BJT | ... | Bipolar junction transistor |
BTI | ... | Bias temperature instability |
CETD | ... | Critical electron trap density |
CHE | ... | Channel hot electron |
CMOS | ... | Complementary MOS |
CV | ... | Capacitance-voltage |
DAHC | ... | Drain avalanche hot carrier |
DCIV | ... | Direct current current voltage |
DOS | ... | Density of states |
DRAM | ... | Dynamic random access memory |
DUT | ... | Device under test |
ESD | ... | Electrostatic discharge |
ESR | ... | Electron spin resonance |
GPV | ... | Gate pulsed voltage |
HBM | ... | Human body model |
IV | ... | Current-voltage |
MOS | ... | Metal-oxide-semiconductor |
MOSFET | ... | MOS field-effect transistor |
NBT | ... | Negative bias temperature |
NBTI | ... | Negative bias temperature instability |
nMOSFET | ... | n-channel MOSFET |
pMOSFET | ... | p-channel MOSFET |
SDR | ... | Spin dependent recombination |
SGHE | ... | Secondary generated hot electron |
SHE | ... | Substrate hot electron |
SILC | ... | Stress-induced leakage current |
SNM | ... | Static noise margin |
SRAM | ... | Static random access memory |
SRH | ... | Shockley-Read-Hall |
TAT | ... | Trap assisted tunneling |
TCAD | ... | Technology computer-aided design |
TDDB | ... | Time dependent dielectric breakdown |
VTC | ... | Voltage transfer characteristic |
VLSI | ... | Very large scale integration |