Contents

• 1. Introduction
• 2. Simulation of Semiconductor Devices
  • 2.1 Classical Semiconductor Device Equations
    • 2.1.1 Maxwell's Equations
    • 2.1.2 Poisson's Equation
    • 2.1.3 Continuity Equations
    • 2.1.4 Current Relations
    • 2.1.5 The Semiconductor Equations
  • 2.2 Analytic MOSFET Approximations
    • 2.2.1 Interface and Oxide Charges
    • 2.2.2 The Basic Models
    • 2.2.3 NBTI Related Models
  • 2.3 Carrier Generation and Recombination
    • 2.3.1 Photon Transition
    • 2.3.2 Phonon Transition
    • 2.3.3 Auger Generation/Recombination
    • 2.3.4 Impact Ionization
  • 2.4 Quantum Mechanical Effects
    • 2.4.1 Quantum Confinement
  
  
• 3. The Silicon/Silicon-Dioxide Interface
  • 3.1 Silicon Dangling Bonds
    • 3.1.1 Amphoteric Nature of Dangling Bonds
    • 3.1.2 Characterization of Trap Centers
    • 3.1.3 Effects of Trap Centers
  • 3.2 Centers
  
  
• 4. Characterization of Interfaces
  • 4.1 Charge Pumping Method
    • 4.1.1 Experimental Setup
    • 4.1.2 Charge Pumping Current Model
    • 4.1.3 Numerical Simulation
  • 4.2 DCIV Method
  • 4.3 Capacitance-Voltage Characteristics
  
  
• 5. Dielectric Degradation and Failure Mechanisms
  • 5.1 Hot Carrier Degradation
    • 5.1.1 Channel Hot-Electron Injection
    • 5.1.2 Drain Avalanche Hot-Carrier Injection
    • 5.1.3 Secondarily Generated Hot-Electron Injection
    • 5.1.4 Substrate Hot-Electron/Hole Injection
  • 5.2 Dielectric Wearout and Breakdown
    • 5.2.1 Measurement of Breakdown
    • 5.2.2 Models
  • 5.3 Quantum Mechanical Tunneling
    • 5.3.1 Direct Tunneling
    • 5.3.2 Trap-Assisted Tunneling
    • 5.3.3 Evaluation of the New Model
  
  
• 6. Negative Bias Temperature Instability
  • 6.1 First Report of NBTI
  • 6.2 The NBTI Time Exponent
  • 6.3 Physical Mechanisms of NBTI
    • 6.3.1 Basic Experimental Set-Up
    • 6.3.2 Faster Determination of the Threshold Voltage
    • 6.3.3 Drain Pulsed Voltage
    • 6.3.4 Gate Pulsed Voltage
    • 6.3.5 Observation of Terminal Currents
    • 6.3.6 Importance of Initial Degradation
    • 6.3.7 pMOSFET vs. nMOSFET
    • 6.3.8 Influence of Channel Carrier Transport
  • 6.4 Reaction-Diffusion Model
    • 6.4.1 Properties of the R-D Model
    • 6.4.2 R-D Model vs. Fast Recovery
    • 6.4.3 Dispersive Transport
    • 6.4.4 Coupling to the Semiconductor Device Equations
  • 6.5 Tsetseris' Model
  • 6.6 The New Model for Numerical Simulation of NBTI
    • 6.6.1 Interface Degradation
    • 6.6.2 Drift-Diffusion
    • 6.6.3 Trapping
  
  
• 7. Case Studies
  • 7.1 Power MOS Devices
    • 7.1.1 LDMOSFET
    • 7.1.2 Parameter Extraction
    • 7.1.3 Measurements and Simulation Results
  • 7.2 CMOS Inverter
    • 7.2.1 Voltage Transfer Characteristics
    • 7.2.2 Steady State Degradation
    • 7.2.3 Transient Behavior
  • 7.3 6T SRAM Cell
    • 7.3.1 Static Noise Margin
    • 7.3.2 Steady State Degradation
  • 7.4 Ring Oscillator
    • 7.4.1 Frequency Degradation
    • 7.4.2 Transient Degradation
  
  
• 8. Summary and Conclusions
• Bibliography