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2. Simulation of Semiconductor Devices
OPTIMIZATION of a semiconductor
manufacturing process can be a cumbersome task. It is often based on trial and
error steps where different processing parameters such as the exact doping
profile, geometries, and temperatures are evaluated. Since the possible
combinations are literally unlimited, it is very important to have highly
skilled device engineers working on this task. But still, as every new
experiment takes up to weeks until the results are obtained and the expenses
for fabrication are very high, alternatives or at least assistance in device
development is of crucial importance. This is where semiconductor device
simulation comes into play. Not only can different geometries and doping
profiles be analyzed within hours, simulation also gives detailed insight into
the device behavior.
Measurement data mainly concentrate on electrical characterization of the
extrinsic data, semiconductor devices can deliver. These can be the
voltage-current relations, the capacitance-voltage curves, or similar. Using
simulation tools, also distributed quantities inside the semiconductor can be
explored. This can be for example the carrier concentration, the electrostatic
potential, the carrier temperature, or the current density. By using these
software tools, the device engineer can gain additional information about how
processing changes can alter the intrinsic properties of the semiconductor
device.
Subsections
Next: 2.1 Classical Semiconductor Device
Up: Dissertation Robert Entner
Previous: 1. Introduction
R. Entner: Modeling and Simulation of Negative Bias Temperature Instability