Books and Book Editorships
- [BK-5]
F. Gamiz, V. Sverdlov, C. Sampedro, L. Donet:
"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon EUROSOI-ULIS Book of Abstracts";
Universidad de Granada, (2018), ISBN: 978-1-5386-4810-0, 154 page(s).
- [BK-4]
J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino:
"Advanced CMOS-Compatible Semiconductor Devices 18";
ECS Transactions, The Electrochemical Society, Vol.85, No.5, (2018), ISBN: 978-1-62332-488-9, 230 page(s).
- [BK-3]
K. Matsumoto, B. Jonker, J. Weinbub, T. Machida, S. Selberherr, S.M. Goodnick:
"Innovative Nanoscale Devices and Systems";
Society for Micro- and Nanoelectronics, (2017), ISBN: 978-3-901578-31-1, 243 page(s).
- [BK-2]
L. Polok, M. Sosonkina, W.I. Thacker, J. Weinbub:
"High Performance Computing Symposium (HPC 2017)";
The Society for Modeling and Simulation International, (2017), ISBN: 978-1-5108-3822-2, 192 page(s).
- [BK-1]
J. Weinbub, D.K. Ferry, I. Knezevic, M. Nedjalkov, S. Selberherr:
"Book of Abstracts of the 2nd International Wigner Workshop (IW2)";
Institute for Microelectronics, TU Wien, (2017), ISBN: 978-3-200-05129-4, 51 page(s).
Papers in Journals
- [PJ-20]
V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub:
"Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide";
Journal of Applied Physics, 123 (2018), 235701-1 - 235701-7 doi:10.1063/1.5031185.
- [PJ-19]
A. Lahlalia, O. Le Neel, R. Shankar, S.-Y. Kam, L. Filipovic:
"Electro-Thermal Simulation & Characterization of a Microheater for SMO Gas Sensors";
Journal Of Microelectromechanical Systems, 27 (2018), 529 - 537 doi:10.1109/JMEMS.2018.2822942.
- [PJ-18]
S. E. Tyaginov, A. Makarov, M. Jech, M. I. Vexler, J. Franco, B. Kaczer, T. Grasser:
"Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures";
Semiconductors (Physics of Semiconductor Devices), 52 (2018), 242 - 247 doi:10.1134/S1063782618020203.
- [PJ-17]
G. Rzepa, J. Franco, B.J. O´Sullivan, A. Subirats, M. Simicic, G. Hellings, P. Weckx, M. Jech, T. Knobloch, M. Waltl, P. Roussel, D. Linten, B. Kaczer, T. Grasser:
"Comphy -- A Compact-Physics Framework for Unified Modeling of BTI";
Microelectronics Reliability, 85 (2018)(invited), 49 - 65 doi:10.1016/j.microrel.2018.04.002.
- [PJ-16]
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Materials Science Forum, 924 (2018), 192 - 195 doi:10.4028/www.scientific.net/MSF.924.192.
- [PJ-15]
M. Nedjalkov, P. Ellinghaus, J. Weinbub, T. Sadi, A. Asenov, I. Dimov, S. Selberherr:
"Stochastic Analysis of Surface Roughness Models in Quantum Wires";
Computer Physics Communications, 228 (2018), 30 - 37 doi:10.1016/j.cpc.2018.03.010.
- [PJ-14]
B. Kaczer, J. Franco, P. Weckx, Ph. J. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, T. Grasser:
"A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability";
Microelectronics Reliability, 81 (2018)(invited), 186 - 194 doi:10.1016/j.microrel.2017.11.022.
- [PJ-13]
J. Stathis, S. Mahapatra, T. Grasser:
"Controversial Issues in Negative Bias Temperature Instability";
Microelectronics Reliability, 81 (2018), 244 - 251 doi:10.1016/j.microrel.2017.12.035.
- [PJ-12]
A. Lahlalia, L. Filipovic, S. Selberherr:
"Modeling and Simulation of Novel Semiconducting Metal Oxide Gas Sensors for Wearable Devices";
IEEE Sensors Journal, 18 (2018), 1960 - 1970 doi:10.1109/JSEN.2018.2790001.
- [PJ-11]
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide";
IEEE Transactions on Electron Devices, 65 (2018), 674 - 679 doi:10.1109/TED.2017.2786086.
- [PJ-10]
P. Sharma, S. E. Tyaginov, S. E. Rauch, J. Franco, A. Makarov, M. I. Vexler, B. Kaczer, T. Grasser:
"Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion Approach";
IEEE Electron Device Letters, 38 (2017), 160 - 163 doi:10.1109/LED.2016.2645901.
- [PJ-9]
S. Foster, M. Thesberg, N. Neophytou:
"Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations";
Physical Review B, 96 (2017), 195425-1 - 195425-12 doi:10.1103/PhysRevB.96.195425.
- [PJ-8]
V. Sverdlov, J. Weinbub, S. Selberherr:
"Spintronics as a Non-Volatile Complement to Modern Microelectronics";
Informacije Midem - Journal of Microelectronics Electronic Components and Materials, 47 (2017)(invited), 195 - 210.
- [PJ-7]
G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
Materials Science Forum, 897 (2017), 143 - 146 doi:10.4028/www.scientific.net/MSF.897.143.
- [PJ-6]
B. Ullmann, T. Grasser:
"Transformation: Nanotechnology - Challenges in Transistor Design and Future Technologies";
E&I Elektrotechnik und Informationstechnik, 134 (2017), 349 - 354 doi:10.1007/s00502-017-0534-y.
- [PJ-5]
Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters, 38 (2017), 1763 - 1766 doi:10.1109/LED.2017.2768602.
- [PJ-4]
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation";
Journal of Physical Chemistry A, 121 (2017), 8791 - 8798 doi:10.1021/acs.jpca.7b08983.
- [PJ-3]
X. Song, F. Hui, T. Knobloch, B. Wang, Z. Fan, T. Grasser, X. Jing, Y. Shi, M. Lanza:
"Piezoelectricity in Two Dimensions: Graphene vs. Molybdenum Disulfide";
Applied Physics Letters, 111 (2017), 083107-1 - 083107-4 doi:10.1063/1.5000496.
- [PJ-2]
P. Ellinghaus, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Analysis of Lense-Governed Wigner Signed Particle Quantum Dynamics";
Physica Status Solidi - Rapid Research Letters, 11 (2017), 1700102-1 - 1700102-5 doi:10.1002/pssr.201700102.
- [PJ-1]
Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications, 1 (2017), 23-1 - 23-7 doi:10.1038/s41699-017-0025-3.
Contributions to Books
- [BC-10]
P. Manstetten, L. Gnam, A. Hössinger, S. Selberherr, J. Weinbub:
"Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme";
in: "Lecture Notes in Computer Science", Y. Shi, H. Fu, Y. Tian, V. Krzhizhanovskaya, M. Lees, J. Dongarra, P. Sloot (ed); Springer, 2018, ISBN: 978-3-319-93698-7, 694 - 707 doi:10.1007/978-3-319-93698-7_53.
- [BC-9]
J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 205 - 208 doi:10.1109/ULIS.2018.8354770.
- [BC-8]
V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 161 - 164 doi:10.1109/ULIS.2018.8354759.
- [BC-7]
J. Lorenz, A. Asenov, E. Baer, S. Barraud, C. Millar, M. Nedjalkov:
"Process Variability for Devices at and Beyond the 7nm Node";
in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed); ECS Transactions, 2018, ISBN: 978-1-62332-488-9, 113 - 124 doi:10.1149/08508.0151ecst.
- [BC-6]
C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
"Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 17 - 20 doi:10.1109/ULIS.2018.8354723.
- [BC-5]
V. Sverdlov, S. Selberherr:
"Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 33 - 36 doi:10.1109/ULIS.2018.8354727.
- [BC-4]
X. Klemenschits, S. Selberherr, L. Filipovic:
"Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries";
in: "Proceedings of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)", F. Gamiz, V. Sverdlov, C. Sampedro, L. Donetti (ed); IEEE Xplore, 2018, ISBN: 978-1-5386-4812-4, 177 - 180 doi:10.1109/ULIS.2018.8354763.
- [BC-3]
A. Makarov, V. Sverdlov, S. Selberherr:
"Ultra-Fast Switching of a Free Magnetic Layer with Out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed); ECS Transactions, 2018, ISBN: 978-1-62332-488-9, 213 - 218 doi:10.1149/08508.0213ecst.
- [BC-2]
L. Filipovic, A. Lahlalia:
"System-on-Chip Sensor Integration in Advanced CMOS Technology";
in: "Advanced CMOS-Compatible Semiconductor Devices 18, Vol. 85, No. 8", J. A. Martino, J.-P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B.-Y. Nguyen, A. Yoshino (ed); ECS Transactions, 2018, ISBN: 978-1-62332-488-9, 151 - 162 doi:10.1149/08508.0151ecst.
- [BC-1]
T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in: "ECS Transactions", D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed); ECS, 2017, ISBN: 978-1-62332-470-4, 203 - 217 doi:10.1149/08001.0203ecst.
Conference Presentations
- [CP-42]
A. Makarov, V. Sverdlov, S. Selberherr:
"Two-pulse sub-ns switching of a perpendicular spin-orbit torque MRAM cell without external magnetic field";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 51.
- [CP-41]
V. Sverdlov, S. Selberherr:
"Spin-dependent trap-assisted tunneling: A path towards a single spin switch";
Poster: Advanced Research Workshop on Future Trends in Microelectronics: Vingt Ans Après, Sardinia, Italy; 10.06.2018 - 16.06.2018; in "Abstracts Advanced Research Workshop Future Trends in Microelectronics: Vingt Ans Après", (2018), 49.
- [CP-40]
L. Gnam, P. Manstetten, S. Selberherr, J. Weinbub:
"Comparison of High-Performance Graph Coloring Algorithms";
Talk: Vienna Young Scientists Symposium (VSS), Vienna, Austria; 07.06.2018 - 08.06.2018; in "Proceedings of the Vienna Young Scientists Symposium", (2018), 30 - 31.
- [CP-39]
G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub:
"A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing";
Talk: European Seminar on Computing (ESCO), Pilsen, Czech Republic; 03.06.2018 - 08.06.2018; in "Proc. 6th European Seminar on Computin", (2018), 1.
- [CP-38]
Yu. Illarionov, B. Stampfer, F. Zhang, T. Knobloch, P. Wu, M. Waltl, A. Grill, J. Appenzeller, T. Grasser:
"Characterization of Single Defects: from Si to MoS2 FETs";
Poster: International Conference on Physics of 2D Crystals (ICP2C3), Valetta, Malta; 29.05.2018 - 02.06.2018; (2018).
- [CP-37]
A. Makarov, V. Sverdlov, S. Selberherr:
"Ultra-Fast Switching of a Free Magnetic Layer with out-of-Plane Magnetization in Spin-Orbit Torque MRAM Cells";
Talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; 13.05.2018 - 17.05.2018; in "Proceedings of the 233rd ECS Meeting (ECS)", (2018).
- [CP-36]
L. Filipovic, A. Lahlalia, S. Selberherr:
"System-on-Chip Sensor Integration in Advanced CMOS Technology";
Talk: 233rd ECS Meeting (ECS), Seattle, Washington, USA; (invited) 13.05.2018 - 17.05.2018; in "Proceedings of the 233rd ECS Meeting (ECS)", (2018).
- [CP-35]
L. Filipovic:
"CMOS-Compatible Semiconductor-Based Gas Sensors";
Talk: Emerging Technologies Communication Microsystems Optoelectronics Sensing (ETCMOS), Whistler, British Columbia, Canada; (invited) 09.05.2018 - 11.05.2018; in "Book of Abstracts of Emerging Technologies Communication Microsystems Optoelectronics Sensors", (2018).
- [CP-34]
V. Sverdlov, S. Selberherr:
"Current and Shot Noise at Spin-dependent Hopping in Magnetic Tunnel Junctions";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2018), 107 - 108.
- [CP-33]
C. Medina-Bailón, T. Sadi, M. Nedjalkov, J. Lee, S. Berrada, H. Carillo-Nunez, V. Georgiev, S. Selberherr, A. Asenov:
"Study of the 1D Scattering Mechanisms´ Impact on the Mobility in Si Nanowire Transistors";
Talk: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2018), 15 - 16.
- [CP-32]
X. Klemenschits, S. Selberherr, L. Filipovic:
"Unified Feature Scale Model for Etching in SF6 and Cl Plasma Chemistries";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2018), 65 - 66.
- [CP-31]
J. Ghosh, D. Osintsev, V. Sverdlov, S. Ganguly:
"Multilevel Parallelization Approach to Estimate Spin Lifetime in Silicon: Performance Analysis";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2018), 79 - 80.
- [CP-30]
V. Sverdlov, A. Makarov, S. Selberherr:
"Switching Current Reduction in Advanced Spin-Orbit Torque MRAM";
Poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada, Spain; 19.03.2018 - 21.03.2018; in "Book of Abstracts of the 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", (2018), 57 - 58.
- [CP-29]
Yu. Illarionov, A.J. Molina- Mendoza, M. Waltl, T. Knobloch, M. M. Furchi, T. Mueller, T. Grasser:
"Reliability of next-generation field-effect transistors with transition metal dichalcogenides";
Talk: IEEE International Reliability Physics Symposium (IRPS), Burlingame, CA, USA; 11.03.2018 - 15.03.2018; in "Proceedings of the 2018 IEEE International Reliability Physics Symposium (IRPS)", (2018), 6 doi:10.1109/IRPS.2018.8353605.
- [CP-28]
N. Neophytou, S. Foster, V. Vargiamidis, M. Thesberg:
"Electronic Transport Simulations in Materials with Embedded Nano-Inclusions for Enhanced Thermoelectric Power Factors";
Talk: Annual March Meeting of the American Physical Society, Los Angeles, USA; 05.03.2018 - 09.03.2018; (2018).
- [CP-27]
K. Rupp, F. Rudolf, J. Weinbub:
"Features of ViennaCL in PETSc";
Talk: Austrian HPC Meeting (AHPC), Linz; 19.02.2018 - 21.02.2018; in "Book of Abstracts of the 2018 Austrian HPC Meeting (AHPC)", (2018), 18.
- [CP-26]
S. Foster, M. Thesberg, V. Vargiamidis, N. Neophytou:
"Electronic Transport Simulations for Advanced Thermoelectric Materials";
Poster: Thermoelectric Network UK Meeting, Edinburgh, UK; 14.02.2018.
- [CP-25]
A. Makarov, S. E. Tyaginov, B. Kaczer, M. Jech, A. Chasin, A. Grill, G. Hellings, M. Vexler, D. Linten, T. Grasser:
"Hot-Carrier Degradation in FinFETs: Modeling, Peculiarities, and Impact of Device Topology";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 02.12.2017 - 06.12.2017; in "Proceedings of the 2017 International Electron Devices Meeting (IEDM) Technical Digest", (2017), 310 - 313 doi:10.1109/IEDM.2017.8268381.
- [CP-24]
J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs";
Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; (invited) 02.12.2017 - 06.12.2017; in "Proceedings of the 2017 International Electron Devices Meeting (IEDM)", (2017), 4.
- [CP-23]
V. Sverdlov, J. Weinbub, S. Selberherr:
"Current in Magnetic Tunnel Junctions at Spin-Dependent Hopping";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), 87 - 88.
- [CP-22]
V. Sverdlov, S. Selberherr:
"A Single-Spin Switch";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), 93 - 94.
- [CP-21]
M. Ballicchia, J. Weinbub, M. Nedjalkov, S. Selberherr:
"Classical and Quantum Electron Evolution with a Repulsive Dopant";
Talk: Workshop on Innovative Devices and Systems (WINDS), Kona, HI, USA; (invited) 26.11.2017 - 01.12.2017; in "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2017), 105 - 106.
- [CP-20]
V. Sverdlov, J. Weinbub, S. Selberherr:
"Spin-Based Non-Volatile Memory and Logic in Modern Nanoelectronics";
Talk: BIT's Annual World Congress of Nano Science & Technology, Fukuoka; (invited) 24.10.2017 - 26.10.2017; in "Abstracts of the BIT's 7th Annual World Congress of Nano Science & Technology-2017", (2017), 343.
- [CP-19]
V. Sverdlov, A. Makarov, J. Weinbub, S. Selberherr:
"Non-Volatility by Spin in Modern Nanoelectronics";
Talk: International Conference on Microelectronics (MIEL), Nis, Serbia; (invited) 09.10.2017 - 11.10.2017; in "Proceedings of the 30th International Conference on Microelectronics (MIEL 2017)", (2017), 7 - 14.
- [CP-18]
V. Sverdlov, J. Weinbub, S. Selberherr:
"Spintronics as a Non-Volatile Complement to Nanoelectronics";
Talk: International Conference on Microelectronics, Devices and Materials (MIDEM), Ljubljana, Slovenia; (invited) 04.10.2017 - 06.10.2017; in "Proceedings of the 53rd International Conference on Microelectronics, Devices and Materials (MIDEM 2017)", (2017), 10.
- [CP-17]
T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
Talk: Meeting of the Electrochemical Society (ECS), National Harbor, Maryland, USA; (invited) 01.10.2017 - 05.10.2017; in "Meeting Abstracts", (2017), 2.
- [CP-16]
S. Foster, M. Thesberg, N. Neophytou:
"Fully Quantum Mechanical Transport Simulations for the Calculation of the Thermoelectric Power Factor in Nanocomposite Materials";
Talk: European Conference on Thermoelectrics (ECT), Padova, Italy; 25.09.2017 - 27.09.2017; in "Book of Abstracts 15th European Conference on Thermoelectric", (2017).
- [CP-15]
C. Ostermaier, P. Lagger, M. Reiner, A. Grill, R. Stradiotto, G. Pobegen, T. Grasser, R. Pietschnig, D. Pogany:
"Review of bias-temperature instabilities at the III-N/dielectric interface";
Talk: European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Bordequx, Frankreich; 25.09.2017 - 28.09.2017; (2017).
- [CP-14]
Yu. Illarionov, M. Waltl, K. Smithe, E. Pop, T. Grasser:
"Encapsulated MoS2 FETs with Improved Performance and Reliability";
Talk: GRAPCHINA, Nanjing, China; 24.09.2017 - 26.09.2017; in "Proceedings of the GRAPCHINA 2017", (2017), 1.
- [CP-13]
L. Gnam, J. Weinbub, K. Rupp, F. Rudolf, S. Selberherr:
"Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation";
Talk: International Meshing Roundtable (IMR), Barcelona, Spanien; 18.09.2017 - 21.09.2017; in "Proceedings of the 26th International Meshing Roundtable (IMR26)", (2017), 5.
- [CP-12]
N. Neophytou, M. Thesberg:
"Electronic Transport Simulations in Nanostructured Materials for Large Thermoelectric Power Factors";
Talk: European Congress and Exhibition on Advanced Materials and Processes (EUROMAT), Thessaloniki, Greece; 18.09.2017 - 22.09.2017; (2017).
- [CP-11]
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide";
Poster: International Conference on Silicon Carbide and Related Materials (ICSCRM), Washington D.C., USA; 17.09.2017 - 22.09.2017; in "Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM)", (2017).
- [CP-10]
T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovsky, M. Jech, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"Physical Modeling of the Hysteresis in MoS2 Transistors";
Talk: European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium; 11.09.2017 - 14.09.2017; in "Proceedings of the ESSDERC 47th European Solid-State Device Research Conference", (2017), 284 - 287 doi:10.1109/ESSDERC.2017.8066647.
- [CP-9]
M. Kampl, H. Kosina, O. Baumgartner:
"Hot Carrier Study Including e-e Scattering Based on a Backward Monte Carlo Method";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the 22nd International Conference on Simulation of Semiconductor Processes and Devices", (2017), 293 - 296 doi:10.23919/SISPAD.2017.8085322.
- [CP-8]
L. Filipovic, R.L. de Orio, W. H. Zisser, S. Selberherr:
"Modeling Electromigration in Nanoscaled Copper Interconnects";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the 22nd International Conference on Simulation of Semiconductor Processes and Devices", (2017), 161 - 164 doi:10.23919/SISPAD.2017.8085289.
- [CP-7]
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the 22nd International Conference on Simulation of Semiconductor Processes and Devices", (2017), 125 - 128 doi:10.23919/SISPAD.2017.8085280.
- [CP-6]
P. Manstetten, A. Hössinger, J. Weinbub, S. Selberherr:
"Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan; 07.09.2017 - 09.09.2017; in "Proceedings of the 22nd International Conference on Simulation of Semiconductor Processes and Devices", (2017), 73 - 76 doi:10.23919/SISPAD.2017.8085267.
- [CP-5]
V. Sverdlov, H. Mahmoudi, T. Windbacher, A. Makarov, J. Weinbub, S. Selberherr:
"MTJs - Spin-Based Binary Memristors for Non-Volatile Memory and Logic Applications";
Talk: EMN Meeting on Memristive Switching & Network, Milan, Italy; (invited) 14.08.2017 - 18.08.2017; in "Proceedings of EMN Meeting on Memristive Switching & Network 2017", (2017), 33 - 34.
- [CP-4]
G. Meller, S. Selberherr:
"Simulation of Injection Currents into Disordered Molecular Conductors";
Poster: International Conference on Advanced Nano Materials (ANM), Aveiro, Portugal; 19.07.2017 - 21.07.2017; in "Proceedings of the 9thInternational Conference on Advanced Nano Materials (ANM)", (2017).
- [CP-3]
T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
"Analysis of a Spin-Transfer Torque Based Copy Operation of a Buffered Magnetic Processing Environment";
Talk: World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI), Orlando, Florida, USA; 08.07.2017 - 11.07.2017; in "Proceedings of the 21st World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI)", (2017), 142 - 146.
- [CP-2]
G. Diamantopoulos, J. Weinbub, A. Hössinger, S. Selberherr:
"Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems";
Talk: International Conference on Computational Science and Its Applications (ICCSA), Trieste, Italy; 03.07.2017 - 06.07.2017; in "Proceedings of the 2017 17th International Conference on Computational Science and Its Applications (ICCSA", (2017), 1 - 8 doi:10.1109/ICCSA.2017.7999648.
- [CP-1]
V. Sverdlov, J. Weinbub, S. Selberherr:
"Enhanced Shot Noise as a Signature of Trap-Assisted Tunneling in Magnetic Tunnel Junctions: a Monte Carlo Approach";
Talk: 25th International Symposium on Nanostructures: Physics and Technology, Sankt Petersburg, Russland; 26.06.2017 - 30.06.2017; in "Proceedings of the 25th International Symposium on Nanostructures: Physics and Technology", (2017), 132 - 133.
Doctoral Theses
- [DT-5]
P. Manstetten:
"Efficient flux calculations for topography simulation";
Supervisor: S. Selberherr, J.Weinbub; Reviewer: H. Köstler, M. Wimmer; E360, 2018, oral examination: 27.06.2018.
- [DT-4]
B. Ullmann:
"Mixed Negative Bias Temperature Instability and Hot-Carrier Stress";
Supervisor: T. Grasser, M.Waltl; Reviewer: J. Schmitz, S. Reggiani; E360, 2018, oral examination: 27.06.2018.
- [DT-3]
G. Rott:
"Negative bias temperature instability and hot-carrier degradation of 130nm technology transistors including recovery effects";
Supervisor: T. Grasser; Reviewer: J. Schmitz, S. Reggiani; E360, 2018, oral examination: 27.06.2018.
- [DT-2]
G. Rzepa:
"HEfficient Physical Modeling of Bias Temperature Instability";
Supervisor: T. Grasser, M. Waltl; Reviewer: F. Crupi, L. Lacher; E360, 2018, oral examination: 26.06.2018.
- [DT-1]
Y. Wimmer:
"Hydrogen Related Defects in Amorphous SiO2 and the Negative Bias Temperature Instability";
Supervisor: T. Grasser; Reviewer: M. Watkins, P. Mohn; E360, 2017, oral examination: 27.11.2017.
Master's Theses
Bachelor's Theses