To test the hypothesis from Section 5.2.3 the density gradient quantum correction model as well as the random discrete dopant algorithm detailed in Section 5.1.1 have been employed. As a proof of concept a n-channel MOSFET in inversion has been simulated using ViennaSHE [65] (cf. Figure 5.16).
| Figure 5.16: | A 25nm n-channel MOSFET simulated using SHE, density gradient and random discrete doping in inversion. The MOSFET featured a channel doping of ND = 5 × 1018cm-3 and an effective oxide thickness of 1nm. The potential fluctuations are clearly visible. |