as the Origin of Reliability Issues";
  Talk: Meeting of the Electrochemical Society (ECS), San Francisco, USA; (invited) 27.10.2013 - 01.11.2013; in "ECS Transactions 2013 - "Semiconductors, Dielectrics, and Materials for Nanoelectronics 11"", (2013), 31 - 47 doi:10.1149/05807.0031ecst.
  
  
• [CP-54] H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
  "Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 166 - 169 doi:10.1109/IIRW.2013.6804185.
  
  
• [CP-53] R. Coppeta, H. Ceric, D. Holec, T. Grasser:
  "Critical Thickness for GaN Thin Film on AlN Substrate";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 133 - 136.
  
  
• [CP-52] J. Franco, B. Kaczer, P. Roussel, M. Toledano-Luque, P. Weckx, T. Grasser:
  "Relevance of Non-Exponential Single-Defect-Induced Threshold Voltage Shifts for NBTI Variability";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 69 - 72.
  
  
• [CP-51] B. Kaczer, C. Chen, J. Watt, K. Chanda, P. Weckx, M. Toledano-Luque, G. Groeseneken, T. Grasser:
  "Reliability and Performance Considerations for NMOSFET Pass Gates in FPGA Applications";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 94 - 97.
  
  
• [CP-50] G. Rott, H. Nielen, H. Reisinger, W. Gustin, S. E. Tyaginov, T. Grasser:
  "Drift Compensating Effect during Hot-Carrier Degradation of 130nm Dual Gate Oxide p-Channel Transistors";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 73 - 77.
  
  
• [CP-49] S. E. Tyaginov, M. Bina, J. Franco, D. Osintsev, Y. Wimmer, B. Kaczer, T. Grasser:
  "Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 98 - 101.
  
  
• [CP-48] W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
  "Electromigration Induced Stress in Open TSVs";
  Talk: IEEE International Reliability Workshop (IIRW), South Lake Tahoe, USA; 13.10.2013 - 17.10.2013; in "2013 IEEE International Integrated Reliability Workshop Final Report", (2013), 142 - 145 doi:10.1109/IIRW.2013.6804179.
  
  
• [CP-47] W. Goes, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
  "Understanding Correlated Drain and Gate Current Fluctuations";
  Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Arcachon, France; (invited) 30.09.2013 - 04.10.2013; in "20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)", (2013), 51 - 56.
  
  
• [CP-46] Yu.Yu. Illarionov, S. E. Tyaginov, M. Bina, T. Grasser:
  "A Method to Determine the Lateral Trap Position in Ultra-Scaled MOSFETs";
  Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM)", (2013), 728 - 729.
  
  
• [CP-45] A. Makarov, V. Sverdlov, S. Selberherr:
  "Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs";
  Talk: Solid State Devices and Materials Conference (SSDM), Fukuoka, Japan; 24.09.2013 - 27.09.2013; in "Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM 2013)", (2013), 796 - 797.
  
  
• [CP-44] N. Neophytou, Z. Stanojevic, H. Kosina:
  "Low-Field Mobility of Ultra-Narrow Si Nanowire MOSFETs Using Self-Consistent Full-Band Simulations";
  Poster: International Conference on One Dimensional Nanomaterials (ICON), Annecy, France; 23.09.2013 - 26.09.2013; in "Booklet of Abstracts, Fifth International Conference on One Dimensional Nanomaterials", (2013), 142.
  
  
• [CP-43] K. Rupp, Ph. Tillet, B. Smith, T. Grasser, A. Jungel:
  "A Note on the GPU Acceleration of Eigenvalue Computations";
  Talk: International Conference of Numerical Analysis and Applied Mathematics (ICNAAM), Rhodes, Greece; 21.09.2013 - 27.09.2013; in "AIP Proceedings, volume 1558", (2013), 1536 - 1539.
  
  
• [CP-42] Yu.Yu. Illarionov, M. I. Vexler, V. V. Fedorov, S. M. Suturin, D. V. Isakov, I. Grekhov:
  "Optical Characterization of the Injection Properties of MIS Structures with Thin CaF2 and HfO2/SiO2 Insulating Layers on Silicon";
  Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), 229.
  
  
• [CP-41] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Reduction of Momentum and Spin Relaxation Rate in Strained Thin Silicon Films";
  Talk: European Solid-State Device Research Conference (ESSDERC), Bucharest, Romania; 16.09.2013 - 20.09.2013; in "Proceedings of the 43rd European Solid-State Device Research Conference (ESSDERC)", (2013), 334 - 337.
  
  
• [CP-40] S. E. Tyaginov, D. Osintsev, Yu.Yu. Illarionov, J.M. Park, H. Enichlmair, M. I. Vexler, T. Grasser:
  "Tunnelling of Strongly Non-Equilibrium Carriers in the Transistors of Traditional Configuration";
  Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), 441.
  
  
• [CP-39] M. I. Vexler, Yu.Yu. Illarionov, S. M. Suturin, V. V. Fedorov, N. S. Sokolov:
  "Tunnel Charge Transport in Au/CaF2/Si(111) System";
  Poster: XI Russian Conference on Semiconductor Physics, St-Petersburg, Russia; 16.09.2013 - 20.09.2013; in "Abstracts of XI Russian Conference on Semiconductor Physics", (2013), 74.
  
  
• [CP-38] S. Amoroso, L. Gerrer, A. Asenov, J. M. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr:
  "Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 25 - 28.
  
  
• [CP-37] O. Baumgartner, M. Bina, W. Goes, F. Schanovsky, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
  "Direct Tunneling and Gate Current Fluctuations";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 17 - 20.
  
  
• [CP-36] H. Ceric, A. P. Singulani, R. Orio, S. Selberherr:
  "Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 73 - 76.
  
  
• [CP-35] R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
  "Epitaxial Volmer-Weber Growth Modelling";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 45 - 48.
  
  
• [CP-34] L. Filipovic, O. Baumgartner, H. Kosina:
  "Modeling Direct Band-to-Band Tunneling Using QTBM";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 212 - 215.
  
  
• [CP-33] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
  "Modeling the Growth of Thin SnO2 Films Using Spray Pyrolysis Deposition";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 208 - 211.
  
  
• [CP-32] B. Kaczer, V. Afanas´Ev, K. Rott, F. Cerbu, J. Franco, W. Goes, T. Grasser, O. Madia, D. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
  "Experimental Characterization of BTI Defects";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 444 - 450.
  
  
• [CP-31] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "Performance Analysis and Comparison of Two 1T/1MTJ-Based Logic Gates";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 163 - 166.
  
  
• [CP-30] N. Neophytou, Z. Stanojevic, H. Kosina:
  "Full Band Calculations of Low-Field Mobility in p-Type Silicon Nanowire MOSFETs";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 81 - 84.
  
  
• [CP-29] R. Orio, H. Ceric, S. Selberherr:
  "Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 232 - 235.
  
  
• [CP-28] D. Osintsev, V. Sverdlov, S. Selberherr:
  "Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 236 - 239.
  
  
• [CP-27] F. Schanovsky, O. Baumgartner, W. Goes, T. Grasser:
  "A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 1 - 4.
  
  
• [CP-26] F. Schanovsky, W. Goes, T. Grasser:
  "Advanced Modeling of Charge Trapping at Oxide Defects";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 451 - 458.
  
  
• [CP-25] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "Two-Dimensional Transient Wigner Particle Model";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 404 - 407.
  
  
• [CP-24] A. P. Singulani, H. Ceric, S. Selberherr:
  "Stress Estimation in Open Tungsten TSV";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 65 - 68.
  
  
• [CP-23] Z. Stanojevic, H. Kosina:
  "Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 352 - 355.
  
  
• [CP-22] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip Flop";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 368 - 371.
  
  
• [CP-21] W. H. Zisser, H. Ceric, R. Orio, S. Selberherr:
  "Electromigration Analyses of Open TSVs";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, United Kingdom; 03.09.2013 - 05.09.2013; in "Proceedings of the 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)", (2013), 244 - 247.
  
  
• [CP-20] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "STT-MRAM-Based Reprogrammable Logic Gates for Large-Scale Non-Volatile Logic Integration";
  Poster: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 208.
  
  
• [CP-19] A. Makarov, V. Sverdlov, S. Selberherr:
  "Geometry Optimization of Spin-Torque Oscillators Composed of Two MgO-MTJs with a Shared Free Layer";
  Talk: International Conference on Nanoscale Magnetism (ICNM), Istanbul, Turkey; 02.09.2013 - 06.09.2013; in "Proceedings of the International Conference on Nanoscale Magnetism", (2013), 69.
  
  
• [CP-18] A. Makarov, V. Sverdlov, D. Osintsev, S. Selberherr:
  "Simulation of Magnetic Oscillations in a System of Two MTJs with a Shared Free Layer";
  Poster: Soft Magnetic Materials Conference (SMM), Budapest, Hungary; 01.09.2013 - 04.09.2013; in "Abstracts Book of The 21st International Conference on Soft Magnetic Materials", (2013), 101.
  
  
• [CP-17] K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub:
  "ViennaCL - Portable High Performance at High Convenience";
  Talk: The European Conference on Numerical Mathematics and Advanced Applications (ENUMATH), Lausanne, Switzerland; (invited) 26.08.2013 - 30.08.2013; in "ENUMATH 2013 Proceedings", (2013), 1 - 2.
  
  
• [CP-16] A. Makarov, V. Sverdlov, S. Selberherr:
  "Structural Optimization of MTJs with a Composite Free Layer";
  Talk: Conf. on Spintronics (SPINTRONICS), San Diego, USA; (invited) 25.08.2013 - 29.08.2013; in "Proceedings of SPIE", (2013), 88132Q1-2Q9 doi:10.1117/12.2025568.
  
  
• [CP-15] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Novel Non-Volatile Magnetic Flip Flop";
  Poster: International Conference on Spintronics and Quantum Information Technology (SPINTECH), Chicago Illinois USA; 29.07.2013 - 02.08.2013; in "In Proceedings of Seventh International School on Spintronics and Quantum Information Technology", (2013), 1 pages.
  
  
• [CP-14] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "STT-MTJ-Based Implication Logic Circuits for Non-Volatile Logic-in-Memory Applications";
  Talk: Symposium on CMOS Emerging Technologies, Whistler, BC, Canada; (invited) 17.07.2013 - 19.07.2013; in "Book of Abstracts of the 2013 Symposium on CMOS Emerging Technologies (CMOS ET 2013)".
  
  
• [CP-13] H. Ceric, R. Orio, S. Selberherr:
  "Analysis of Solder Bump Electromigration Reliability";
  Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), 713 - 716 doi:10.1109/IPFA.2013.6599258.
  
  
• [CP-12] W. Goes, M. Toledano-Luque, O. Baumgartner, M. Bina, F. Schanovsky, B. Kaczer, T. Grasser:
  "Understanding Correlated Drain and Gate Current Fluctuations";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), 51 - 56.
  
  
• [CP-11] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "MRAM-Based Logic Array for Large-Scale Non-Volatile Logic-in-Memory Applications";
  Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 2 pages.
  
  
• [CP-10] A. Makarov, V. Sverdlov, S. Selberherr:
  "Transverse Domain Wall Formation in a Free Layer: A Mechanism for Switching Failure in a MTJ-Based STT-MRAM";
  Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), 267 - 270 doi:10.1109/IPFA.2013.6599165.
  
  
• [CP-9] D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr:
  "Using Strain to Increase the Reliability of Scaled Spin MOSFETs";
  Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), 770 - 773 doi:10.1109/IPFA.2013.6599272.
  
  
• [CP-8] A. P. Singulani, H. Ceric, E. Langer:
  "Stress Evolution on Tungsten Thin-Film of an Open Through Silicon Via Technology";
  Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Suzhou, China; 15.07.2013 - 19.07.2013; in "Proceedings of the 20th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2013), 216 - 220.
  
  
• [CP-7] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Novel MTJ-Based Shift Register for Non-Volatile Logic Applications";
  Talk: 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), New York City, USA; 15.07.2013 - 17.07.2013; in "Proceedings of the 2013 IEEE/ACM International Symposium on Nanoscale Architectures", (2013), 2 pages.
  
  
• [CP-6] L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Teva, J. Kraft, J. Siegert, F. Schrank:
  "Modeling Spray Pyrolysis Deposition";
  Talk: World Congress on Engineering (WCE), London, UK; 03.07.2013 - 05.07.2013; in "Proceedings of the World Congress on Engineering (WCE) Vol II", (2013), 987 - 992.
  
  
• [CP-5] A. P. Singulani, H. Ceric, E. Langer:
  "Stress Reduction Induced by Bosch Scallops on an Open TSV Technology";
  Poster: International Interconnect Technology Conference (IITC), Kyoto, Japan; 13.06.2013 - 15.06.2013; in "Proceedings of International Interconnect Techonology Conference (IITC)", (2013), 1 - 2 doi:10.1109/IITC.2013.6615578.
  
  
• [CP-4] M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, M. Bina, T. Grasser, M. Cho, P. Weckx, G Groeseneken:
  "Degradation of Time Dependent Variability due to Interface State Generation";
  Talk: International Symposium on VLSI Technology, Kyoto, Japan; 11.06.2013 - 14.06.2013; in "2013 Symposium on VLSI Technology (VLSIT)", (2013), 190 - 191.
  
  
• [CP-3] P. Schwaha, J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
  "The Ultimate Equivalence Between Coherent Quantum and Classical Regimes";
  Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 04.06.2013 - 07.06.2013; in "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 152 - 153.
  
  
• [CP-2] A. P. Singulani, H. Ceric, E. Langer, S. Carniello:
  "Effects of Bosch Scallops on Metal Layer Stress of an Open Through Silicon Via Technology";
  Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 14.04.2013 - 18.04.2013; in "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), CP.2.1 - CP.2.5 doi:10.1109/IRPS.2013.6532066.
  
  
• [CP-1] M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour, H. Kosina:
  "Theoretical Study of Single and Bilayer Graphene Nanoribbons Photodetectors";
  Talk: Meeting of the Electrochemical Society (ECS), Seattle, Washington, USA; 06.05.2012 - 10.05.2012; in "ECS Meeting", (2012), 1 pages.
  
  

• [SR-1] M. Nedjalkov:
  "Verification and Validation of the Coupled HCI and NBTI Model for HV Devices";
  (2013), 26 pages.
  
  

• [PA-4] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Spin Torque Magnetic Integrated Circuit";
  Patent: International, No. PCT/EP2014/054985; Patent priority number EP 13161375.4; submitted: 13.03.2014.
  
  
• [PA-3] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "RRAM Implication Logic Gates";
  Patent: International, No. Wo 2014/079747 A1; Patent priority number EP 12193826.0; submitted: 13.11.2013.
  
  
• [PA-2] T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Spin Torque Magnetic Integrated Circuit";
  Patent: Europe, No. EP 13161375.4; submitted: 27.03.2013.
  
  
• [PA-1] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
  "RRAM Implication Logic Gates";
  Patent: Europe, No. Ep 2 736 044 A1; submitted: 22.11.2012.
  
  

• [DT-7] D. Osintsev:
  "Modeling Spintronic Effects in Silicon";
  Reviewer: V. Sverdlov, D. Süss; E360, 2014, oral examination: 28.05.2014.
  
  
• [DT-6] H. Mahmoudi:
  "Devices and Circuits for Stateful Logic and Memristive Sensing Applications";
  Reviewer: V. Sverdlov, B. Meinerzhagen; E360, 2014, oral examination: 28.04.2014.
  
  
• [DT-5] M. Bina:
  "Charge Transport Models for Reliability Engineering of Semiconductor Devices";
  Reviewer: T. Grasser, C. Jungemann; E360, 2014, oral examination: 25.03.2014.
  
  
• [DT-4] A. Makarov:
  "Modeling of Emerging Resistive Switching Based Memory Cells";
  Reviewer: V. Sverdlov, S. Cristoloveanu; E360, 2014, oral examination: 18.03.2014.
  
  
• [DT-3] J. Weinbub:
  "Frameworks for Micro- and Nanoelectronics Device Simulation";
  Reviewer: S. Selberherr, A. Asenov; E360, 2014, oral examination: 17.02.2014.
  
  
• [DT-2] G. Pobegen:
  "Degradation of Electrical Parameters of Power Semiconductor Devices - Process Influences and Modeling";
  Reviewer: T. Grasser, P. Hadley; E360, 2013, oral examination: 05.12.2013.
  
  
• [DT-1] H. Karamitaheri:
  "Thermal and Thermoelectric Properties of Nanostructures";
  Reviewer: H. Kosina, E. Bauer; E360, 2013, oral examination: 18.07.2013.
  
  

• [MT-2] M. Wagner:
  "3-Dimensional Simulation of Thermography Images Based on PV-Cell Characteristics";
  Supervisor: J. Summhammer; E141, 2014, final examination: 13.03.2014.
  
  
• [MT-1] G. Rzepa:
  "Microscopic Modeling of NBTI in MOS Transistors";
  Supervisor: T. Grasser, W. Goes; E360, 2013, final examination: 20.11.2013.
  
  

• [BT-3] Kara Alper:
  "Modeling of Self-Neutralizing Reactions via the Langevin Equation";
  Supervisor: E. Langer, F. Schanovsky; Institut für Mikroelektronik, 2013.
  
  
• [BT-2] David Madl:
  "Interfacing of the PARDISO Sparse Linear Solver for Schrödinger-Poisson Simulation";
  Supervisor: E. Langer, Z. Stanojevic; Institut für Mikroelektronik, 2014.
  
  
• [BT-1] Mario Petrovic:
  "Generalized Minimal Residual Method (GMRES)";
  Supervisor: E. Langer, K. Rupp; Institut für Mikroelektronik, 2014.