D. User Interface

This chapter describes the user interface for the tunneling models implemented in MINIMOS-NT. Several models can be chosen: The FOWLER-NORDHEIM model, the SCHUEGRAF model, the FRENKEL-POOLE model, and the TSU-ESAKI model with different methods to calculate the transmission coefficient. Additionally, a trap-assisted tunneling model accounting for inelastic tunneling of electrons via traps is available.

Tunneling is allowed for all dielectric - semiconductor or dielectric - ideal conductor interfaces. The keyword tunnel must be given in the Phys section to specify the dielectric segment where the tunneling model should be evaluated. Since the tunneling current is always evaluated between two boundaries, these boundaries have to be stated in the tunnel keyword. If the two boundaries considered for tunneling are the nearest non-touching two boundaries of the respective segment, the function addNearestInterfaces() can be used. This function returns the two boundaries of the segment that are nearest but do not touch each other.

Subsections

• D.1 Direct Tunneling
  • D.1.1 The Model FNPure
  • D.1.2 The Model FNLenzlingerSnow
  • D.1.3 The Model DTSchuegraf
  • D.1.4 The Model FrenkelPoole
  • D.1.5 The Model TsuEsaki
  
  
• D.2 Stacked Segments
• D.3 Oxide Traps
• D.4 Trap-Assisted Tunneling

A. Gehring: Simulation of Tunneling in Semiconductor Devices