• [BK-3] V. Sverdlov, S. Selberherr:
  "Special Issue: Extended Papers Selected from EUROSOI-ULIS 2016";
  Solid-State Electronics, Elsevier, (2017), ISSN: 0038-1101, 206 page(s).
  
  
• [BK-2] B. Jonker, W. Porod, V. Sverdlov, K. Matsumoto, S. Selberherr, S.M. Goodnick:
  "Innovative Nanoscale Devices and Systems";
  Society for Micro- and Nanoelectronics, (2016), ISBN: 978-3-901578-30-4, 88 page(s).
  
  
• [BK-1] B. Ullmann, G. Artner, I. Hahn, P. Hans, H. Krebs, P. Eder-Neuhauser, R. Zemann:
  "Proceedings VSS 2016 - Vienna young Scientists Symposium";
  Book of Abstracts, Dipl.Ing. Heinz A. Krebs, (2016), ISBN: 978-3-9504017-2-1, 128 page(s).
  
  

• [PJ-29] M. Vexler, Yu. Illarionov, I. Grekhov:
  "Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron Tunneling";
  Semiconductors (Physics of Semiconductor Devices), 51 (2017), 444 - 448 doi:10.1134/S1063782617040224.
  
  
• [PJ-28] Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
  "Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
  2D Materials, 4 (2017), 1 - 10 doi:10.1088/2053-1583/aa734a.
  
  
• [PJ-27] R. Stradiotto, G. Pobegen, C. Ostermaier, M. Waltl, A. Grill, T. Grasser:
  "Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs";
  IEEE Transactions on Electron Devices, 64 (2017), 1045 - 1052 doi:10.1109/TED.2017.2655367.
  
  
• [PJ-26] M. Thesberg, H. Kosina, N. Neophytou:
  "On the Lorenz Number of Multiband Materials";
  Physical Review B, 95 (2017), 125206-1 - 125206-14 doi:10.1063/1.4972192.
  
  
• [PJ-25] P. Manstetten, J. Weinbub, A. Hössinger, S. Selberherr:
  "Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces";
  Procedia Computer Science, 108 (2017), 245 - 254 doi:10.1016/j.procs.2017.05.067.
  
  
• [PJ-24] M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
  "Superior NBTI in High-k SiGe Transistors - Part II: Theory";
  IEEE Transactions on Electron Devices, 64 (2017), 2099 - 2105 doi:10.1109/TED.2017.2686454.
  
  
• [PJ-23] M. Waltl, G. Rzepa, A. Grill, W. Gös, J. Franco, B. Kaczer, L. Witters, J. Mitard, N. Horiguchi, T. Grasser:
  "Superior NBTI in High-k SiGe Transistors - Part I: Experimental";
  IEEE Transactions on Electron Devices, 64 (2017), 2092 - 2098 doi:10.1109/TED.2017.2686086.
  
  
• [PJ-22] C. Ostermaier, P. Lagger, G. Prechtl, A. Grill, T. Grasser, D. Pogany:
  "Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs";
  Applied Physics Letters, 110 (2017), 1 - 4 doi:10.1063/1.4982231.
  
  
• [PJ-21] E. Brinciotti, G. Badino, M. Knaipp, G. Gramse, J. Smoliner, F. Kienberger:
  "Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy";
  IEEE Transactions on Nanotechnology, 16 (2017), 245 - 252 doi:10.1109/TNANO.2017.2657888.
  
  
• [PJ-20] B. Kaczer, J. Franco, S. E. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B.J. O´Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, N. Horiguchi:
  "Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices";
  Journal of Vacuum Science & Technology B, 35 (2017), 01A109-1 - 01A109-6 doi:10.1116/1.4972872.
  
  
• [PJ-19] P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
  "Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity";
  Solid-State Electronics, 128 (2017)(invited), 141 - 147 doi:10.1016/j.sse.2016.10.029.
  
  
• [PJ-18] V. Simonka, G. Nawratil, A. Hössinger, J. Weinbub, S. Selberherr:
  "Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation";
  Solid-State Electronics, 128 (2017)(invited), 135 - 140 doi:10.1016/j.sse.2016.10.032.
  
  
• [PJ-17] M. Reiche, M. Kittler, E. Pippel, H. Uebensee, H. Kosina, A. Grill, Z. Stanojevic, O. Baumgartner:
  "Impact of Defect-Induced Strain on Device Properties";
  Advanced Engineering Materials, 18 (2016), 1 - 4 doi:10.1002/adem.201600736.
  
  
• [PJ-16] M. Thesberg, H. Kosina, N. Neophytou:
  "On the Effectiveness of the Thermoelectric Energy Filtering Mechanism in Low-Dimensional Superlattices and Nano-Composites";
  Journal of Applied Physics, 120 (2016), 234302-1 - 234302-9 doi:10.1063/1.4972192.
  
  
• [PJ-15] K. Rupp, C. Jungemann, S.-M Hong, M. Bina, T. Grasser, A. Jüngel:
  "A Review of Recent Advances in the Spherical Harmonics Expansion Method for Semiconductor Device Simulation";
  Journal of Computational Electronics, 15 (2016), 939 - 958 doi:10.1007/s10825-016-0828-z.
  
  
• [PJ-14] M. Vexler, G.G. Kareva, Yu. Illarionov, I. Grekhov:
  "Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si Nanostructures";
  Technical Physics Letters, 42 (2016), 1090 - 1093 doi:10.1134/S1063785016110109.
  
  
• [PJ-13] X. Jing, E. Panholzer, X. Song, E. Grustan-Gutierrez, F. Hui, Y. Shi, G. Benstetter, Yu. Illarionov, T. Grasser, M. Lanza:
  "Fabrication of Scalable and Ultra Low Power Photodetectors with High Light/Dark Current Ratios Using Polycrystalline Monolayer MoS2 Sheets";
  Nano Energy, 30 (2016), 494 - 502 doi:10.1016/j.nanoen.2016.10.032.
  
  
• [PJ-12] Yu. Illarionov, M. Waltl, G. Rzepa, J. Kim, S. Kim, A. Dodabalapur, D. Akinwande, T. Grasser:
  "Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors";
  ACS Nano, 10 (2016), 9543 - 9549 doi:10.1021/acsnano.6b04814.
  
  
• [PJ-11] L. Filipovic, S. Selberherr:
  "Stress Considerations for System-on-Chip Gas Sensor Integration in CMOS Technology";
  IEEE Transactions on Device and Materials Reliability, 16 (2016), 483 - 495 doi:10.1109/TDMR.2016.2625461.
  
  
• [PJ-10] S. Papaleo, W. H. Zisser, A.P. Singulani, H. Ceric, S. Selberherr:
  "Stress Evolution During Nanoindentation in Open TSVs";
  IEEE Transactions on Device and Materials Reliability, 16 (2016), 470 - 474 doi:10.1109/TDMR.2016.2622727.
  
  
• [PJ-9] B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, M. Simicic, V. Putcha, E. Bury, M. Cho, R. Degraeve, D. Linten, G. Groeseneken, P. Debacker, B. Parvais, P. Raghavan, F. Catthoor, G. Rzepa, M. Waltl, W. Gös, T. Grasser:
  "The Defect-Centric Perspective of Device and Circuit Reliability - From Gate Oxide Defects to Circuits";
  Solid-State Electronics, 125 (2016), 52 - 62 doi:10.1016/j.sse.2016.07.010.
  
  
• [PJ-8] K. Rupp, Ph. Tillet, F. Rudolf, J. Weinbub, A. Morhammer, T. Grasser, A. Jüngel, S. Selberherr:
  "ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures";
  SIAM Journal on Scientific Computing, 38 (2016), S412 - S439 doi:10.1137/15M1026419.
  
  
• [PJ-7] A. Makarov, T. Windbacher, V. Sverdlov, S. Selberherr:
  "CMOS-Compatible Spintronic Devices: A Review";
  Semiconductor Science and Technology, 31 (2016)(invited), 113006-1 - 113006-25 doi:10.1088/0268-1242/31/11/113006.
  
  
• [PJ-6] V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
  "Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide";
  Journal of Applied Physics, 120 (2016), 135705-1 - 135705-8 doi:10.1063/1.4964688.
  
  
• [PJ-5] K. Rupp, J. Weinbub, A. Jüngel, T. Grasser:
  "Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units";
  ACM Transactions on Mathematical Software, 43 (2016), 11:1 - 11:27 doi:10.1145/2907944.
  
  
• [PJ-4] Z. Chaghazardi, S. Touski, M. Pourfath, R. Faez:
  "Spin Relaxation in Graphene Nanoribbons in the Presence of Substrate Surface Roughness";
  Journal of Applied Physics, 120 (2016), 053904-1 - 053904-5 doi:10.1063/1.4960354.
  
  
• [PJ-3] N.S. Azar, M. Pourfath:
  "Aggregation Kinetics and Stability Mechanisms of Pristine and Oxidized Nanocarbons in Polar Solvents";
  The Journal of Physical Chemistry C, 120 (2016), 16804 - 16814 doi:10.1021/acs.jpcc.6b05318.
  
  
• [PJ-2] Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M. M. Furchi, T. Müller, T. Grasser:
  "The Role of Charge Trapping in MoS₂/SiO₂ and MoS₂/hBN Field-Effect Transistors";
  2D Materials, 3 (2016), 035004-1 - 035004-10 doi:10.1088/2053-1583/3/3/035004.
  
  
• [PJ-1] G. Rescher, G. Pobegen, T. Grasser:
  "Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress";
  Materials Science Forum, 858 (2016), 481 - 484 doi:10.4028/www.scientific.net/MSF.858.481.
  
  

• [BC-4] V. Sverdlov, S. Selberherr:
  "Influence of Spin Relaxation on Trap-assisted Resonant Tunneling in Ferromagnet-Oxide-Semiconductor Structures";
  in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 202 - 205 doi:10.1109/ULIS.2016.7440088.
  
  
• [BC-3] L. Wang, T. Sadi, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "Simulation Analysis of the Electro-Thermal Performance of SOI FinFETs";
  in: "Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", IEEE Xplore, 2016, ISBN: 978-1-4673-8608-1, 56 - 59 doi:10.1109/ULIS.2016.7440051.
  
  
• [BC-2] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "A Universal Nonvolatile Processing Environment";
  in: "Future Trends in Microelectronics - Journey into the Unknown", S. Luryi, J. Xu, A. Zaslavsky (ed); John Wiley & Sons, 2016, ISBN: 978-1-119-06911-9, 83 - 91 doi:10.1002/9781119069225.ch1-6.
  
  
• [BC-1] E. Gutierrez-Dominguez, F. Gamiz, V. Sverdlov, S. Selberherr, A. Torres-Jacome:
  "Device Physics, Modeling, and Technology for Nanoscaled Semiconductor Devices";
  in: "Nano-Scaled Semiconductor Technologies: Physics, Modelling, Characterisation, and Societal Impact", E. Gutierrez-Dominguez (ed); Institution of Engineering and Technology, 2016, ISBN: 978-1-84919-930-8, 17 - 185 doi:10.1049/PBCS027E_ch2.
  
  

• [CP-58] V. Sverdlov, J. Weinbub, S. Selberherr:
  "Electron Spin at Work in Modern and Emerging Devices";
  Talk: Energy-Materials-Nanotechnology Meeting (EMN) on Quantum, Wien, Austria; (invited) 18.06.2017 - 22.06.2017; in "Book of Abstracts of the 2017 EMN Meeting on Quantum", (2017), 31 - 33.
  
  
• [CP-57] T. Sadi, E. Towie, M. Nedjalkov, A. Asenov, S. Selberherr:
  "Monte Carlo Particles in Quantum Wires: Effects of the Confinement";
  Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 05.06.2017 - 09.06.2017; in "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2017), 89 - 90.
  
  
• [CP-56] M. Thesberg, H. Kosina:
  "NEGF Through Finite-Volume Discretization";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 173 - 174.
  
  
• [CP-55] P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
  "Wigner Modelling of Surface Roughness in Quantum Wires";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 171 - 172.
  
  
• [CP-54] V. Sverdlov, J. Weinbub, S. Selberherr:
  "Spin-Dependent Trap-Assisted Tunneling in Magnetic Tunnel Junctions: A Monte Carlo Study";
  Talk: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology", (2017), 88 - 90.
  
  
• [CP-53] M. Kampl, H. Kosina:
  "Investigation of Hot-Carrier Effects Using a Backward Monte Carlo Method and Full Bands";
  Poster: International Workshop on Computational Nanotechnology (IWCN), Low Wood Bay, Lake District, UK; 05.06.2017 - 09.06.2017; in "Abstract Book International Workshop on Computational Nanotechnology (IWCN)", (2017), 147 - 148.
  
  
• [CP-52] P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
  "Wigner Analysis of Surface Roughness in Quantum Wires";
  Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in "Book of Abstracts of the 2^nd International Wigner Workshop (IW²)", 40 - 41.
  
  
• [CP-51] R. Kosik, M. Kampl, H. Kosina:
  "On the Characteristic Neumann Equation and the Wigner Equation";
  Talk: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in "Book of Abstracts of the 2^nd International Wigner Workshop (IW²)", 26 - 27.
  
  
• [CP-50] J. Weinbub, M. Nedjalkov, I. Dimov, S. Selberherr:
  "Wigner-Signed Particles Study of Double Dopant Quantum Effects";
  Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in "Book of Abstracts of the 2^nd International Wigner Workshop (IW²)", 50 - 51.
  
  
• [CP-49] J. Cervenka, L. Filipovic:
  "Numerical Aspects of the Deterministic Solution of the Wigner Equation";
  Poster: International Wigner Workshop (IW2), Low Wood Bay, Lake District, UK; 05.06.2017; in "Book of Abstracts of the 2^nd International Wigner Workshop (IW²)", 42 - 43.
  
  
• [CP-48] L. Gnam, J. Weinbub, A. Hössinger, S. Selberherr:
  "Towards a Metric for an Automatic Hull Mesh Coarsening Strategy";
  Talk: Vienna Young Scientists Symposium (VSS), Wien, Österreich; 01.06.2017 - 02.06.2017; in "Proceedings of the Vienna Young Scientists Symposium", (2017), 118 - 119.
  
  
• [CP-47] V. Sverdlov, S. Selberherr:
  "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
  Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Warsaw, Poland; (invited) 28.05.2017 - 30.05.2017; in "Proceedings of the ETCMOS 2017", (2017), 57.
  
  
• [CP-46] N. Neophytou, S. Foster, M. Thesberg, H. Kosina:
  "Electronic Transport Simulations in Nanocomposites - Exploring the Features that Optimize the Thermoelectric Power Factor";
  Talk: E-MRS Spring Meeting, Strasburg, France; 22.05.2017 - 26.05.2017; (2017).
  
  
• [CP-45] Yu. Illarionov, M. Waltl, T. Knobloch, G. Rzepa, T. Grasser:
  "Reliability Perspective of 2D Electronics";
  Talk: International Conference on Physics of 2D Crystals (ICP2C2), Ha Long, Vietnam; 25.04.2017 - 30.04.2017; (2017).
  
  
• [CP-44] S. Selberherr:
  "Integrated Gas Sensors for Wearable Electronics";
  Talk: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong; (invited) 12.04.2017.
  
  
• [CP-43] S. Selberherr:
  "The Evolution and Potential Future of Microelectronics";
  Talk: IEEE EDS Distinguished Lecture, The Hong Kong Polytechnic University, Hong Kong; (invited) 12.04.2017.
  
  
• [CP-42] B. Ullmann, M. Jech, S. E. Tyaginov, M. Waltl, Yu. Illarionov, A. Grill, K. Puschkarsky, H. Reisinger, T. Grasser:
  "The Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on Single Oxide Defects";
  Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 04.04.2017 - 06.04.2017; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), XT-10.1 - XT-10.6 doi:10.1109/IRPS.2017.7936424.
  
  
• [CP-41] A. Grill, B. Stampfer, M. Waltl, K.-S. Im, J. Lee, C. Ostermaier, H. Ceric, T. Grasser:
  "Characterization and Modeling of Single Defects in GaN/AlGaN Fin-MIS-HEMTs";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of 2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), 3B-5.1 - 3B-5.5 doi:10.1109/IRPS.2017.7936285.
  
  
• [CP-40] G. Rzepa, J. Franco, A. Subirats, M. Jech, A. Chasin, A. Grill, M. Waltl, T. Knobloch, B. Stampfer, T. Chiarella, N. Horiguchi, L. Ragnarsson, D. Linten, B. Kaczer, T. Grasser:
  "Efficient Physical Defect Model Applied to PBTI in High-κ Stacks";
  Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), XT-11.1 - XT-11.6.
  
  
• [CP-39] T. Grasser, M. Waltl, K. Puschkarsky, B. Stampfer, G. Rzepa, G. Pobegen, H. Reisinger, H. Arimura, B. Kaczer:
  "Implications of Gate-Sided Hydrogen Release for Post-Stress Degradation Build-Up after BTI Stress";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), 6A-2.1 - 6A-2.6.
  
  
• [CP-38] A. Chasin, J. Franco, B. Kaczer, V. Putcha, P. Weckx, R. Ritzenthaler, H. Mertens, N. Horiguchi, D. Linten, G. Rzepa:
  "BTI Reliability and Time-Dependent Variability of Stacked Gate-All-Around Si Nanowire Transistors";
  Poster: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), 5C-4.1 - 5C-4.7.
  
  
• [CP-37] B. Kaczer, G. Rzepa, J. Franco, P. Weckx, A. Chasin, V. Putcha, E. Bury, M. Simicic, Ph. J. Roussel, G. Hellings, A. Veloso, P. Matagne, T. Grasser, D. Linten:
  "Benchmarking Time-Dependent Variability of Junctionless Nanowire FETs";
  Talk: IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "Proceedings of IRPS 2017", (2017), 2D-6.1 - 2D-6.7.
  
  
• [CP-36] Yu. Illarionov, M. Waltl, M. Jech, J. Kim, D. Akinwande, T. Grasser:
  "Reliability of Black Phosphorus Field-Effect Transistors with Respect to Bias-Temperature and Hot-Carrier Stress";
  Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 02.04.2017 - 06.04.2017; in "2017 IEEE International Reliability Physics Symposium (IRPS)", (2017), 6A-6.1 - 6A-6.6 doi:10.1109/IRPS.2017.7936338.
  
  
• [CP-35] S. Selberherr, T. Windbacher, A. Makarov, V. Sverdlov:
  "Exploiting Spin-Transfer Torque for Non-Volatile Computing";
  Talk: World Congress of Smart Materials (WCSM), Bangkok; (invited) 16.03.2017 - 18.03.2017; in "Book of Abstracts of BIT's 3^rd Annual World Congress of Smart Materials-2017", (2017), 130.
  
  
• [CP-34] V. Sverdlov, S. Selberherr:
  "Shot noise at spin-dependent hopping in tunnel junctions with ferromagnetic electrodes";
  Talk: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; in "Bulletin of the APS April Meeting 2017", (2017).
  
  
• [CP-33] N. Neophytou, M. Thesberg:
  "Electronic Transport Simulations in Nano-Crystalline Materials for Enhanced Thermoelectric Power Factors";
  Talk: APS March Meeting, New Orleans, USA; 13.03.2017 - 17.03.2017; (2017).
  
  
• [CP-32] F. Rudolf, A. Morhammer, K. Rupp, J. Weinbub:
  "VSC School Project: Performance Enhancements of Algebraic Multigrid Methods in ViennaCL";
  Talk: Austrian HPC Meeting (AHPC), Grundlsee; 01.03.2017 - 03.03.2017; in "Book of Abstracts of the 2017 Austrian HPC Meeting (AHPC)", (2017), 1.
  
  
• [CP-31] Yu. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
  "Accurate Mapping of Oxide Traps in Highly-Stable Black Phosphorus FETs";
  Talk: Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan; 28.02.2017 - 02.03.2017; in "2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)", (2017), 114 - 115 doi:10.1109/EDTM.2017.7947532.
  
  
• [CP-30] P. Manstetten, V. Simonka, G. Diamantopoulos, L. Gnam, A. Makarov, A. Hössinger, J. Weinbub:
  "Computational and Numerical Challenges in Semiconductor Process Simulation";
  Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 46.
  
  
• [CP-29] R. Mills, M. Adams, J. Brown, M. Fabien, T. Isaac, M. Knepley, K. Rupp, B. Smith, H. Zhang:
  "Experiences, Optimizations, and Future Directions with Petsc on the 2nd Generation ("Knights Landing") Intel Xeon Phi Processor";
  Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 370 - 371.
  
  
• [CP-28] P. Sanan, O. Schenk, M. Bollhoefer, K. Rupp, D. May:
  "Preconditioners for Stokes Flow with Highly Heterogeneous Viscosity Structure: Saddle-Point Smoothing Via Local Incomplete Factorization";
  Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 258.
  
  
• [CP-27] V. Sverdlov, J. Weinbub, S. Selberherr:
  "Modeling Spin-Dependent Phenomena for New Device Applications";
  Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; (invited) 27.02.2017 - 03.03.2017; in "CSE17 Abstracts", (2017), 45 - 46.
  
  
• [CP-26] K. Rupp:
  "Semiconductor Device Simulation Approaches for Massively Parallel Computing Architectures";
  Talk: SIAM Conference on Computational Science and Engineering, Atlanta, GA, USA; 27.02.2017 - 03.03.2017; (2017).
  
  
• [CP-25] S. Foster, D. Chakraborty, M. Thesberg, H. Kosina, N. Neophytou:
  "Monte Carlo Simulations for Extracting the Power Factor in 1D Systems";
  Talk: EPRSC Thermoelectric Network Meeting, Manchester, UK; 14.02.2017 - 15.02.2017; (2017).
  
  
• [CP-24] V. Simonka:
  "Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav";
  Talk: Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia; (invited) 26.01.2017 .
  
  
• [CP-23] P. Ellinghaus, M. Nedjalkov, J. Weinbub, S. Selberherr:
  "Wigner Modelling of Quantum Wires";
  Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), 2.
  
  
• [CP-22] V. Sverdlov, J. Ghosh, S. Selberherr:
  "Universal Dependence of the Spin Lifetime in Silicon Films on the Spin Injection Direction";
  Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), 7.
  
  
• [CP-21] T. Windbacher, B.G. Malm, V. Sverdlov, M. Östling, S. Selberherr:
  "Influence of the Free Layer Alignment on the Reliability of a Non-Volatile Magnetic Shift Register";
  Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 04.12.2016 - 09.12.2016; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2016), 43.
  
  
• [CP-20] G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
  "On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of IEDM 2016", (2016), 10.8.1 - 10.8.4.
  
  
• [CP-19] M. Karner, O. Baumgartner, Z. Stanojevic, F. Schanovsky, G. Strof, Ch. Kernstock, H. W. Karner, G. Rzepa, T. Grasser:
  "Vertically Stacked Nanowire MOSFETs for Sub-10nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations";
  Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 03.12.2016 - 07.12.2016; in "Proceedings of IEDM 2016", (2016), 30.7.1 - 30.7.4.
  
  
• [CP-18] M. Nedjalkov, J. Weinbub, S. Selberherr:
  "Modeling Carrier Transport in Nanoscale Semiconductor Devices";
  Talk: BIT's Annual World Congress of Nano Science & Technology, Singapore; (invited) 26.10.2016 - 28.10.2016; in "Abstracts of the BIT's 6^th Annual World Congress of Nano Science & Technology-2016", (2016), 377.
  
  
• [CP-17] M. Nedjalkov, J. Weinbub, P. Ellinghaus, S. Selberherr:
  "Wigner Signed Particles - An Intuitive Alternative of Particle-Wave Duality";
  Talk: SEMODAY Meeting, Florence, Italy; (invited) 16.10.2016 - 17.10.2016; (2016).
  
  
• [CP-16] B. Kaczer, S. Amoroso, R. Hussin, A. Asenov, J. Franco, P. Weckx, Ph. J. Roussel, G. Rzepa, T. Grasser, N. Horiguchi:
  "On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects";
  Talk: IEEE International Integrated Reliability Workshop (IIRW), Stanford Sierra Conference Center, S. Lake Tahoe, California, USA; 09.10.2016 - 13.10.2016; in "2016 IEEE International Integrated Reliability Workshop (IIRW)", (2016), 3.
  
  
• [CP-15] T. Windbacher, B. Ullmann, A. Grill, J. Weinbub:
  "Ihr Smartphone - ein Supercomputer vor 20 Jahren. Ein Einblick in die Mikro- und Nanoelektronik";
  Talk: European Researchers' Night: beSCIENCEd 2016, Wien; 30.09.2016.
  
  
• [CP-14] M. Nedjalkov, J. Weinbub, I. Dimov, S. Selberherr:
  "Signed Particle Interpretation for Wigner-Quantum Electron Evolution";
  Talk: National Congress of Physical Sciences, Sofia, Bulgaria; (invited) 29.09.2016 - 02.10.2016; in "Abstracts Third National Congress of Physical Sciences", (2016), 1.
  
  
• [CP-13] M. Thesberg, N. Neophytou, H. Kosina:
  "Calculating the Power Factor of Nano-Composite Materials from Fully Quantum-Mechanical Large-Scale Simulations";
  Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14^th European Conference on Thermoelectric", (2016).
  
  
• [CP-12] N. Neophytou, M. Thesberg, H. Kosina:
  "Examining the Effectiveness of Energy-Filtering in 1D vs. 2D Structures Using Quantum Mechanical Transport Simulations";
  Talk: European Conference on Thermoelectrics (ECT), Lisbon, Portugal; 20.09.2016 - 23.09.2016; in "Book of Abstracts 14^th European Conference on Thermoelectric", (2016).
  
  
• [CP-11] H. Kosina:
  "Semiconductor Device Modeling at the Nanoscale";
  Talk: 42^nd International Conference on Nano Engineering, MNE 201, Wien; (invited) 19.09.2016 - 23.09.2016; (2016).
  
  
• [CP-10] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "The Exploitation of Magnetization Orientation Encoded Spin-Transfer Torque for an Ultra Dense Non-Volatile Magnetic Shift Register";
  Talk: European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland; 12.09.2016 - 16.09.2016; in "Proceedings of the ESSDERC 46^th European Solid-State Device Research Conference", (2016), 311 - 314 doi:10.1109/ESSDERC.2016.7599648.
  
  
• [CP-9] T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov:
  "One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21^st International Conference on Simulation of Semiconductor Processes and Devices", (2016), 23 - 26 doi:10.1109/SISPAD.2016.7605139.
  
  
• [CP-8] P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
  "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21^st International Conference on Simulation of Semiconductor Processes and Devices", (2016), 265 - 268 doi:10.1109/SISPAD.2016.7605198.
  
  
• [CP-7] V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
  "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
  Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21^st International Conference on Simulation of Semiconductor Processes and Devices", (2016), 233 - 236 doi:10.1109/SISPAD.2016.7605190.
  
  
• [CP-6] V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
  "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
  Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nürnberg, Deutschland; 06.09.2016 - 08.09.2016; in "21^st International Conference on Simulation of Semiconductor Processes and Devices", (2016), 315 - 318 doi:10.1109/SISPAD.2016.7605210.
  
  
• [CP-5] T. Windbacher, H. Mahmoudi, A. Makarov, V. Sverdlov, S. Selberherr:
  "Logic-in-memory: A Non-Volatile Processing Environment for the Post CMOS Age";
  Talk: SISPAD Workshop, Nürnberg, Germany; 05.09.2016; in "21^st International Conference on Simulation of Semiconductor Processes and Devices".
  
  
• [CP-4] M. Nedjalkov, P. Ellinghaus, J. Weinbub, S. Selberherr, T. Sadi, A. Asenov, L. Wang, S. Amoroso, E. Towie:
  "Physical Models for Variation-Aware Device Simulation";
  Talk: Workshop on Variability-Aware Design Technology Co-Optimization, Nuremberg, Germany; (invited) 05.09.2016.
  
  
• [CP-3] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Layer Coupling and Read Disturbances in a Buffered Magnetic Logic Environment";
  Talk: Spintronics IX, San Diego, CA, USA; (invited) 28.08.2016 - 01.09.2016; in "Proceedings of SPIE", (2016), 12 doi:10.1117/12.2236151.
  
  
• [CP-2] A. Makarov, V. Sverdlov, T. Windbacher, S. Selberherr:
  "Silicon Spintronics";
  Talk: International Conference on Electronic Materials (ICEM), Singapur; (invited) 04.07.2016 - 08.07.2016; in "Proceedings of the ICEM 2016", (2016), 1.
  
  
• [CP-1] Yu. Illarionov, G. Rzepa, M. Waltl, H. Pandey, S. Kataria, V. Passi, M. Lemme, T. Grasser:
  "A Systematic Study of Charge Trapping in Single-Layer Double-Gated GFETs";
  Talk: Device Research Conference, Newark, Delaware, USA; 19.06.2016 - 22.06.2016; in "74^th Device Research Conference Digest", (2016), 89 - 90.
  
  

• [TH-1] M. Pourfath:
  "Modeling Nanoelectric Devices";
  TU Wien Fakultät für Elektrotechnik und Informationstechnik, (2016).
  
  

• [DT-6] S. Papaleo:
  "Mechanical Reliability of Open Through Silicon Via Structures for Integrated Circuits";
  Reviewer: H. Ceric, O. Thomas; E360, 2016, oral examination: 19.12.2016.
  
  
• [DT-5] R. Stradiotto:
  "Characterization of Electrically Active Defects at III-N/Dielectric Interfaces";
  Reviewer: T. Grasser, G. Meneghesso; E360, 2016, oral examination: 16.12.2016.
  
  
• [DT-4] M. Rovitto:
  "Electromigration Reliability Issue in Interconnects for Three-Dimensional Integration Technologies";
  Reviewer: H. Ceric, K. Weide-Zaage; E360, 2016, oral examination: 13.12.2016.
  
  
• [DT-3] F. Rudolf:
  "Symmetry- and Similarity-Aware Volumetric Meshing";
  Reviewer: S. Selberherr, H. Pottmann; E360, 2016, oral examination: 10.11.2016.
  
  
• [DT-2] Z. Stanojevic:
  "Physical Mobility Modeling for TCAD Device Simulation";
  Reviewer: H. Kosina, F. Gamiz; E360, 2016, oral examination: 26.09.2016.
  
  
• [DT-1] M. Waltl:
  "Characterization of Bias Temperature Instabilities in Modern Transistor Technologies";
  Reviewer: T. Grasser, D. Schmitt-Landsiedel; E360, 2016, oral examination: 09.09.2016.
  
  

• [MT-4] M. Bellini:
  "Ab Initio Study of Hexagonal Boron Nitride and Molybdenum Disulfide";
  Supervisor: T. Grasser, M. Jech, Y. Wimmer; E360, 2017, final examination: 09.03.2017.
  
  
• [MT-3] G. Mach:
  "A Highly Versatile Tool Chain for Robust Computational Fluid Dynamics Simulations";
  Supervisor: E. Langer, J. Weinbub; E384, 2017, final examination: 19.01.2017.
  
  
• [MT-2] K. Schnass:
  "Simulation of Ballistic Two-Dimensional Quantum Transport";
  Supervisor: H. Kosina, O. Baumgartner; E360, 2016, final examination: 18.11.2016.
  
  
• [MT-1] T. Knobloch:
  "Characterization and Physical Modeling of Degradation in MoS2 Transistors";
  Supervisor: T. Grasser, G. Rzepa; E360, 2016, final examination: 07.10.2016.
  
  

• [BT-4] C. Schleich:
  " Erweiterung des TDDS Temperaturreglers";
  Supervisor: T. Grasser, M. Waltl; Institut für Mikroelektronik, 2017.
  
  
• [BT-3] D. Koukola:
  " Using Instancing to Model Boundary Conditions for Direct Flux in 3D High Performance TCAD Simulations";
  Supervisor: E. Langer, J. Weinbub, P. Manstetten; Institut für Mikroelektronik, 2016.
  
  
• [BT-2] M. F. Glanz:
  " Parallelization Strategies for Particle Monte Carlo Simulations";
  Supervisor: E. Langer, J. Weinbub, P. Ellinghaus; Institut für Mikroelektronik, 2016.
  
  
• [BT-1] M. Ertl:
  " Parallelization Strategies for Particle Monte Carlo Simulations";
  Supervisor: E. Langer, F. Schanovsky; Institut für Mikroelektronik, 2016.