4.5.1 UMOSFET

The first SiC power transistors were vertical trench U-shape metal-oxide-semiconductor field-effect-transistors (UMOSFETs) reported by Cree Inc. in 1992 [51]. The technology for the fabrication of this structure was derived from the trench etching techniques developed for the storage capacitor in silicon memories. In this section simulation-based analysis of this type of transistor geometry is performed. Repetitive calibration steps have been carried out to determine the exact value of the model parameters which give the desired forward and reverse biased characteristics.
T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation