For the calculation of the transmission coefficient it is necessary to take
the shape of the energy barrier into account. Electrons tunnel from a
semiconductor or metal segment through a dielectric layer to another
semiconductor or metal segment. Thus, the band diagram of a
metal-oxide-semiconductor (MOS) capacitor has to be investigated. Furthermore,
the image force, which leads to a reduction of both the electron and hole
energy barrier for thin dielectrics, will be described in this section.