Phys { +GateOxide { oxideTrap = "Pure"; OxideTrap { Pure { Nt = 1e19 "cm^-3"; // trap concentration type = "negative"; // charge state occupancy = 0.001; // trap occupancy energy = 2 "eV"; // trap energy level } } } +Gate { Contact { Ohmic { Ew = -0.5 eV; }} } }A charge state of
Symbol | Keyword | Type | Unit |
![]() |
Nt | Quantity | cm![]() |
![]() |
occupancy | Real | |
![]() |
energy | Quantity | eV |
Keyword | Type | Values |
type | String | "negative", "neutral", "positive" |
A. Gehring: Simulation of Tunneling in Semiconductor Devices