In order to demonstrate the abilities of the implemented algorithms, several typical ferroelectric structures are analyzed with the device simulator MINIMOS-NT. Special care is taken of outlining possible applications of the tool for device and circuit design.
Section 8.1 concentrates on the general two-dimensional algorithm for isotropic materials. It is shown that with the simulation results equivalent parameters for a compact model can be extracted.
Section 8.2 deals with the influence of anisotropy, the inclusion of which gets mandatory if the thickness of the device gets into the range of the grain size.
Section 8.3 deals with the maybe most promising ferroelectric device, the FEMFET which is, from the viewpoint of device simulation, definitely the most complex ferroelectric device.