Professors

Erasmus Langer
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.,
Head of Institute
Preface
Siegfried Selberherr
O.Univ.Prof. Dipl.-Ing. Dr.techn. Dr.h.c.
Preface
Tibor Grasser
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
Hydrogen-Related Volatile Defects as the Possible Cause for the Recoverable Component of NBTI and RTN
Hans Kosina
Ao.Univ.Prof. Dipl.-Ing. Dr.techn.
Thermoelectric Properties of Semiconductor Nanostructures and Nanostructured Tunnel FETs
Viktor Sverdlov
Privatdoz. MSc PhD
Modeling Silicon Spintronic Devices

Administration

Ewald Haslinger
Markus Kampl
BSc
Manfred Katterbauer
Dipl.-Ing. (FH)
Renate Winkler

Researchers

Oskar Baumgartner
Dipl.-Ing.
Direct Tunneling and Gate Current Fluctuations
Markus Bina
Dipl.-Ing. Dipl.-Ing. Dr.techn.
Predictive Hot-Carrier Modeling of n-Channel MOSFETs
Hajdin Ceric
Assistant Prof. Dipl.-Ing. Dr.techn.
Electromigration Reliability of Solder Bumps
Johann Cervenka
Senior Scientist Dipl.-Ing. Dr.techn.
Quantum Evolution over Discrete Phase Space Trajectories
Raffaele Coppeta
MSc
Modelling of the Residual Stress in III-N Film Grown on Si Substrate
Paul Ellinghaus
MSc
Wigner-Boltzmann Monte Carlo Simulation
Lado Filipovic
MSc Dr.techn.
The Influence of Processing on the Performance and Reliability of Through Silicon Vias
Lidija Filipovic
MSc
3D Modeling of Band-To-Band Tunneling
Joydeep Ghosh
MSc
Influence of Charge Accumulation on Spin Transport in Silicon Based Devices
Wolfgang Goes
Dipl.-Ing. Dr.techn.
Analogies of Charge Trapping in p- and n-Channel MOSFETs
Alexander Grill
Dipl.-Ing.
Threshold Voltage Drift in Gallium Nitride Based MIS-HEMTs
Yury Illarionov
MSc
Evaluation of the Lateral Trap Position in Ultra-Scaled MOSFETs
Hossein Karamitaheri
MSc Dr.techn.
Hiwa Mahmoudi
MSc Dr.techn.
Stateful MRAM Arrays for Large-Scale Logic-in-Memory Applications
Alexander Makarov
MSc Dr.techn.
Concept of a Bias-Field-Free Spin-Torque Oscillator Based on Two MgO-MTJs
Mahdi Moradinasab
MSc
Dynamics of Quantum Cascade Lasers
Andreas Morhammer
Dipl.-Ing.
Mihail Nedjalkov
D.Sc.
Trapping/Scattering of Discrete Charges
Neophytos Neophytou
MSc PhD
Roberto Orio
MSc Dr.techn.
Dimitry Osintsev
MSc Dr.techn.
Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach
Santo Papaleo
MSc
Stress Evolution During the Nanoindentation in TSV
Mahdi Pourfath
MSc Dr.techn.
Investigation of Graphene-Based Tunneling Field-Effect TransistorsEffect Transistors
Marco Rovitto
MSc
Florian Rudolf
Dipl.-Ing.
Highly Flexible Mesh Generation for Physical Simulation
Karl Rupp
MSc Dipl.-Ing. Dr.techn.
ViennaSHE: A Multi-Dimensional Deterministic Boltzmann Solver
Gerhard Rzepa
Dipl.-Ing.
Microscopic Modeling of NBTI in MOS Transistors
Franz Schanovsky
Dipl.-Ing. Dr.techn.
Prateek Sharma
MSc
Modeling Carrier Energy Distribution Function For Power Devices
Anderson Singulani
MSc Dr.techn.
Zlatan Stanojevic
Dipl.-Ing.
Surface Roughness Scattering in Non-Planar Channels
Stanislav Tyaginov
MSc PhD
Physical Modeling of Hot-Carrier Degradation for Short- and Long-Channel MOSFETs
Bianka Ullmann
Dipl.-Ing.
Michael Waltl
Dipl.-Ing.
Single-Trap Study of PBTI in SiON NMOS Transistors Using the Time-Dependent Defect Spectroscopy
Josef Weinbub
Dipl.-Ing. Dr.techn.
ViennaMini — The Flexible Device Simulation Framework
Yannick Wimmer
Dipl.-Ing.
Defect Properties of the Hydrogen Bridge in Amorphous Silica
Thomas Windbacher
Dipl.-Ing. Dr.techn.
Spintronic Building Blocks: Towards Fully Non-Volatile Information Processing Systems
Stefanie Wolf
Dipl.-Ing.
Wolfhard Zisser
Dipl.-Ing.
Analysis of Electromigration in TSVs